NEC UPC8103

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
µPC8103T, µPC8108T
MIXER + OSCILLATOR IC FOR PAGER SYSTEM
DESCRIPTION
µPC8103T and µPC8108T are silicon monolithic integrated circuits designed as mixer-oscillator series for
pager system. Due to 1 V supply voltage, these ICs are suitable for low voltage pager system. These ICs are
packaged in 6 pin mini mold suitable for high-density surface mounting.
These ICs are manufactured using NEC’s 20 GHz fT NESATTM III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials contributes excellent DC, AC performance. Thus, these ICs are utilized as 1 V voltage ICs.
FEATURES
• 1 V supply voltage: VCC = 1.0 V to 2.0 V
• Low current consumption
µPC8103T: lCC = 1.0 mA
TYP.
@ VCC = 1.0 V
µPC8108T: lCC = 1.5 mA
TYP.
@ VCC = 1.0 V
µPC8103T: fRF = 150 MHz to 330 MHz
• Wide band operation
µPC8108T: fRF = 150 MHz to 930 MHz
• High-density surface mounting: 6 pin mini mold
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPC8103T-E3
µPC8108T-E3
6pin mini mold
SUPPLYING FORM
Embossed tape 8 mm wide, Pin 1, 2, 3 face to perforation side of
tape. QTY 3 kp/Reel
Note To order evaluation samples, please contact your local NEC sales office. (Order number: µPC8103T,
µPC8108T)
PIN CONNECTION
3
2
1
C2C
(Top View)
Markings
(Bottom View)
4
4
3
5
5
2
6
6
1
1:
2:
3:
4:
5:
6:
RF INPUT
GND
OSC EMITTER
OSC BASE
VCC
IF OUTPUT
µ PC8103T: C2C
µ PC8108T: C2F
Caution Electro-static sensitive devices
Document No. IC-3450
(O.D. No. IC-8980)
Date Published July 1995 P
Printed in Japan
©
1995
µPC8103T, µPC8108T
INTERNAL BOLOCK DIAGRAM (IN COMMON)
3
4
2
BIAS
1
5
Note Resonator must be externally
6
equipped with 3 and 4 pins.
(Refer to pin explanations)
SYSTEM APPLICATION EXAMPLE AS PAGER
150 MHz to 330 MHz
µ PC8102T
µ PC8103T
BPF
BPF
IF
450 MHz to 930 MHz
Low noise
transistor
µ PC8108T
BPF
BPF
IF
This system application example schematically presents the chip set product line-up only, and does not
imply a detail application circuit (In the case of application circuit example for µPC8103T and µ PC8108T, please
refer to page 21).
For details on the related devices, refer to the latest data sheet of each device.
2
µPC8103T, µPC8108T
PIN EXPLANATION (µPC8103T, µPC8108T IN COMMON)
PIN NO.
PIN NAME
SUPPLY
PIN
VOLTAGE (V) VOLTAGE (V)
1
RF input
—
0.77
2
GND
0
—
FUNCTION AND APPLICATION
EQUIVALENT CIRCUIT
RF input for mixer. This port
is low impedance.
This ground pin must be
connected to the system
ground with minimum
inductance. Ground pattern
on the board should be
formed as wide as possible.
Track length should be kept as
short as possible.
3
OSC Emitter
—
0.19
4
OSC Base
—
0.95
5
VCC
1.0 to 2.0
—
Supply voltage pin.
Connect bypass capacitor (eg
1 000 pF) to minimize ground
impedance.
6
IF Output
Same bias
as VCC
through
external
inductor
(L)
—
IF output pin from mixer.
This pin is designed as open
collector and should be
equipped with inductor (L)
because of high impedance
port.
Emitter, base pins of internal
transistor for oscillator.
These pins should be externally equipped with resonator
circuit of X’tal or LC.
5
4
6
3
2
1
Note Each PIN VOLTAGE is measured with VCC = 1.0 V.
3
µ PC8103T, µ PC8108T
Unless otherwise specified, both product in common.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
Supply Voltage
VCC
4.0
V
Power Dissipation
PD
280
mW
Operating Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
VIFout MAX.
