DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band. BLW97 severe load-mismatch conditions. All leads are isolated from the flange. The transistors are supplied in matched hFE groups. The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is made to withstand QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION s.s.b. (class-AB) VCE V IC(ZS) A f MHz PL W Gp dB ηdt % d3 dB d5 dB 28 0,1 1,6 − 28 175 (PEP) > 11,5 > 40 < −30 < −30 PIN CONFIGURATION PINNING - SOT121B. PIN handbook, halfpage 1 2 4 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 3 MLA876 Fig.1 Simplified outline. SOT121B. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification HF power transistor BLW97 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value) VBE = 0 VCESM max. 65 V open base VCEO max. 33 V VEBO max. 4 V average IC(AV) max. 15 A peak value; f > 1 MHz ICM max. 50 A Ptot(d.c.) max. 190 W Ptot(rf) max. 230 W Emitter-base voltage (open collector) Collector current Total d.c. power dissipation at Th = 25°C R.F. power dissipation f > 1 MHz; Th = 25°C Storage temperature Tstg Operating junction temperature Tj MGP703 102 handbook, halfpage −65 to + 150 °C max. MGP704 350 handbook, halfpage Ptot (W) IC (A) 250 Th = 70 °C 10 ΙΙΙ Tmb = 25 °C ΙΙ 150 1 200 °C 1 10 VCE (V) Ι 50 102 0 40 80 Th (°C) 120 I Continuous d.c. operation II Continuous r.f. operation (f > 1 Mhz). III Short-time operation during mismatch; (f > 1 MHz). Fig.2 D.C. SOAR. Fig.3 Power/temperature derating curves. THERMAL RESISTANCE (dissipation = 120 W; Th = 25 °C i.e. Tmb = 49 °C) From junction to mounting base (d.c. dissipation) Rth j-mb(dc) = 0,63 K/W Rth j-mb(rf) = 0,48 K/W Rth mb-h = 0,20 K/W From junction to mounting base (r.f. dissipation) From mounting base to heatsink August 1986 3 Philips Semiconductors Product specification HF power transistor BLW97 CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 50 mA V(BR)CES > 65 V IC = 100 mA; open base V(BR)CEO > 33 V V(BR)EBO > 4 V ICES < 20 mA open base ESBO > 20 mJ RBE = 10 Ω ESBR > 20 mJ typ. 30 Emitter-base breakdown voltage IE = 20 mA; open collector Collector cut-off current VCE = 33 V; VBE = 0 Second breakdown energy; L = 25 mH; f = 50 Hz D.C. current gain(1) IC = 10 A; VCE = 5 V hFE 15 hFE1/hFE2 < 1,2 VCEsat typ. 2,4 V −IE = 10 A; VCB = 28 V fT typ. 230 MHz −IE = 20 A; VCB = 28 V fT typ. 235 MHz Cc typ. 380 pF Cre typ. 235 pF Ccf typ. 4,5 pF D.C. current gain ratio of matched IC = 10 A; VCE = 5 V Collector-emitter saturation to 50 devices(1) voltage(1) IC = 25 A; IB = 5 A Transition frequency at f = 100 MHz(2) Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 28 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 28 V Collector-flange capacitance Notes 1. Measured under pulse conditions: tp = 500 µs. 2. Measured under pulse conditions: tp = 300 µs; δ = 0,02. August 1986 4 Philips Semiconductors Product specification HF power transistor BLW97 MGP705 50 MGP706 260 handbook, halfpage handbook, halfpage VCB = 28 V fT (MHz) VCE = 28 V hFE 220 15 V 40 typ 180 15 V 5V 30 140 typ 5V 20 100 0 10 20 IC (A) 30 0 Fig.4 Tj = 25 °C. 20 Fig.5 Tj = 25 °C; f = 100 MHz; tp = 300 µs. MGP707 1000 −IE (A) 10 MGP708 10 handbook, halfpage handbook, halfpage Cc (pF) IC (A) 800 1 Th = 70 °C 25 °C 600 10−1 typ typ 400 10−2 500 200 0 20 VCB (V) 40 Fig.6 IE = ie = 0; f = 1 MHz; Tj = 25 °C. August 1986 900 VBE (mV) Fig.7 VCE = 28 V. 5 1300 Philips Semiconductors Product specification HF power transistor BLW97 APPLICATION INFORMATION R.F. performance in s.s.b. class-AB operation (linear power amplifier). VCE = 28 V; Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz. OUTPUT POWER Gp ηdt IC d3(1) d5(1) IC(ZS) W dB % A dB dB A > 175 (PEP) > 11,5 typ. 13,0 < 40 typ. 50 < 7,8 −30 < typ. −34 typ. 6,3 −30 0,1 typ. −38 Note 1. The stated intermodulation distortion levels are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. C10 handbook, full pagewidth L4 C1 50 Ω L1 50 Ω C11 R1 T.U.T. C2 L3 C6 C14 C3 C12 C4 C7 R2 L2 C8 C9 R3 C5 L5 VBB VCC Fig.8 Class-AB (s.s.b.) test circuit. August 1986 6 MGP709 C13 Philips Semiconductors Product specification HF power transistor BLW97 List of components: C1 = 47 pF (500 V) multilayer ceramic