TI TAS5101IDAPR

TAS5101
SLES039 – JUNE 2002
TRUE DIGITAL STEREO AUDIO AMPLIFIER
WITH PWM STEREO POWER OUTPUT STAGE
FEATURES
D 2 × 15 W High-Quality Digital Amplifier Power
D
D
D
D
D
D
D
D
D
Stage
Single-Ended Output
>95-dB Dynamic Range (TDAA System)
THD+N < 0.1% (1 kHz, 1 W to 15 W RMS
Into 4 Ω)
Power Efficiency > 90% Into 4-Ω to 8-Ω Load
Low Profile, SMD 32-Pin PowerPAD Package
Requires No Heat-Sink When Using
Recommended Layout
2 × 15-W RMS Continuous Power Into 4 Ω
Self-Protecting Design
3.3-V Digital Interface
EMI Compliant When Used With
Recommended System Design
APPLICATIONS
D Digital TV Audio Amplifier
D Car Audio Amplifiers and Head Units
D Internet Music Appliance
D Mini/Micro Component Systems
DESCRIPTION
The TAS5101 is a high-performance true digital stereo
audio amplifier (TDAA) Power Stage, designed to drive
2 × 15 watts per channel. The TAS5101 incorporates
TI’s equibitt technology and is used in conjunction with
a Digital Audio PWM processor (TAS50xx) to deliver
high-power, true digital audio amplification. The
efficiency of this digital amplifier can be greater than
90%, reducing the size of both the power supplies and
heat sinks needed. The TAS5101 accepts a stereo
PWM 3.3V input and controls the switching of an
internal CMOS H-bridge.
When used with the TAS50xx PWM Processor, system
performance of less than 0.09% THD is attainable.
Over-current protection, over-temperature, and
under-voltage protections are built into the TAS5101,
safeguarding the H-bridge and speakers against output
shorts, over-voltage conditions, and other fault
conditions that could damage the system.
TYPICAL TDAA STEREO AUDIO SYSTEM
L-C
Filter
Digital Audio
• TAS3001
• TAS3103
• DSP
• DIR1703
• 1394
•
•
•
•
•
Volume
EQ
DRC
Bass
Treble
TAS5010
TAS5101
L-C
Filter
• Serial Audio Input Port
• Internal PLL
• PCM–PWM Modulator
• 2 × 15 W Single-Ended
H-Bridge Power Devices
NOTE:
The TAS5000 in NOT recommended for use with the TAS5101
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD and Equibit are trademarks of Texas Instruments.
Copyright  2002, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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TAS5101
SLES039 – JUNE 2002
terminal assignments
The TAS5101 is offered in a thermally enhanced 32-pin HTSSOP surface-mount package (DAP).
DAP PACKAGE
(TOP VIEW)
PWM_AP
PWM_AM
ERR1
ERR0
SHUTDOWN
DVDD
DVSS
DVSS
DVSS
VRFILT
BIAS_A
BIAS_B
HiZ
RESET
PWM_BM
PWM_BP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PVDDA2
LDROUTA
BOOTSTRAPA
PVDDA1
PVDDA1
OUTPUTA
OUTPUTA
PVSS
PVSS
OUTPUTB
OUTPUTB
PVDDB1
PVDDB1
BOOTSTRAPB
LDROUTB
PVDDB2
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
ordering information
TA
0°C to 70°C
PACKAGE
TAPE and Reel
TAS5101DAP
TAS5101DAPR
–40°C to 85°C
TAS5101IDAP
TAS5101IDAPR
references
TAS5010 Digital Audio PWM Processor Data Manual – TI Literature Number SLAS328
System Design Considerations for True Digital Audio Power Amplifiers – TI Literature Number SLAA117
Digital Audio Measurements – TI Literature Number SLAA114
PowerPAD Thermally Enhanced Package – TI Literature Number SLMA002
TAS5101_SE Application Report – TI Literature Number SLEA001
suggested system block diagrams
See application note SLAA117 for more details.
Digital Audio
• TAS3001
• TAS3103
• DSP
• DIR1703
• 1394
• Digital Parametric EQ
• Volume
• DRC
• Bass
• Treble
L-C
Filter
TAS5010
TAS5101
L-C
Filter
• Serial Audio Input Port
• Internal PLL
• 2 × 1/2 H-Bridge
Figure 1. System #1: Stereo Configuration With TAS3001 Digital Audio Processor
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TAS5101
SLES039 – JUNE 2002
PVDDA1
PVDDA1
BOOTSTRAPA
PVDDA2
LDROUTA
functional block diagram
1/2 H-Bridge
LDR
OUTPUTA
PWM_AP
PWM_AM
DIFF
RCVR
OUTPUTA
Boot Strap
Gate Drive
PVSS
BIAS_A
HiZ
RESET
SHUTDOWN
ERR1
ERR0
Control/Sense
Circuit
Bandgap
Reference
LDROUTB
PVDDB2
VRFILT
BOOTSTRAPB
PVDDB1
1/2 H-Bridge
BIAS_B
PVDDB1
LDR
DIFF
RCVR
OUTPUTB
Boot Strap
Gate Drive
OUTPUTB
PVSS
DVSS
PWM_BP
DVDD
PWM_BM
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TAS5101
SLES039 – JUNE 2002
Terminal Functions
TERMINAL
NAME
NO.
