NEC UPA1572B

DATA SHEET
Compound Field Effect Power Transistor
µPA1572B
N-CHANNEL POWER MOS FET ARRAY
SWITCHING
INDUSTRIAL USE
DESCRIPTION
PACKAGE DIMENSIONS
in millimeters
The µPA1572B is N-channel Power MOS FET Array
that built in 4 circuits designed for solenoid, motor and
lamp driver.
4.0
26.8 MAX.
2.5
• Full Mold Package with 4 Circuits
• 4 V driving is possible
10 MIN.
10
FEATURES
• Low On-state Resistance
RDS(on) = 0.6 Ω MAX. (VGS = 10 V, ID = 1 A)
1.4
Package
µPA1572BH
10Pin SIP
0.6±0.1
1 2 3 4 5 6 7 8 910
ORDERING INFORMATION
Type Number
1.4
0.5±0.1
2.54
RDS(on) = 0.8 Ω MAX. (VGS = 4 V, ID = 1 A)
• Low Input Capacitance Ciss = 110 pF TYP.
CONNECTION DIAGRAM
3
2
5
4
7
9
6
8
1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
V
V
10
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
Drain to Source Voltage (VGS = 0)
Gate to Source Voltage (VDS = 0)
VDSS
VGSS (AC)
60
±20
Drain Current (DC)
Drain Current (pulse)
ID (DS)
ID (pulse) *1
±2.0 A/unit
±6.0 A/unit
Total Power Dissipation
Total Power Dissipation
PT1 *2
PT2 *3
20
3.0
Channel Temperature
Storage Tempreature
TCH
Tstg
Single Avalanche Current
Single Avalanche Energy
IAS *4
EAS *4
*1 PW ≤ 10 µs, Duty Cycle ≤ 1 %
*2 4 Circuits TC = 25 °C
*3 4 Circuits TA = 25 °C
*4 Starting TCH = 25 °C, VDD = 30 V, VGS = 20 V → 0, RG = 25 Ω, L = 100 µH
1, 10
: Source
W
W
150 °C
−55 to +150°C
5.0
0.1
A
mJ
Build-in Gate Diodes are for protection from static electricity in handing.
In case high voltage over VGSs is applied, please append gate protection circuits.
The information in this document is subject to change without notice.
Document No. G11177EJ1V0DS00 (1st edition)
Date Published May 1996 P
Printed in Japan
©
1996
µPA1572B
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
MAX.
UNIT
Drain Leakage Current
CHARACTERISTIC
IDSS
10
µA
VDS = 60 V, VGS = 0
Gate Leakage Current
IGSS
±10
µA
VGS = ±20 V, VDS = 0
2.0
V
VDS = 10 V, ID = 1.0 mA
Gate Cutoff Voltage
Forward Transfer Admittance
MIN.
VGS (off)
1.0
Yfs
0.5
TYP.
TEST CONDITION
S
VDS = 10 V, ID = 1.0 A
Drain to Source ON-Resistance
RDS (on)1
0.3
0.6
Ω
VGS = 10 V, ID = 1.0 A
Drain to Sourse ON-Resistance
RDS (on)2
0.4
0.8
Ω
VGS = 4.0 V, ID = 1.0 A
Input Capacitance
Ciss
110
pF
VDS = 10 V, VGS = 0, f = 1.0 MHz
Output Capacitance
Coss
70
pF
Reverse Transfer Capacitance
Crss
25
pF
Turn-on Delay Time
td (on)
30
ns
Rise Time
ID = 1.0 A, VGS (on) = 10 V, VDD = 30 V, RL = 30 Ω
tr
200
ns
td (off)
100
ns
tf
160
ns
Total Gate Charge
QG
5.4
nC
Gate to Source Charge
QGS
0.7
nC
Gate to Drain Charge
QGD
2.0
nC
VF (S-D)
1.0
V
IF = 2.0 A, VGS = 0
Reverse Recovery Time
trr
130
ns
IF = 2.0 A, VGS = 0, di/dt = 50 A/µs
Reverse Recovery Charge
Qrr
110
nC
Turn-off Delay Time
Fall Time
Body Diode Forward Voltage
2
SYMBOL
VGS = 10 V, ID = 2.0 A, VDD = 48 V
µPA1572B
Test Circuit 1 Avalanche Capability
D.U.T.
RG = 25 Ω
PG.
L
50 Ω
VGS = 20 V → 0
VDD
BVDSS
IAS
VDS
ID
VDD
Starting TCH
Test Circuit 2 Switching Time
D.U.T.
RL
VGS
VGS
RG
RG = 10 Ω
PG.
Wave From
VDD
VGS (on)
10 %
90 %
0
ID
10 %
td (on)
tr
ton
t
90 %
90 %
ID
ID
Wave From
VGS
0
0
10 %
td (off)
tr
toff
t = 1 µs
Duty Cycle ≤ 1 %
Test Circuit 3 Gate Charge
D.U.T.
