DISCRETE SEMICONDUCTORS DATA SHEET BLY89C VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLY89C DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION VCC V f MHz PL W Gp dB η % zi Ω c.w. 13,5 175 25 >6 >70 1,6 + j1,4 PIN CONFIGURATION 210 + j5,5 PINNING - SOT120 PIN halfpage YL mS 4 1 c 3 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter handbook, halfpage b MBB012 e 2 MSB056 Fig.1 Simplified outline and symbol. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification VHF power transistor BLY89C RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value VCESM max 36 V Collector-emitter voltage (open base) VCEO max 18 V Emitter-base voltage (open collector) VEBO max 4 V Collector current (average) IC(AV) max 6 A Collector current (peak value); f > 1 MHz ICM max 12 A R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Prf max 73 W MGP864 MGP865 80 10 handbook, halfpage handbook, halfpage ΙΙΙ Prf IC (W) (A) derate by 0.38 W/K 60 Th = 70 °C Tmb = 25 °C ΙΙ derate by 0.29 W/K 40 Ι 20 1 1 10 VCE (V) 0 102 I 50 Th (°C) 100 Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch Fig.2 D.C. soar. Fig.3 R.F. power dissipation; VCE ≤ 16,5 V; f > 1 MHz. THERMAL RESISTANCE (dissipation 20 W; Tmb = 79 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) Rth j-mb(dc) = 3,1 K/W From junction to mounting base (r.f. dissipation) Rth j-mb(rf) = 2,3 K/W From mounting base to heatsink Rth mb-h = 0,45 K/W August 1986 3 Philips Semiconductors Product specification VHF power transistor BLY89C CHARACTERISTICS Tj = 25 °C Breakdown voltage Collector-emitter voltage VBE = 0; IC = 25 mA V(BR)CES > 36 V V(BR)CEO > 18 V V(BR)EBO > 4 V ICES < 10 mA E > 8 ms E > 8 ms Collector-emitter voltage open base; IC = 50 mA Emitter-base voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 18 V Transient energy L = 25 mH; f = 50 Hz open base −VBE = 1,5 V; RBE = 33 Ω D.C. current gain(1) IC = 2,5 A; VCE = 5 V Collector-emitter saturation hFE typ 50 10 to 80 voltage(1) IC = 7,5 A; IB = 1,5 A VCEsat typ 1,7 V IC = 2,5 A; VCE = 13,5 V fT typ 800 MHz IC = 7,5 A; VCE = 13,5 V fT typ 750 MHz Transition frequency at f = 100 MHz(1) Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 15 V Cc typ 65 pF < 90 pF Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 15 V Cre typ 41 pF Collector-stud capacitance Ccs typ 2 pF Note 1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02. August 1986 4 Philips Semiconductors Product specification VHF power transistor BLY89C MGP866 75 hFE MGP867 200 typical values Tj = 25 °C handbook, halfpage handbook, halfpage VCE = 13.5 V Cc (pF) 5V 50 IE = Ie = 0 f = 1 MHz 100 typ 25 0 0 0 5 10 IC (A) 15 0 10 Fig.4 20 VCB (V) Fig.5 MGP868 1000 handbook, full pagewidth VCE = 13.5 V f = 100 MHz Tj = 25 °C typ fT (MHz) 500 0 0 5 10 Fig.6 August 1986 5 IC (A) 15 Philips Semiconductors Product specification VHF power transistor BLY89C APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit) Th = 25 °C f (MHz) VCC (V) PL(W) PS(W) Gp (dB) IC (A) 175 13,5 25 < 6,25 > < 2,64 175 12,5 25 − handbook, full pagewidth 6 C1 L1 50 Ω 70 1,6 + j1,4 210 + j5,5 − − ,, ,, ,, C6a C7 L7 50 Ω L4 C6b T.U.T. C2 YL (mS) typ 75 L5 C3a zi (Ω) > − typ 6,6 η (%) C3b L2 C8 L6 C4 C5 R1 R2 L3 L8 +VCC MGP604 Fig.7 Test circuit for 175 MHz. List of components: C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C2 = C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) C3a = C3b = 47 pF ceramic capacitor (500 V) C4 = 120 pF