I/O
DESCRIPTION
BIAS_A
11
I
Connect external resistor to DVSS. See application note SLAA117
BIAS_B
12
I
Connect external resistor to DVSS. See application note SLAA117
BOOTSTRAPA
30
O
Bootstrap capacitor pin for H-bridge A
BOOTSTRAPB
19
O
Bootstrap capacitor pin for H-bridge B
DVDD
6
I
3.3-V digital voltage supply for logic
DVSS
7, 8, 9
I
Digital ground for logic is internally connected to PVSS. All three pins must be tied together but not
connected externally to PVSS. See Figure 5.
ERR1
3
O
Error/warning report indicator. This output is open drain with internal pullup resistor.
ERR0
4
O
Error/warning report indicator. This output is open drain with internal pullup resistor.
LDROUTA
31
O
Low voltage drop-out regulator output A (not to be used to supply current to external circuitry)
LDROUTB
18
O
Low voltage drop-out regulator output B (not to be used to supply current to external circuitry)
OUTPUTA
26, 27
O
H-bridge output A
OUTPUTB
22, 23
O
H-bridge output B
PVDDA1
28, 29
I
High voltage power supply, H-bridge A
PVDDA2
32
I
High voltage power supply for low-dropout voltage regulator A-side
PVDDB1
20, 21
I
High voltage power supply, H-bridge B
PVDDB2
17
I
High voltage power supply for low-dropout voltage regulator B-side
PVSS
24, 25
I
High voltage power supply ground
HiZ
13
I
HiZ = 0, when asserted, the H-bridge output is set to high-impedance mode
PWM_AP
1
I
PWM input A(+)
PWM_AM
2
I
PWM input A(–)
PWM_BP
16
I
PWM input B(+)
PWM_BM
15
I
PWM input B(–)
RESET
14
I
Reset and mute mode = 0, normal mode = 1, when in reset mode, H-bridge MOSFETs are in low-low
output state. Asserting the RESET signal low causes all fault conditions to be cleared.
SHUTDOWN
5
O
Device is in shutdown due to fault condition, normal mode = 1, shutdown = 0. The shutdown
condition can be cleared by asserting the RESET signal. This output is open drain with internal
pullup resistor.
VRFILT
10
O
A filter capacitor should be added between VRFILT and DVSS pins.
NOTE: The four PWM inputs: PWM_AP, PWM_AM, PWM_BP, and PWM_BM must always be connected to the TAS5010 output pins, and never
left floating. Floating PWM input pins will cause an illegal PWM input state signal to be asserted.
Dual pins: OUTPUTA, OUTPUTB, PVDDA1 and PVDDB1 must have both pins connected externally to the same point on the circuit board,
respectively. Both PVSS pins must also be connected together externally. These multiple pins are for the high current DMOS output
devices. Failure to connect all the multiple pins to the same respective node will result in excessive current flow in the internal bond wires
and can cause the device to fail. All electrical characteristics are specified and measured with all of the multiple pins connected to the same
node, respectively.
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TAS5101
SLES039 – JUNE 2002
functional description
PWM H-bridge state control
The digital interface control signals consists of PWM_AP, PWM_AM, PWM_BP, and PWM_BM. These signals
are a complementary differential signal format for the A-side H-bridge and the B-side H-bridge.
bootstrapped gate drive
The TAS5101 includes 2 dedicated bootstrapped power supplies. A bootstrap capacitor is connected between
the individual bootstrap pin and the associated output as described in the application note SLAA117. For
example, a capacitor will be connected between the BOOTSTRAPA pin and OUTPUTA pin, and another
capacitor will be connected between the BOOTSTRAPB pin and the OUTPUTB pin. The bootstrap power
supply minimizes the number of high voltage power supply levels externally supplied to the system while
providing a low noise supply level for driving the high-side N-channel DMOS transistors. See application note
SLAA117 for details.
low-dropout voltage regulator
Two on-chip low-dropout voltage regulators (LDO) are provided to minimize the number of external power
supplies needed for the system. These voltage regulators are for internal circuits only and cannot be used for
external circuitry. Each LDO is dedicated to an H-bridge and its gate driver. An LDO output capacitor is
connected between the individual LDO output pin and the associated output return as described in the
application note SLAA117. For example, a capacitor will be connected between the LDROUTA pin and PVSS
pin, and another capacitor will be connected between the LDROUTB pin and PVSS pin. This capacitor is usually
0.1 µF.