IG = 2 mA
PG.
50 Ω
RL
VDD
3
µPA1572B
CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.5
4 Circuits operation
2.0
3 Circuits operation
,,
2 Circuits operation
1 Circuit operation
1.5
1.0
NEC
µ PA1572BH Lead
0.5
0
Print
Circuit
Boad
50
100
30
4 Circuits operation
20
2 Circuits operation
150
0
d(
0
=1
100
150
S
G
im
)L
1.0
on
(
DS
R
ID(Pulse)
ID(DC)
0.
1
0. ms
5m
10
m
s 1m s
s
50
m
s
DC
0.1
TC = 25 °C
Single Pulse
0.01
0.1
1.0
10
100
80
60
40
20
100
0
VDS - Drain to Source Voltage - V
ID - Drain Current - A
10
TA=125 °C
75 °C
25 °C
-25 °C
0.1
VGS- Gate to Source Voltage - V
60
80
100 120 140 160
8
Pulsed
VDS=10V
4
40
TC - Case Temperature - °C
100
2
20
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
50
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
V
4
1 Circuit operation
10
FORWARD BIAS SAFE OPERATING AREA
ite
0
3 Circuits operation
TC - Case Temperature - °C
V)
1.0
Under Same
dissipation in
each circuit
Tc is grease
Temperature
on back surface
TA - Ambient Temperature - °C
10
ID - Drain Current - A
PT - Total Power Dissipation - W
Under Same
dissipation in
each circuit
3.0
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
3.5
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
6
Pulsed
6
VGS=20V
10V
4
VGS=4V
2
0
1
2
VDS - Drain to Source Voltage - V
3
µPA1572B
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
10 000
1 000
Rth (CH-A) 4Circuits
3Circuits
2Circuits
1Circuit
100
10
1.0
For Each Circuit,
Single Pulse
0.1
100 µ
1m
10 m
100 m
1
10
100
1 000
10
VDS=10V
Pulsed
TA=-25°C
25°C
75°C
125°C
1.0
0.1
0.01
0.1
1.0
10
RDS(on) - Drain to Source On-State Resistance - Ω
ID- Drain Current - A
2.0
Pulsed
1.0
VGS=4V
VGS=10V
0
0.1
1.0
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.5
Pulsed
I D= 2 A
1A
0.4 A
1.0
0.5
0
10
20
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
10
VGS(off) - Gate to Source Cutoff Voltage - V
 yfs  - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-State Resistance - Ω
PW - Pulse Width - s
VDS = 10 V
ID = 1 mA
2
1
0
− 50
0
50
100
150
TCH - Channel Temperature - °C
5
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.8
0.6
VGS=4V
0.4
VGS=10V
0.2
Pulsed
VGS=2V
1.0
VGS=0
0.1
ID = 1A
0
100
50
0
150
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Ciss
Coss
Crss
10
1.0
0.1
1
10
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS
1 000
VGS = 0
f = 1 MHz
100
td(off)
tr
1.0
0.1
1.0
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
80
VDS - Drain to Source Voltage - V
trr - Reverse Recovery time - ns
VDD =30V
VGS =10V
RG =10 Ω
ID - Drain Current - A
di/dt =50A/ µ s
VGS = 0
ID=2A
14
12
60
VDD=12V
30V
48V
VGS
10
8
40
6
4
20
2
VDS
0
1.0
ID - Drain Current - A
6
td(on)
10
100
100
10
0.1
tf
100
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1 000
1.5
1.0
VSD - Source to Drain Voltage - V
TCH - Channel Temperature -°C
1 000
0.5
10
0
2
4
6
QG - Gate Charge - nC
8
VGS - Gate to Source Voltage - V
0
− 50
10
ISD - Diode Forward Current - A
RDS(on) - Drain to Source On-State Resistance - Ω
µPA1572B
µPA1572B
SINGLE AVALANCHE ENERGY
DERATING FACTOR
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
1.0
Energy Derating Factor - %
IAS - Single Avalanche Current - A
10
IAS=1A
EAS
=0.
1m
J
0.1
0.1
VDD = 30 V
VGS = 20 V → 0
RG = 25Ω
Starting TCH=25°C
10 µ
100µ
1m
10 m
L - Inductive Load - H
VDD = 30 V
RG = 25 Ω
VGS = 20 V → 0
IAS ≤ 1.0A
80
60
40
20
0
25
50
75
100
125
150
Starting TCH - Starting Channel Temperature - °C
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Semiconductor device package manual
C10943X
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
Power MOS FET features and application switching power supply
TEA-1034
Application circuits using Power MOS FET
TEA-1035
Safe operating area of Power MOS FET
TEA-1037
7
µPA1572B
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this document.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
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"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard : Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific : Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5