DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm) switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES • High hFE and low VCE(sat): hFE ≥ 100 (VCE = −2 V, IC = −2 A) V CE(sat) ≤ 0.3 V (IC = −6 A, IB = −0.3 A) • Full-mold package that does not require an insulating board or bushing QUALITY GRADES Electrode Connection • Standard 1. Base Please refer to “Quality Grades on NEC Semiconductor Devices” 2. Collector (Document No. C11531E) published by NEC Corporation to know 3. Emitter the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO −100 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −7.0 V Collector current (DC) IC(DC) −10 A IC(pulse)* −20 A IB(DC) −5.0 A Total power dissipation PT (Tc = 25°C) 30 W Total power dissipation PT (Ta = 25°C) 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (pulse) Base current (DC) * PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16126EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 2SA1743 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. TYP. MAX. Collector to emitter voltage VCEO(SUS) IC = −6.0 A, IB = −0.6 A, L = 1 mH −60 V Collector to emitter voltage VCEX(SUS) IC = −6.0 A, IB1 = −IB2 = −0.6 A, VBE(OFF) = 1.5 V, L = 180 µH, clamped −60 V Collector cutoff current ICBO VCB = −60 V, IE = 0 −10 µA Collector cutoff current ICER VCE = −60 V, RBE = 50 Ω, Ta = 125°C −1.0 mA Collector cutoff current ICEX1 VCE = −60 V, VBE(OFF) = 1.5 V −10 µA Collector cutoff current ICEX2 VCE = −60 V, VBE(OFF) = 1.5 V, Ta = 125°C −1.0 mA Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −10 µA DC current gain hFE1* VCE = −2.0 V, IC = −1.0 A 100 DC current gain hFE2* VCE = −2.0 V, IC = −2.0 A 100 DC current gain hFE3* VCE = −2.0 V, IC = −6.0 A 60 400 Collector saturation voltage VCE(sat)1* IC = −6.0 A, IB = −0.3 A −0.3 V Collector saturation voltage VCE(sat)2* IC = −8.0 A, IB = −0.4 A −0.5 V Base saturation voltage VBE(sat)1* IC = −6.0 A, IB = −0.3 A −1.2 V Base saturation voltage VBE(sat)2* IC = −8.0 A, IB = −0.4 A −1.5 V Collector capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz 230 pF 80 MHz Gain bandwidth product fT VCE = −10 V, IC = −1.0 A Turn-on time ton Storage time tstg IC = −6.0 A, RL = 8.3 Ω, IB1 = −IB2 = −0.3 A, VCC ≅ −50 V 0.3 µs 1.5 µs 0.3 µs Refer to the test circuit. Fall time tf * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE2 100 to 200 150 to 300 200 to 400 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 Unit Data Sheet D16126EJ1V0DS 2SA1743 IC Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) Case Temperature TC (°C) Case Temperature TC (°C) Collector Current IC (A) Collector Current IC (A) Single pulse Collector to Emitter Voltage VCE (V) Transient Thermal Resistance Rth(j−c) (°C/W) Collector to Emitter Voltage VCE (V) Without heatsink With infinite heatsink Pulse Width PW (s) Data Sheet D16126EJ1V0DS 3 4 Fall Time tf (µs) StorageTime tstg (µs) Turn-On Time ton (µs) Collector Capacitance Cob (pF) Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) Pulse test Gain Bandwidth Product fT (MHz) DC Current Gain hFE Collector Current IC (A) 2SA1743 Pulse test Collector to Emitter Voltage VCE (V) Collector Current IC (A) Collector Current IC (A) Collector Current IC (A) Collector to Base Voltage VCB (V) Data Sheet D16126EJ1V0DS Collector Current IC (A) 2SA1743 [MEMO] Data Sheet D16126EJ1V0DS 5 2SA1743 • The information in this document is current as of July, 2001. 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