5
V
IF Output Voltage Peak Level
CONDITIONS
TA = +25 °C, Pin 5 and 6
Mounted on 50 × 50 × 1.6 mm double copper
clad epoxy glass PWB at TA = +85 °C
TA = +25 °C
RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
NOTE
Supply Voltage
VCC
1.0
1.05
2.0
V
Pin 5 and 6
Operating Temperature
TA
−25
+25
+75
°C
Possible to oscillate
RF Frequency
fRF
150
330
MHz
µPD8103T
RF Frequency
fRF
150
930
MHz
µPD8108T
ELECTRICAL CHARACTERISTICS (TA = +25 ˚C, VCC = 1.0 V, ZS = 50 Ω, ZL = 2 kΩ, fIF = 20 MHz,
PLoin = −21 dBm externally, Upper local Note)
PARAMETER
µPC8103T
SYMBOL
UNIT
CONDITIONS
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
ICC
0.55
1
1.4
1.0
1.5
2.1
mA
No input signals
Conversion Gain 1
CG1
13
16
19
17.5
20.5
23.5
dB
f RFin = 150 MHz,
TEST CIRCUIT 1
Conversion Gain 2
CG2
12.5
15.5
18.5
17
20
23
dB
f RFin = 280 MHz,
TEST CIRCUIT 1
Conversion Gain 3
CG3
12.5
15.5
18.5
17
20
23
dB
f RFin = 330 MHz,
TEST CIRCUIT 1
Conversion Gain 4
CG4
–
–
–
16
19
22
dB
f RFin = 450 MHz,
TEST CIRCUIT 1
Conversion Gain 5
CG5
–
–
–
12
15
18
dB
f RFin = 930 MHz,
TEST CIRCUIT 1
Circuit Current
Note Upper local means ‘fIF = fLoin – f RFin’.
4
µPC8108T
µPC8103T, µPC8108T
STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25 ˚C, VCC = 1.0 V, ZS = ZL = 50 Ω,
fIF = 20 MHz, PLoin externally, Upper local)
µPC8103T
µPC8108T
SYMBOL
PLoin =
–21 dBm
PLoin =
–10 dBm
PLoin =
–21 dBm
PLoin =
–10 dBm
UNIT
Noise Figure 1
NF1
13
9
13
8.5
dB
fRFin = 150 MHz,
TEST CIRCUIT 2
Noise Figure 2
NF2
11.5
8
12
7
dB
fRFin = 280 MHz,
TEST CIRCUIT 2
Noise Figure 3
NF3
12
9
13
8
dB
fRFin = 330 MHz,
TEST CIRCUIT 2
Noise Figure 4
NF4
–
–
13.5
8
dB
fRFin = 450 MHz,
TEST CIRCUIT 2
Noise Figure 5
NF5
–
–
18
11.5
dB
fRFin = 930 MHz,
TEST CIRCUIT 2
PARAMETER
CONDITIONS
Note Upper local means ‘fIF = fLoin – fRFin’.
5
µPC8103T, µPC8108T
TEST CIRCUIT 1
RS = 50 Ω, RL = 2 kΩ (CG MEASUREMENT)
Signal Generator (Lo)
1 000 pF
50 Ω
C2
1 000 pF 3 300 pF 1 000 pF
C3
3
C2C
NC
2
C1
1
50 Ω
VCC
C5
C4
4
5
L
150 µH
R
2 kΩ*
6
1 000 pF
C6
1 000 pF
50 Ω
Supplement:
(50 Ω means impedance of measurement equipment)
Signal Generator (RF)
Spectrum Analyser
* Note On 50 Ω measurement, this high inpedance IFout needs the calculatiuon as follows
CG (dB) = Measured value +20 log10
2 kΩ
50 Ω
TEST CIRCUIT 2
RS = RL = 50 Ω (NF MEASUREMENT)
Signal Generator (Lo)
1 000 pF
50 Ω
C2
1 000 pF 3 300 pF 1 000 pF
C3
3
C2C
NC
2
C1
1
4
5
L
150 µH
6
1 000 pF
20 MHz
C6
NOISE SOURCE
NF meter
50 Ω
6
50 Ω
1 000 pF
C4
C5
VCC
µPC8103T, µPC8108T
ILLUSTRATION OF TEST CIRCUITS ASSEMBLED ON EVALUATION BOARD
SURFACE (IC mounted pattern)
A
Backside (Ground pattern)
B
C5
B’
A’
EX-LO
C2
C3
C4
L
RF IN
C1
R
IN
C6
IF OUT
OUT
µPC8103T
8108T
C
Note
D
D’
C’
(*1) 35 × 42 × 0.4 mm double sided copper clad polyimide board
(*2) Solder plated pattern
(*3) Surface vs. backside : A - A’, B - B’, C - C’, D - D’
(*4)
should be removed.
