NTE NTE366

NTE366
Silicon NPN Transistor
RF Power Output
PO = 25W @ 512MHz
Description:
The NTE366 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.
Features:
D Specified 12.5 Volt, 470MHz Characteristic:
Output Power = 25 Watts
Minimum Gain = 6.2dB
Efficiency = 60%
D Characterized with Series Equivalent Large–Signal Impedance Parameters
D Built–In Matching Network for Broadband Operation
D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–volt High Line
and Overdrive
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V(BR)CEO
IC = 20mA, IB = 0
16
–
–
V
V(BR)CES
IC = 20mA, VBE = 0
36
–
–
V
V(BR)EBO
IE = 5mA, IC = 0
4
–
–
V
VCE = 15V, VBE = 0, TC = +25°C
–
–
10
mA
ICES
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
ON Characteristics
DC Current Gain
hFE
VCE = 5V, IC = 4A
40
70
100
Cob
VCB = 12.5V, IE = 0, f = 1MHz
–
90
125
pF
Common–Emitter Amplifier Power Gain
GPE
POUT = 25W, VCC = 12.5V,
ICmax = 3.6A, f = 470MHz
6.2
7.0
–
dB
Input Power
Pin
POUT = 25W, VCC = 12.5V, f = 470MHz
–
5
6
W
Collector Efficiency
η
55
60
–
%
Output Mismatch Stress
ψ
VCC = 16V, Pin = Note 1, f = 470MHz,
VSWR = 20:1, All Phase Angles
No Degradation in
Output Power
Series Equivalent Input Impedance
Zin
POUT = 25W, VCC = 12.5V, f = 470MHz
–1.2 + j3.3 –
Ω
Series Equivalent Output Impedance
ZOL
–1.9 + j2.1 –
Ω
Dynamic Characteristics
Output Capacitance
Functional Test
Note 1. Pin = 150% of Drive Requirement for 25W output @ 12.5V.
Note 2. y = Mismatch stress factor – the electrical criterion established to verify the device resistance
to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture
terminated in a 20:1 minimum load mismatch at all phase angles.
.215 (5.48)
.205 (5.18)
.122 (3.1) Dia
E
B
.405
(10.3)
Min
C
E
.155 (3.94)
.500 (12.7) Dia
.005 (0.15)
.270
(6.85)
.160 (4.06)
.725 (18.43)
.975 (24.78)