DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2353/2SK2354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis- PACKAGE DIMENSIONS tor designed for high voltage switching applications. (in millimeters) 4.5 ±0.2 10.0 ±0.3. FEATURES 3.2 ±0.2 2.7 ±0.2 • Low On-Resistance QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended 0.7 ±0.1 13.5 MIN. 4 ±0.2 3 ±0.1 15.0 ±0.3 2SK2354: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 670 pF TYP. • High Avalanche Capability Ratings • Isolate TO-220 Package 12.0 ±0.2 2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 1.3 ±0.2 2.5 ±0.1 1.5 ±0.2 2.54 2.54 0.65 ±0.1 applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2353/2354) VDSS 450/500 V VGSS ±30 V Drain Current (DC) ID(DC) ±4.5 A Drain Current (pulse)* ID(pulse) ±18 A Total Power Dissipation (Tc = 25 ˚C) PT1 30 W Total Power Dissipation (Ta = 25 ˚C) PT2 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg Single Avalanche Current** IAS 4.5 A Single Avalanche Energy** EAS 17.4 mJ Gate to Source Voltage * 1 2 3 1. Gate 2. Drain 3. Source MP-45F (ISOLATED TO-220) Drain Body Diode –55 to +150 ˚C Gate PW ≤ 10 µs, Duty Cycle ≤ 1 % Source ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 The information in this document is subject to change without notice. Document No. TC-2499 (O. D. No. TC-8047) Date Published November 1994 P Printed in Japan © 1994 2SK2353/2SK2354 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL Drain to Source On-Resistance MIN. TYP. RDS(on) Gate to Source Cutoff Voltage VGS(off) 2.5 Forward Transfer Admittance | yfs | 1.0 MAX. UNIT 1.0 1.4 Ω 1.1 1.5 TEST CONDITIONS VGS = 10 V 2SK2353 ID = 2.5 A 2SK2354 3.5 V VDS = 10 V, ID = 1 mA S VDS = 10 V, ID = 2.5 A VDS = VDSS, VGS = 0 Drain Leakage Current IDSS 100 µA Gate to Source Leakage Current IGSS ±100 nA VGS = ±30 V, VDS = 0 Input Capacitance Ciss 670 pF VDS = 10 V Output Capacitance Coss 140 pF VGS = 0 Reverse Transfer Capacitance Crss 18 pF f = 1 MHz Turn-On Delay Time td(on) 11 ns ID = 2.5 A Rise Time tr 8 ns VGS(on) = 10 V Turn-Off Delay Time td(off) 40 ns VDD = 150 V Fall Time tf 8 ns RG = 10 Ω RL = 60 Ω Total Gate Charge QG 20 nC ID = 4.5 A Gate to Source Charge QGS 4.5 nC VDD = 400 V Gate to Drain Charge QGD 9 nC VGS = 10 V Body Diode Forward Voltage VF(S-D) 1.0 V Reverse Recovery Time trr 270 ns IF = 4.5 A, VGS = 0 Reverse Recovery Charge Qrr 1.0 nC di/dt = 50 A/µs Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time D.U.T. D.U.T. L RG = 25 Ω PG VGS = 20 - 0 V IF = 4.5 A, VGS = 0 RL VGS 50 Ω PG. VDD RG RG = 10 Ω VDD Wave Form VGS VGS 0 IAS VDS ID ID Wave Form t 90 % 90 % ID BVDSS VGS (on) 10 % 0 90 % ID 10 % 0 10 % td (on) tr td (off) tf VDD Starting Tch t = 1 µs Duty Cycle ≤ 1 % ton toff Test Circuit 3 Gate Charge PG. D.U.T. IG = 2 mA RL 50 Ω VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2353/2SK2354 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 50 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 20 40 80 60 100 120 140 160 40 30 20 10 0 20 40 60 80 100 120 140 Tc - Case Temperature - ˚C Tc - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 160 100 Po 0 1m 10 w 1.0 er Di 0 n 1 µs s s 2SK2354 m 2SK2353 m s ipa tio 0.1 10 s 10 ss Tc = 25 ˚C Single Pulse = 10 ID - Drain Current - A 10 ID (pulse) PW µ ID - Drain Current - A Pulsed 10 d ite V) m i 0 1 )L (on = S S RD t V G (a ID (DC) 10 V VGS = 20 V 8 8V 6 4 VGS = 6 V 2 Lim ite d 10 100 1000 VDS - Drain to Source Voltage - V 0 4 8 12 16 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE ID - Drain Current - A 50 Pulsed 10 1 Ta = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 0.1 0.05 0 5 10 15 VGS - Gate to Source Voltage - V 3 2SK2353/2SK2354 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-c) (t) - Transient Thermal Resistance - ˚C/W 1 000 100 Rth(ch-c) = 62.5 ˚C/W 10 Rth(ch-c) = 4.17 ˚C/W 1 0.1 0.01 Tc = 25 ˚C Single Pulse 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 IyfsI - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 10 VDS = 10 V Pulsed Ta = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 1.0 0.1 1.0 100 10 RDS(on) - Drain to Source On-State Resistance - Ω PW - Pulse Width - s DRAIM TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 20 ID = 5 A ID = 2.5 A ID = 1 A 10 0 10 Pulsed 2.0 1.0 0 0.1 1 ID - Drain Current - A 4 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESITANCE vs. DRAIN CURRENT 10 VGS(off) - Gate to Source Cutoff Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω ID - Drain Current - A 3.0 30 20 VGS - Gate to Source Voltage - V VDS = 10 V ID = 1 mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 Tch - Channel Temperature - ˚C 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 4.0 50 ID = 4 A ID = 2 A 2.0 1.0 VGS = 10 V 0 –50 0 50 100 10 0.1 0.5 0 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss Coss 100 Crss 10 5 1 10 100 500 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS VGS = 0 f = 1.0 MHz 1 000 tr tf 100 td(off) td(on) 10 VDD = 100 V VGS = 10 V RG = 25 Ω 1.0 0.5 1000 0.1 1.0 10 ID - Drain Current - A VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 500 400 di/dt = 50 A/ns VGS = 0 400 300 200 100 16 ID = 4.5 A VDS - Drain to Source Voltage - V trr - Reverse Recovery Diode - ns 1.5 1.0 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C 5 000 VGS = 0 10 V 1.0 0.05 150 Pulsed 14 VDD = 400 V 250 V 125 V 300 VGS 12 10 200 8 6 100 4 2 VDS VGS - Gate to Source Voltage - V 3.0 ISD - Diode Forward Current - A RDS(on) - Drain to Source On-State Resistance - Ω 2SK2353/2SK2354 0 0.1 1.0 10 ID - Drain Current - A 100 0 5 10 15 20 Qg - Gate Charge - nC 5 2SK2353/2SK2354 SINGLE AVALANCHE CURRENT vs INDUCTIVE LOAD SINGLE AVALANCHE ENERGY vs STARTING CHANNEL TEMPERATURE 100 ID(peak) = IAS RG = 25 Ω VGS = 20 V → 0 V VDD = 150 V 15 IAS - Single Avalanche Current - A EAS - Single Avalanche Energy - mJ 20 EAS = 17.4 mJ 10 5 0 25 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - ˚C 6 RG = 25 Ω VDD = 150 V VGS = 20 V → 0 Starting Tch = 25˚C 10 IAS = 4.5 A EAS =1 7.4 1.0 0.1 100 µ 1.0 m 10 m L - Inductive Load - H mJ 100 m 2SK2353/2SK2354 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 7 2SK2353/2SK2354 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6