NEC 2SA1743L

DATA SHEET
SILICON POWER TRANSISTOR
2SA1743
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1743 is a power transistor developed for high-speed
PACKAGE DRAWING (UNIT: mm)
switching and features a high hFE at low VCE(sat). This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 (VCE = −2 V, IC = −2 A)
V CE(sat) ≤ 0.3 V (IC = −6 A, IB = −0.3 A)
• Full-mold package that does not require an insulating board or
bushing
QUALITY GRADES
Electrode Connection
• Standard
1. Base
Please refer to “Quality Grades on NEC Semiconductor Devices”
2. Collector
(Document No. C11531E) published by NEC Corporation to know
3. Emitter
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−100
V
Collector to emitter voltage
VCEO
−60
V
Emitter to base voltage
VEBO
−7.0
V
Collector current (DC)
IC(DC)
−10
A
IC(pulse)*
−20
A
IB(DC)
−5.0
A
Total power dissipation
PT (Tc = 25°C)
30
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current (pulse)
Base current (DC)
* PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16126EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
2SA1743
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Collector to emitter voltage
VCEO(SUS)
IC = −6.0 A, IB = −0.6 A, L = 1 mH
−60
V
Collector to emitter voltage
VCEX(SUS)
IC = −6.0 A, IB1 = −IB2 = −0.6 A,
VBE(OFF) = 1.5 V, L = 180 µH, clamped
−60
V
Collector cutoff current
ICBO
VCB = −60 V, IE = 0
−10
µA
Collector cutoff current
ICER
VCE = −60 V, RBE = 50 Ω, Ta = 125°C
−1.0
mA
Collector cutoff current
ICEX1
VCE = −60 V, VBE(OFF) = 1.5 V
−10
µA
Collector cutoff current
ICEX2
VCE = −60 V, VBE(OFF) = 1.5 V,
Ta = 125°C
−1.0
mA
Emitter cutoff current
IEBO
VEB = −5.0 V, IC = 0
−10
µA
DC current gain
hFE1*
VCE = −2.0 V, IC = −1.0 A
100
DC current gain
hFE2*
VCE = −2.0 V, IC = −2.0 A
100
DC current gain
hFE3*
VCE = −2.0 V, IC = −6.0 A
60
400
Collector saturation voltage
VCE(sat)1*
IC = −6.0 A, IB = −0.3 A
−0.3
V
Collector saturation voltage
VCE(sat)2*
IC = −8.0 A, IB = −0.4 A
−0.5
V
Base saturation voltage
VBE(sat)1*
IC = −6.0 A, IB = −0.3 A
−1.2
V
Base saturation voltage
VBE(sat)2*
IC = −8.0 A, IB = −0.4 A
−1.5
V
Collector capacitance
Cob
VCB = −10 V, IE = 0, f = 1.0 MHz
230
pF
80
MHz
Gain bandwidth product
fT
VCE = −10 V, IC = −1.0 A
Turn-on time
ton
Storage time
tstg
IC = −6.0 A, RL = 8.3 Ω,
IB1 = −IB2 = −0.3 A, VCC ≅ −50 V
0.3
µs
1.5
µs
0.3
µs
Refer to the test circuit.
Fall time
tf
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
Unit
Data Sheet D16126EJ1V0DS
2SA1743
IC Derating dT (%)
Total Power Dissipation PT (W)
TYPICAL CHARACTERISTICS (Ta = 25°°C)
Case Temperature TC (°C)
Case Temperature TC (°C)
Collector Current IC (A)
Collector Current IC (A)
Single pulse
Collector to Emitter Voltage VCE (V)
Transient Thermal Resistance Rth(j−c) (°C/W)
Collector to Emitter Voltage VCE (V)
Without heatsink
With infinite heatsink
Pulse Width PW (s)
Data Sheet D16126EJ1V0DS
3
4
Fall Time tf (µs)
StorageTime tstg (µs)
Turn-On Time ton (µs)
Collector Capacitance Cob (pF)
Base Saturation Voltage VBE(sat) (V)
Collector Saturation Voltage VCE(sat) (V)
Pulse test
Gain Bandwidth Product fT (MHz)
DC Current Gain hFE
Collector Current IC (A)
2SA1743
Pulse test
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
Collector Current IC (A)
Collector Current IC (A)
Collector to Base Voltage VCB (V)
Data Sheet D16126EJ1V0DS
Collector Current IC (A)
2SA1743
[MEMO]
Data Sheet D16126EJ1V0DS
5
2SA1743
• The information in this document is current as of July, 2001. The information is subject to change
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and/or types are available in every country. Please check with an NEC sales representative for
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M8E 00. 4