(*5) In the care of NF measurement, remove R and short.
(*6)
: Through holes
7
µPC8103T, µPC8108T
CHARACTERISTIC CURVES (Unless otherwise specified with TEST CIRCUIT 1 or 2)
— µPC8103T —
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
CIRCUIT CURRENT vs. OPERATING TEMPERATURE
8
No signal
7
10
No signal
Circuit Current ICC (mA)
Circuit Current ICC (mA)
8
6
4
6
5
VCC = 2.0 V
4
VCC = 1.5 V
3
VCC = 1.0 V
2
2
1
VCC = 0.9 V
0
0
1
2
3
0
–40
4
–20
Supply Voltage VCC (V)
0
20
40
60
80
100
Operating temperature TA (˚C)
RF FREQUENCY vs. CONVERSION GAIN
RF FREQUENCY vs. CONVERSION GAIN
35
35
VCC = 2.0 V
30
25
VCC = 1.5 V
20
VCC = 1.0 V
15
VCC = 0.9 V
10
5
PLoin = –10 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0
0.1
VCC = 2.0 V
25
20
VCC = 1.5 V
15
VCC = 1.0 V
10
5
0.3
0.5
RF input frequency fRFin (GHz)
8
Conversion Gain CG (dB)
Conversion Gain CG (dB)
30
1
PLoin = –21 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0
0.1
VCC = 0.9 V
0.3
0.5
RF input frequency fRFin (GHz)
1
µPC8103T, µPC8108T
— µPC8103T —
RF FREQUENCY vs. CONVERSION GAIN
35
30
30
TA =+85 ˚C
25
20
TA = –20 ˚C
TA = +25 ˚C
15
10
5
Conversion Gain CG (dB)
Conversion Gain CG (dB)
RF FREQUENCY vs. CONVERSION GAIN
35
TA = –40 ˚C
VCC = 1.0 V
PLoin = –10 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0
0.1
25
20
15
TA = –20 ˚C
10
5
0.3
0.5
VCC = 1.0 V
PLoin = –21 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0
0.1
1
RF input frequency fRFin (GHz)
25
VCC = 0.9 V
PLoin = –10 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
30
TA = +85 ˚C
20
TA = +25 ˚C
15
10
0.3
TA = –20 ˚C
1
25
VCC = 0.9 V
PLoin = –21 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
20
TA = +85 ˚C
15
TA = +25 ˚C
10
TA = –20 ˚C
5
5
TA = –40 ˚C
TA = –40 ˚C
0
0.1
0.5
RF FREQUENCY vs. CONVERSION GAIN
35
Conversion Gain CG (dB)
Conversion Gain CG (dB)
30
TA = –40 ˚C
RF input frequency fRFin (GHz)
RF FREQUENCY vs. CONVERSION GAIN
35
TA = +85 ˚C
TA = +25 ˚C
0.3
0.5
RF input frequency fRFin (GHz)
1
0
0.1
0.3
0.5
1
RF input frequency fRFin (GHz)
9
µPC8103T, µPC8108T
— µPC8103T —
RF FREQUENCY vs. CONVERSION GAIN
RF FREQUENCY vs. CONVERSION GAIN
35
35
TA = +85 ˚C
TA = +25 ˚C
30
30
Conversion Gain CG (dB)
Conversion Gain CG (dB)
TA = +25 ˚C
25
TA = –20 ˚C
TA = –40 ˚C
20
15
10
5
VCC = 2.0 V
PLoin = –10 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0
0.1
20
0.5
TA = –40 ˚C
TA = –20 ˚C
15
10
5
0.3
VCC = 2.0 V
PLoin = –21 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0
0.1
1
RF FREQUENCY vs. CONVERSION GAIN
TA = +85 ˚C
TA = +25 ˚C
25
TA = –20 ˚C
20
TA = –40 ˚C
15
VCC = 1.5 V