chip capacitor(1) C2 = 100 pF film dielectric trimmer C3 = 2 × 130 pF (300 V) multilayer ceramic chip capacitors in parallel(1) C4 = 280 pF film dielectric trimmer C5 = 10 nF (50 V) multilayer ceramic chip capacitor 2222 856 13103 C6 = 2 × 180 pF (300 V) multilayer ceramic chip capacitors in parallel(1) C7 = 100 nF (50 V) multilayer ceramic chip capacitor 2222 856 48104 C8 = 10 nF (50 V) multilayer ceramic chip capacitor 2222 856 13103 C9 = 2,2 µF - 63 V solid aluminium electrolytic capacitor C10 = 5 × 82 pF (500 V) multilayer ceramic chip capacitors in parallel(1) C11 = 250 pF air dielectric trimmer C12 = 5 × 33 pF ceramic feed-through capacitors mounted in parallel on a brass plate C13 = 100 pF air dielectric trimmer C14 = 3 × 91 pF (500 V) multilayer ceramic chip capacitors in parallel(1) R1 = 0,7 Ω - 7 W (7 × 4,7 Ω - 1 W carbon resistors in parallel) R2 = 27 Ω - 0,25 W carbon resistor R3 = 4,7 Ω - 0,25 W carbon resistor L1 = 73 nH; 4 turns Cu wire (1,5 mm); int. dia. 7 mm; length 9,4 mm; leads 2 × 5 mm L2 = Ferroxcube wide-band h.f. choke grade 3B (cat. no. 4312 020 36640); 6 leads in parallel L3 = 70,4 nH; 4 turns Cu wire (2 mm); int. dia. 7 mm; length 14,8 mm; leads 2 × 5 mm L4 = 83,5 nH; 4 turns Cu wire (2 mm); int. dia. 8 mm; length 15 mm; leads 2 × 5 mm L5 = Ferroxcube wide-band h.f. choke grade 3 B (cat. no. 4312 020 36640) with 6 leads in parallel Note 1. American Technical Ceramics capacitor or capacitor of same quality. August 1986 7 Philips Semiconductors Product specification HF power transistor BLW97 MGP710 −20 MGP711 16 handbook, halfpage handbook, halfpage d3, d5 ηc GP (dB) d3 80 dt (%) GP (dB) typ 12 d5 60 ηc dt −40 typ 8 40 4 20 −60 −80 0 0 120 PL (W) P.E.P. 240 VCE = 28 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 °C. Fig.9 0 0 120 PL (W) P.E.P. 240 VCE = 28 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 °C. Intermodulation distortion (see note on preceding page). Fig.10 Power gain and double-tone efficiency. RUGGEDNESS The BLW97 is capable of withstanding full load mismatch (VSWR = 50 through all phases) up to 150 W (P.E.P.) or a load mismatch (VSWR = 5 through all phases) up to 175 W (P.E.P.) under the following conditions: MGP712 30 handbook, halfpage GP (dB) VCE = 28 V; f = 28 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W. Figures 11 and 12 t typical curves which are valid for one transistor of a push-pull amplifier in s.s.b. class-AB operation. 20 typ 10 1 10 f (MHz) VCE = 28 V; IC(ZS) = 0,1 A; PL = 175 W(PEP); Th = 25 °C; ZL = 1,55 Ω Fig.11 Power gain. August 1986 8 102 Philips Semiconductors Product specification HF power transistor BLW97 MGP713 4 ri, xi (Ω) ri ri, −xi (Ω) MGP714 1 handbook, halfpage handbook, halfpage xi 0.5 ri −xi 2 typ typ 0 0 1 10 f (MHz) −0.5 25 102 f (MHz) 125 VCE = 28 V; PL = 175 W; Th = 25 °C; class-B operation. VCE = 28 V; IC(ZS) = 0,1 A; PL = 175 W(PEP); Th = 25 °C; ZL = 1,55 Ω Fig.12 Input impedance (series components). MGP715 3 handbook, halfpage Fig.13 Input impedance (series components). 1.5 RL 2 typ MGP716 20 handbook, halfpage XL (Ω) RL (Ω) 1 75 GP (dB) 1.0 15 0.5 10 typ XL 0 25 0 75 f (MHz) 5 125 25 VCE = 28 V; PL = 175 W; Th = 25 °C; class-B operation. f (MHz) VCE = 28 V; PL = 175 W; Th = 25 °C; class-B operation. Fig.14 Load impedance (series components). August 1986 75 Fig.15 Power gain. 9 125 Philips Semiconductors Product specification HF power transistor BLW97 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT121B D A F q C B U1 c H b L 4 α w2 M C 3 A D1 U2 p U3 w1 M A B 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 7.27 6.17 5.82 5.56 0.16 0.10 inches 0.286 0.243 0.229 0.006 0.219 0.004 OUTLINE VERSION D D1 12.86 12.83 12.59 12.57 F H L p Q q U1 U2 U3 w1 w2 2.67 2.41 28.45 25.52 7.93 6.32 3.30 3.05 4.45 3.91 18.42 24.90 24.63 6.48 6.22 12.32 12.06 0.51 1.02 0.175 0.725 0.154 0.98 0.97 0.255 0.245 0.485 0.475 0.02 0.04 0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005 45° 0.312 0.130 0.249 0.120 REFERENCES IEC JEDEC EIAJ SOT121B August 1986 α EUROPEAN PROJECTION ISSUE DATE 97-06-28 10 Philips Semiconductors Product specification HF power transistor BLW97 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 11