DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2461 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2461 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high speed switching applications. 10.0 ±0.3 FEATURES 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 • Low On-Resistance ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±20 A Drain Current (pulse)* ID(pulse) ±80 A Total Power Dissipation (Tc = 25 ˚C) PT1 35 W Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W 150 ˚C Channel Temperature Tch Storage Temperature Tstg 1.3 ±0.2 1.5 ±0.2 2.54 2.54 2.5 ±0.1 0.65 ±0.1 1. Gate 2. Drain 3. Source 1 2 3 –55 to +150 ˚C Single Avalanche Current** IAS 20 A Single Avalanche Energy** EAS 40 mJ * 0.7 ±0.1 13.5MIN. 4 ±0.2 3 ±0.1 15.0 ±0.3 RDS(on)2 = 0.1 Ω MAX. (@ VGS = 4 V, ID = 10 A) • Low Ciss Ciss = 1400 pF TYP. • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings 12.0 ±0.2 RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A) MP-45F (ISOLATED TO-220) PW ≤ 10 µs, Duty Cycle ≤ 1 % Drain ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Body Diode Gate Gate Protection Diode Source Document No. TC-2529 (O. D. No. TC-8078) Date Published April 1995 P Printed in Japan © 1995 2SK2461 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL Drain to Source On-Resistance MIN. TYP. RDS(on)1 MAX. UNIT 80 mΩ VGS = 10 V, ID = 10 A 70 100 mΩ VGS = 4 V, ID = 10 A 2.0 V VDS = 10 V, ID = 1 mA S VDS = 10 V, ID = 10 A 10 µA VDS = 100 V, VGS = 0 ±10 µA VGS = ±20 V, VDS = 0 58 Drain to Source On-Resistance RDS(on)2 Gate to Source Cutoff Voltage VGS(off) 1.0 1.7 Forward Transfer Admittance | yfs | 12 19 Drain Leakage Current IDSS TEST CONDITIONS Gate to Source Leakage Current IGSS Input Capacitance Ciss 1400 pF VDS = 10 V Output Capacitance Coss 470 pF VGS = 0 Reverse Transfer Capacitance Crss 150 pF f = 1 MHz Turn-On Delay Time td(on) 21 ns ID = 10 A Rise Time tr 110 ns VGS(on) = 10 V Turn-Off Delay Time td(off) 140 ns VDD = 50 V Fall Time tf 110 ns RG = 10 Ω Total Gate Charge QG 51 nC ID = 20 A Gate to Source Charge QGS 4.9 nC VDD = 80 V Gate to Drain Charge QGD 15 nC VGS = 10 V Body Diode Forward Voltage VF(S-D) 1.1 V IF = 20 A, VGS = 0 Reverse Recovery Time trr 170 ns IF = 20 A, VGS = 0 Reverse Recovery Charge Qrr 770 nC di/dt = 100 A/µs Test Circuit 1 Avalanche Capability D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V Test Circuit 2 Switching Time D.U.T. L 50 Ω VGS RL RG RG = 10 Ω PG. VDD VGS Wave Form 0 VGS (on) 10 % 90 % VDD ID 90 % 90 % BVDSS IAS ID ID VGS 0 VDS ID t VDD Starting Tch 0 10 % 10 % Wave Form t = 1 µs Duty Cycle ≤ 1 % td (on) tr ton td (off) tf toff Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2461 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 20 40 60 80 60 50 40 30 20 10 0 100 120 140 160 TC - Case Temperature - ˚C 40 60 80 100 120 140 160 TC - Case Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 50 VDS - Drain to Source Voltage - V ID - Drain Current - A µ FORWARD BIAS SAFE OPERATING AREA ID(pulse) 100 d PW ite V) im 10 10 =1 L ) 0 on S = 0 ( S s s RD t VG ID(DC) (a 1 m s 10 10 20 m Po s 0 w m er s DC Di ss ipa tio 1 n Lim ite d TC = 25 ˚C Single Pulse 0.1 1 10 100 1000 µ ID - Drain Current - A 20 VGS = 10 V VGS = 6 V 40 30 VGS = 4 V 20 10 0 2 4 6 8 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 1000 Pulsed 100 10 TA = –25 ˚C 25 ˚C 125 ˚C 1 0 VDS = 10 V 5 10 15 VGS - Gate to Source Voltage - V 3 2SK2461 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(ch-a) = 62.5 ˚C/W 100 10 1 Rth(ch-c) = 3.57 ˚C/W 0.1 0.01 Single Pulse 0.001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 1000 VDS=10 V Pulsed TA =–25 ˚C 25 ˚C 75 ˚C 125 ˚C 100 10 1 0.1 1 10 100 RDS(on) - Drain to Source On-State Resistance - mΩ ID - Drain Current - A 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 160 Pulsed 120 80 VGS = 4 V VGS = 10 V 40 0 1 10 ID - Drain Current - A 100 Pulsed 140 120 100 80 ID = 8.0 A 60 40 20 0 20 10 30 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cutoff Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - mΩ PW - Pulse Width - s VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 –50 0 50 100 150 Tch - Channel Temperature - ˚C SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 160 1000 ISD - Diode Forward Current - A 120 VGS = 4 V 80 VGS = 10 V 40 100 4V 10 VGS = 0 1 ID = 10 A 0 –50 0 100 50 0 150 Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1 000 VGS = 0 f = 1 MHz td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10 000 Ciss 1 000 Coss Crss 100 10 1 10 100 td(off) 100 tf tr td(on) 10 1.0 0.1 1 000 1.0 VDS - Drain to Source Voltage - V 10 ID - Drain Current - A 100 80 VDS - Drain to Source Voltage - V trr - Reverse Recovery time - ns 100 1.0 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 50 A/µ s VGS = 0 1 000 10 0.1 VDD = 50 V VGS =10 V RG =10 Ω 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 10 000 3.0 2.0 1.0 VDD = 80 V ID = 20 A 16 14 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - mΩ 2SK2461 12 60 VDS VGS 10 8 40 6 20 4 2 0 20 40 60 0 80 Qg - Gate Charge - nC 5 2SK2461 SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 160 IAS = 20 A EAS 10 =4 0m J 1.0 VDD = 50 V VGS = 20 V → 0 RG = 25 Ω 10 µ 100 µ VDD = 50 V RG = 25 Ω VGS = 20 V → 0 IAS ≤ 20 A 140 120 100 80 60 40 20 1m L - Inductive Load - H 6 Energy Derating Factor - % IAS - Single Avalanche Energy - mJ 100 10 m 0 25 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - ˚C 2SK2461 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 7 2SK2461 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11