PLoin = –10 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0
0.1
30
Conversion Gain CG (dB)
Conversion Gain CG (dB)
1
35
30
0.3
0.5
1
TA = +85 ˚C
25
TA = +25 ˚C
20
TA = –20 ˚C
TA = –40 ˚C
15
10
5
RF input frequency fRFin (GHz)
10
0.5
RF FREQUENCY vs. CONVERSION GAIN
35
5
0.3
RF input frequency fRFin (GHz)
RF input frequency fRFin (GHz)
10
TA = +85 ˚C
25
VCC = 1.5 V
PLoin = –21 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0
0.1
0.3
0.5
RF input frequency fRFin (GHz)
1
µPC8103T, µPC8108T
— µPC8103T —
Local input level vs. CONVERSION GAIN
35
PRFin = –35 dBm
30
fIF = 20 MHz
Upper local
Conversion Gain CG (dB)
Conversion Gain CG (dB)
30
Local input level vs. CONVERSION GAIN
35
VCC = 0.9 V
25
20
fRFin = 280 MHz
fRFin = 150 MHz
15
10
fIF = 20 MHz
Upper local
25
20
fRFin = 150 MHz
fRFin = 280 MHz
15
fRFin = 900 MHz
10
fRFin = 450 MHz
fRFin = 900 MHz
5
VCC = 1.0 V
PRFin = –35 dBm
5
fRFin = 450 MHz
0
–30
–25
–20
–15
0
–30
–10
Local input level PLoin (dBm)
–15
–10
Local input level vs. CONVERSION GAIN
Local input level vs. CONVERSION GAIN
35
30
25
fRFin = 280 MHz
20
fRFin = 450 MHz
fRFin = 900 MHz
15
10
VCC = 1.5 V
PRFin = –35 dBm
5
Upper local
–20
–15
Local input level PLoin (dBm)
25
fRFin = 280 MHz
fRFin = 450 MHz
20
fRFin = 900 MHz
15
10
VCC = 2.0 V
PRFin = –35 dBm
5
fIF = 20 MHz
–25
fRFin = 150 MHz
30
fRFin = 150 MHz
Conversion Gain CG (dB)
Conversion Gain CG (dB)
–20
Local input level PLoin (dBm)
35
0
–30
–25
–10
0
–30
fIF = 20 MHz
Upper local
–25
–20
–15
–10
Local input level PLoin (dBm)
11
µPC8103T, µPC8108T
— µPC8103T —
Local input level vs. CONVERSION GAIN
Local input level vs. CONVERSION GAIN
25
25
TA = +85 ˚C
TA = +85 ˚C
20
TA = +25 ˚C
Conversion Gain CG (dB)
Conversion Gain CG (dB)
20
15
TA = –40 ˚C
10
TA = –20 ˚C
5
VCC = 1.0 V
PRFin = –35 dBm
0
TA = +25 ˚C
15
10
TA = –40 ˚C
TA = –20 ˚C
5
VCC = 1.0 V
PRFin = –35 dBm
0
fRFin = 150 MHz
fRFin = 280 MHz
fLoin = 170 MHz
–5
–30
–25
–20
–15
fLoin = 300 MHz
–5
–30
–10
Local input level PLoin (dBm)
–15
–10
RF FREQUENCY vs. NOISE FIGURE
RF FREQUENCY vs. NOISE FIGURE
20
PLoin = –10 dBm
fIF = 20 MHz
Upper local
PLoin = –21 dBm
fIF = 20 MHz
Upper local
VCC = 1.0 V
15
10
Noise Figure NF (dB)
15
Noise Figure NF (dB)
–20
Local input level PLoin (dBm)
20
VCC = 1.5 V
0
0.1
VCC = 1.0 V
10
VCC = 1.5 V
5
5
0.3
0.5
RF input frequency fRFin (GHz)
12
–25
1
0
0.1
0.3
0.5
RF input frequency fRFin (GHz)
1
µPC8103T, µPC8108T
— µPC8103T —
RF input level vs. IF output level and IM3
RF input level vs. IF output level and IM3
+10
+10
VCC = 1.0 V
0
VCC = 1.0 V
fLoin = 170 MHz
fLoin = 300 MHz
PLoin = –21 dBm