ceramic capacitor C5 = 100 nF polyester capacitor C6a = C6b = 8,2 pF ceramic capacitor (500 V) C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) L1 = 1 turn enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 × 5 mm L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm L3 = L8 = Ferroxcube choke coil (cat. no. 4312 020 36640) L4 = L5 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor L6 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2 × 5 mm L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2 × 5 mm L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16". R1 = 10 Ω (±10%) carbon resistor R2 = 4,7 Ω (±5%) carbon resistor August 1986 6 Philips Semiconductors Product specification VHF power transistor BLY89C 150 handbook, full pagewidth 72 L8 L3 +VCC C4 R1 L2 C1 C2 C5 C3a L6 C6a L1 C7 L5 L4 R2 C8 L7 C6b C3b rivet MGP808 Fig.8 Component layout and printed-circuit board for 175 MHz test circuit. The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. August 1986 7 Philips Semiconductors Product specification VHF power transistor BLY89C MGP869 50 handbook, halfpage f = 175 MHz typical values PL MGP870 15 handbook, halfpage VCC = 13.5 V VCC = 12.5 V Gp (dB) f = 175 MHz Th = 25 °C typical values VCC = 13.5 V VCC = 12.5 V 150 η (%) Th = 25 °C (W) 10 25 100 Gp Th = 70 °C η 5 50 0 0 0 5 10 PS (W) 0 15 Fig.9 20 PL (W) 0 40 Fig.10 Conditions for R.F. SOAR f = 175 MHz Th = 70 °C Rth mb-h = 0,45 K/W VCCnom = 13,5 V PS = PSnom at VCCnom = 13,5 V and VSWR = 1 MGP871 40 handbook, halfpage PLnom (W) VSWR = 1 30 The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. VSWR = 10 50 20 10 The graph applies to the situation in which the drive (PS/PSnom) increases linearly with supply over-voltage ratio. PS PSnom 0 1 1.1 1.2 VCC VCCnom 1.3 Fig.11 R.F. soar. August 1986 8 Philips Semiconductors Product specification VHF power transistor BLY89C OPERATING NOTE Below 50 MHz a base-emitter resistor of 10 Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. MGP872 20 handbook, halfpage power gain versus frequency (class-B operation) Gp (dB) 15 10 5 0 0 100 200 f (MHz) 300 VCC = 13,5 V PL = 25 W Th = 25 °C typical values Fig.12 MGP873 handbook, halfpage load impedance (parallel components) RL (Ω) versus frequency (class-B operation) ri, xi ri 500 CL (pF) versus frequency (class-B operation) 250 7.5 xi (Ω) MGP874 10 5 handbook, halfpage input impedance (series components) RL ri CL 5 0 0 RL xi CL 2.5 −5 −250 0 0 100 200 f (MHz) 0 300 VCC = 13,5 V PL = 25 W Th = 25 °C typical values 200 VCC = 13,5 V PL = 25 W Th = 25 °C typical values Fig.13 August 1986 100 Fig.14 9 f (MHz) −500 300 Philips Semiconductors Product specification VHF power transistor BLY89C PACKAGE OUTLINE Studded ceramic package; 4 leads SOT120A D A Q c A D1 N1 w1 M A D2 N M W N3 M1 X H detail X b 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 H L M M1 N N1 N3 Q mm 5.97 4.74 5.90 5.48 0.18 0.14 9.73 9.47 8.39 8.12 9.66 9.39 27.44 25.78 9.00 8.00 3.41 2.92 1.66 1.39 12.83 11.17 1.60 0.00 3.31 2.54 4.35 3.98 0.065 0.505 0.063 0.055 0.440 0.000 0.130 0.100 0.171 0.157 inches 0.283 0.248 OUTLINE VERSION 0.232 0.007 0.216 0.004 0.383 0.330 0.380 1.080 0.373 0.320 0.370 1.015 0.354 0.134 0.315 0.115 REFERENCES IEC JEDEC EIAJ w1 0.38 8-32 UNC EUROPEAN PROJECTION 0.015 ISSUE DATE 97-06-28 SOT120A August 1986 W 10 Philips Semiconductors Product specification VHF power transistor BLY89C DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 11