PLoin = –21 dBm
0
fRFin (des) = 150.0 MHz
fRFin (undes) = 280.5 MHz
IF output level of each tone PIF (dBm)
3rd order intermodelation distortion level IM3 (dBm)
IF output level of each tone PIF (dBm)
3rd order intermodelation distortion level IM3 (dBm)
fRFin (undes) = 150.5 MHz
TEST CIRCUIT 1
–10
IFout
–20
–30
–40
IM3
–50
–60
–50
fRFin (des) = 280.0 MHz
TEST CIRCUIT 1
–10
IFout
–20
–30
–40
IM3
–50
–40
–30
–20
RF input level PRFin (dBm)
–10
–60
–50
–40
–30
–20
–10
RF input level PRFin (dBm)
13
µPC8103T, µPC8108T
— µPC8108T —
CIRCUIT CURRENT vs. OPERATING TEMPERATURE
10
No sigual
9
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
14
No sigual
12
Circuit Current ICC (mA)
Circuit Current ICC (mA)
8
10
8
6
4
VCC = 2.0 V
7
6
VCC = 1.5 V
5
4
VCC = 1.0 V
3
2
2
0
1
0
1
2
3
VCC = 0.9 V
0
–40
4
–20
0
40
20
60
80
100
Operating Temperature TA (˚C)
Supply Voltage VCC (V)
RF FREQUENCY vs. CONVERSION GAIN
RF FREQUENCY vs. CONVERSION GAIN
35
35
VCC = 2.0 V
30
25
VCC = 1.0 V
20
VCC = 0.9 V
15
10
5
PLoin = –10 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0
0.1
25
0.3
0.5
1
VCC = 1.5 V
20
VCC = 1.0 V
15
VCC = 0.9 V
10
5
RF input frequency fRFin (GHz)
14
VCC = 2.0 V
VCC = 1.5 V
Conversion Gain CG (dB)
Conversion Gain CG (dB)
30
PLoin = –21 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0
0.1
0.3
0.5
RF input frequency fRFin (GHz)
1
µPC8103T, µPC8108T
— µPC8108T —
RF FREQUENCY vs. CONVERSION GAIN
RF FREQUENCY vs. CONVERSION GAIN
35
35
TA = +85 ˚C
30
30
25
Conversion Gain CG (dB)
Conversion Gain CG (dB)
TA = +25 ˚C
TA = –20 ˚C
20
TA = –40 ˚C
15
10
5
VCC = 1.0 V
PLoin = –10 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0
0.1
TA = +25 ˚C
20
15
10
5
0.3
0.5
TA = +85 ˚C
25
TA = –20 ˚C
VCC = 1.0 V
PLoin = –21 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0
0.1
1
RF input frequency fRFin (GHz)
35
30
30
Conversion Gain CG (dB)
Conversion Gain CG (dB)
TA = +85 ˚C
25
TA = +25 ˚C
20
TA = –20 ˚C
15
5
0
0.1
0.5
1
RF FREQUENCY vs. CONVERSION GAIN
RF FREQUENCY vs. CONVERSION GAIN
VCC = 0.9 V
PLoin = –10 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0.3
RF input frequency fRFin (GHz)
35
10
TA = –40 ˚C
25
VCC = 0.9 V
PLoin = –21 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
20
TA = +85 ˚C
TA = +25 ˚C
15
TA = –20 ˚C
10
5
TA = –40 ˚C
TA = –40 ˚C
0.3
0.5
RF input frequency fRFin (GHz)
1
0
0.1
0.3
0.5
1
RF input frequency fRFin (GHz)
15
µPC8103T, µPC8108T
— µPC8108T —
RF FREQUENCY vs. CONVERSION GAIN
RF FREQUENCY vs. CONVERSION GAIN
35
TA = +85 ˚C
TA = +25 ˚C
30
Conversion Gain CG (dB)
30
Conversion Gain CG (dB)
35
TA = –20 ˚C
25
TA = –40 ˚C
20
15
10
5
VCC = 1.5 V
PLoin = –10 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0
0.1
TA = +85 ˚C
25
20
0.5
10
VCC = 1.5 V
PLoin = –21 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0
0.1
1
TA = –40 ˚C
15
5
0.3
TA = –20 ˚C
TA = +25 ˚C
0.3
0.5
1
RF input frequency fRFin (GHz)
RF input frequency fRFin (GHz)
RF FREQUENCY vs. CONVERSION GAIN
RF FREQUENCY vs. CONVERSION GAIN
35
35
TA = +85 ˚C
TA = +25 ˚C
30
30
25
TA = –40 ˚C
20
15
10
5
VCC = 2.0 V
PLoin = –10 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0
0.1
0.3
0.5
1
TA = +25 ˚C
25
20
TA = –20 ˚C
TA = –40 ˚C
15
10
5
RF input frequency fRFin (GHz)
16
Conversion Gain CG (dB)
Conversion Gain CG (dB)
TA = +85 ˚C
TA = –20 ˚C
VCC = 2.0 V
PLoin = –21 dBm
PRFin = –35 dBm
fIF = 20 MHz
Upper local
0
0.1
0.3
0.5
RF input frequency fRFin (GHz)
1
µPC8103T, µPC8108T
— µPC8108T —
Local input level vs. CONVERSION GAIN
35
30
30
25
fRFin = 280 MHz
fRFin = 150 MHz
20
15
fRFin = 900 MHz
10
5
0
–30
VCC = 0.9 V
Conversion Gain CG (dB)
Conversion Gain CG (dB)
Local input level vs. CONVERSION GAIN
35
fRFin = 150 MHz
fRFin = 280 MHz
25
20
fRFin = 900 MHz
15
fRFin = 450 MHz
10
VCC = 1.0 V
fRFin = 450 MHz PRFin = –35 dBm
PRFin = –35 dBm
5
fIF = 20 MHz
fIF = 20 MHz
Upper local
–25
–20
–15
Upper local
0
–30
–10
Local input level PLoin (dBm)
–25
–20
–15
–10
Local input level PLoin (dBm)
Local input level vs. CONVERSION GAIN
Local input level vs. CONVERSION GAIN
35
35
fRFin = 280 MHz
fRFin = 150 MHz
fRFin = 900 MHz
20
15
fRFin = 450 MHz
10
VCC = 1.5 V
PRFin = –35 dBm
5
0
–30
Upper local
–20
–15
Local input level PLoin (dBm)
25
fRFin = 150 MHz
fRFin = 900 MHz
20
15
fRFin = 450 MHz
10
VCC = 2.0 V
PRFin = –35 dBm
5
fIF = 20 MHz
–25
Conversion Gain CG (dB)
Conversion Gain CG (dB)
25
30
fRFin = 280 MHz
30
–10
0
–30
fIF = 20 MHz
Upper local
–25
–20
–15
–10
Local input level PLoin (dBm)
17
µPC8103T, µPC8108T
— µPC8108T —
Local input level vs. CONVERSION GAIN
Local input level vs. CONVERSION GAIN
30
30
TA = +85 ˚C
TA = +85 ˚C
25
25
TA = +25 ˚C
Conversion Gain CG (dB)
Conversion Gain CG (dB)
TA = +25 ˚C
20
TA = –40 ˚C
15
TA = –20 ˚C
10
VCC = 1.0 V
fRFin = 280 MHz
5
20
TA = –40 ˚C
15
TA = –20 ˚C
10
VCC = 1.0 V
fRFin = 150 MHz
5
PRFin = –35 dBm
PRFin = –35 dBm
fLoin = 170 MHz
0
–30
–25
–20
–15
fLoin = 170 MHz
0
–30
–10
Local input level PLoin (dBm)
–25
–20
–15
–10
Local input level PLoin (dBm)
Local input level vs. CONVERSION GAIN
Local input level vs. CONVERSION GAIN
30
30
TA = +85 ˚C
25
TA = +25 ˚C
Conversion Gain CG (dB)
Conversion Gain CG (dB)
25
20
15
TA = –40 ˚C
TA = –20 ˚C
10
VCC = 1.0 V
fRFin = 450 MHz
5
20
TA = +85 ˚C
TA = +25 ˚C
15
TA = –40 ˚C
10
TA = –20 ˚C
5
PRFin = –35 dBm
PRFin = –35 dBm
fLoin = 470 MHz
0
–30
–25
–20
–15
Local input level PLoin (dBm)
18
VCC = 1.0 V
fRFin = 900 MHz
fLoin = 920 MHz
–10
0
–30
–25
–20
–15
Local input level PLoin (dBm)
–10
µPC8103T, µPC8108T
— µPC8108T —
RF FREQUENCY vs. NOISE FIGURE
RF FREQUENCY vs. NOISE FIGURE
20
20
VCC = 1.5 V
15
Noise Figure NF (dB)
Noise Figure NF (dB)
15
VCC = 1.0 V
10
PLoin = –10 dBm
fIF = 20 MHz
Upper local
PLoin = –21 dBm
fIF = 20 MHz
Upper local
0
0.1
0.3
0.5
0
0.1
1
RF input frequency fRFin (GHz)
0.3
RF input level vs. IF output level and IM3
1
RF input level vs. IF output level and IM3
+10
VCC = 1.0 V
VCC = 1.0 V
fLoin = 170 MHz
fLoin = 300 MHz
PLoin = –21 dBm
PLoin = –21 dBm
0
fRFin (des) = 150.000 MHz
fRFin (des) = 280.000 MHz
fRFin (undes) = 280.025 MHz
TEST CIRCUIT 1
TEST CIRCUIT 1
IF output level of each tone PIF (dBm)
3rd order intermodulation distortion IM3 (dBm)
fRFin (undes) = 150.025 MHz
–10
IFout
–20
–30
–40
IM3
–50
–60
–50
0.5
RF input frequency fRFin (GHz)
+10
IF output level of each tone PIF (dBm)
3rd order intermodulation distortion IM3 (dBm)
VCC = 1.5 V
VCC = 1.0 V
5
5
0
VCC = 1.0 V
VCC = 1.5 V
10
–10
IFout
–20
–30
–40
IM3
–50
–40
–30
–20
RF input level PRFin (dBm)
–10
–60
–50
–40
–30
–20
–10
RF input level PRFin (dBm)
19
µPC8103T, µPC8108T
— µPC8108T —
RF input level vs. IF output level and IM3
RF input level vs. IF output level and IM3
+10
+10
VCC = 1.0 V
fLoin = 950 MHz
PLoin = –21 dBm
PLoin = –21 dBm
0
fRFin (des) = 450.000 MHz
fRFin (undes) = 930.025 MHz
TEST CIRCUIT 1
TEST CIRCUIT 1
–10
IFout
–20
–30
–40
IM3
–50
–60
–50
–10
IFout
–20
–30
–40
IM3
–50
–40
–30
–20
RF input level PRFin (dBm)
20
fRFin (des) = 930.000 MHz
fRFin (undes) = 450.025 MHz
IF output level of each tone PIF (dBm)
3rd order intermodulation distortion IM3 (dBm)
IF output level of each tone PIF (dBm)
3rd order intermodulation distortion IM3 (dBm)
0
VCC = 1.0 V
fLoin = 470 MHz
–10
–60
–50
–40
–30
–20
RF input level PRFin (dBm)
–10
µPC8103T, µPC8108T
Application circuit example (In the case of µPC8103T)
8 pF
150 nH (68+82 nH)
L2+L3
C4
152.2400 MHz
(Overtone Xtal)
16 pF
3
C3
11 pF
C2C
C2
2
R1
4.3 kΩ
L1
56 nH
C5
R2
22 pF
4.3 kΩ
4
5
VCC (1.05 V)
L4
1
150 µH
C7
6
1 000 pF
X'tal
BPF
C6
1 000 pF
High impedance
IF OUT
21.7 MHz
(KSS 21.7-7A)
C1
1 000 pF
Low impedance
RF IN (173.94 MHz, –40 dBm)
ILLUSTRATION OF APPLICATION CIRCUIT ASSEMBLED ON EVALUATION BOARD
SURFACE
A
R2
L1 C3
R1
B
B’
BACKSIDE
A’
(EX-LO)
C5
C2
C4 L2 L3
C6
L4
RF IN
X'tal
BPF
C1
C7
IN
IF OUT
OUT
µPC8103T
8108T
C
Note
D
D’
C’
(*1) 35 × 42 × 0.4 mm double copper clad polyimide board
(*2) Solder plated pattern
(*3) Surface vs. Backside : A - A’, B - B’, C - C’, D - D’
(*4)
: Through holes
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
21
µPC8103T, µPC8108T
— With application circuit (µPC8103T) —
RF input level vs. IF output level
Spectrum of Overtone Oscillation (without RF signal)
REF 0.0 dBm
0
ATTEN 10 dB
MKR 152.0 MHz
–32.30 dBm
10 dB/
IF Output level PIF (dBm)
–10
MARKER
152.0 MHz
–32.30 dBm
–20
–30
–40
–50
–40
–30
–20
–10
RF input level PRFin (dBm)
0
CENTER 100 MHz
RES BW 1 MHz
This measurement needs the calculation
as same as TEST CIRCUIT 1.
VBW 1 kHz
↑
ref.
SPAN 200 MHz
SWP 1.00 sec
↑
2 × ref.
(desired
OSC freq.)
5
1 000 pF
4
22
Spectrum Analyzer (@ No RF signal)
µPC8103T, µPC8108T
6 PIN MINI MOLD PACKAGE DIMENSIONS (Unit : mm)
0.13±0.1
0.3 +0.1
–0.05
2
3
1.5 +0.2
–0.1
2.8 +0.2
–0.3
1
0 to 0.1
6
5
4
0.95
0.95
1.9
0.8
1.1 +0.2
–0.1
2.9±0.2
23
µPC8103T, µPC8108T
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as wide as possible to maintain the minimum ground impedance (to prevent
undesired oscillation).
(3) Keep the wiring length of the ground pins as short as possible.
(4) Connect a bypass capacitor (eg 1 000 pF) to the Vcc pin.
(5) Insert the inductor (eg L = 150 µH) between 5 and 6 pins.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered in the following recommended conditions. Other soldering methods
and conditions than the recommended conditions are to be consulted with our sales representatives.
µPC8103T, µPC8108T
Recommended
condition symbol
Soldering process
Soldering conditions
Infrared ray reflow
Package peak temperature: 235 ˚C, Hour: within 30 s. (more than 210 ˚C),
Time: 2 time, Limited days: no.Note
IR35-00-2
VPS
Package peak temperature: 215 ˚C, Hour: within 40 s. (more than 200 ˚C),
Time: 2 time, Limited days: no.Note
VP15-00-2
Wave soldering
Soldering tub temperature: less than 260 ˚C, Hour: within 10 s.
Time: 1 time, Limited days: no.Note
WS60-00-1
Pin part heating
Pin area temperature: less than 300 ˚C, Hour: within 10 s.
Limited days: no.Note
Note It is the storage days after opening a dry pack, the storage conditions are 25 ˚C, less than 65 % RH.
Caution
The combined use of soldering method is to be avoided (However, except the pin area heating
method).
For details of recommended soldering conditions for surface mounting, refer to information
document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (IEI-1207)
24
µPC8103T, µPC8108T
[MEMO]
25
µPC8103T, µPC8108T
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
16