high-current H-bridge output stage
The positive outputs of the H-bridge are the two OUTPUTA pins. The negative outputs of the H-bridge are the
two OUTPUTB pins. The logic for the input command to H-bridge outputs is described in the H-bridge output
mapping section below. When the TAS5101 is in the normal mode, as seen in the H-bridge output mapping
tables, the outputs are decoded from the inputs. However, the TAS5101 is immediately shut down if any of the
following error conditions occur: over-current, over-temperature, low regulator output voltage, or an illegal PWM
input state is applied. For these conditions, the outputs are set to the appropriate disabled state as specified
in the H-bridge output mapping section, and the SHUTDOWN pin is set low.
H-bridge output mapping
The A-side and B-side H-bridge output is designed to the following truth table:
INPUTS
OUTPUTS
DESCRIPTION
RESET
HiZ
PWM_AP/BP
PWM_AM/BM
SHUTDOWN
X
X
X
X
0
OUTPUTA/B
0 or Hi-Z†
X
0
X
X
1
Hi-Z
High Impedance
0
1
X
X
1
0
Low
1
1
0
0
0
0
Low
1
1
0
1
1
0
Normal
1
1
1
0
1
1
Normal
1
1
1
1
0
0
† Output is 0 for low voltage, over temperature, and illegal input. Hi-Z is for over current.
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Shutdown
Low
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TAS5101
SLES039 – JUNE 2002
control/sense circuitry
The control/sense circuitry consists of the following 3.3-V logic level pins: HiZ, RESET, ERR0, ERR1, and
SHUTDOWN. The active-low HiZ input pin powers down all internal circuitry and forces the H-bridge outputs
to the Hi-Z state. When the HiZ pin is low, the open drain ERR0, ERR1, and SHUTDOWN pins are also disabled
so that their outputs can be pulled high. The active-low RESET input pin forces the H-bridge outputs to the
low-low state and resets the over-current shutdown latch. The HiZ pin overrides the RESET pin. The ERR0,
ERR1, and SHUTDOWN outputs indicate the following conditions in the TAS5101 as shown in the table below.
These three outputs are open-drain connections with internal pullup resistors so that wire-ORed connections
can be made by the user with other external control devices. The short circuit protect error condition will latch
the TAS5101 in this shutdown state and force the H-bridge outputs to the Hi-Z state until the device is reset by
means of the RESET pin. The illegal PWM input state, over-temperature, and low regulator voltage error
conditions will not latch the device in the shutdown condition. Instead the H-bridge outputs are forced to the
low-low state and the TAS5101 will return to normal operation as soon as the error condition ends. Loss of
clocking PWM signal is also considered an illegal PWM input state.
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SHUTDOWN
ERR1
ERR0
FUNCTION
0
0
0
Illegal PWM input state
Low
Low
0
0
1
Short circuit protect (latch)
Hi-Z
Hi-Z
0
1
0
Over temperature protect
Low
Low
0
1
1
Low regulator voltage protect
Low
Low
1
0
0
Reserved
—
—
1
0
1
Reserved
—
—
1
1
0
High temperature – warning
Normal
Normal
1
1
1
Normal operation
Normal
Normal
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OUTPUTA
OUTPUTB
TAS5101
SLES039 – JUNE 2002
device operation
power sequences
system power-up/power-down sequencing
The recommended power-up/power-down sequence is shown in Figure 3. For proper operation the RESET
signal should be kept LOW when both DVDD and output power (PVDDA1, PVDDA2, PVDDB1, and PVDDB2)
are being applied. The RESET signal should remain LOW for at least 1 ms after output power is applied.
DVDD
> 1 ms
> 1 ms
PVDDA1
PVDDA2
PVDDB1
PVDDB2
> 100 ms
RESET/HiZ
NOTE: This power-up/power-down sequence will ensure that there are no device reliability issues. However, audio artifacts during power cycling
may occur (see TAS5101_SE Application Report (SLEA001) for more information).
Figure 2. Power-Up/Power-Down Sequence
RESET function
The device is put into a reset condition when the (active low) RESET signal is asserted. While in the reset state,
the input H-bridge control signals consisting of PWM_AP, PWM_AM, PWM_BP, and PWM_BM are ignored, and
the H-bridge MOSFETs are placed in a state where OUTPUTA and OUTPUTB are both low. Asserting the
RESET signal low also causes the short circuit protection latch to be reset. The RESET and HiZ signals are
normally connected to the VALID signal from the TAS5010, when used in a single-ended configuration.
HiZ function
The HiZ function places the output MOSFETs in a high-impedance state when this function is asserted by
placing pin 13 at logic low. This function is usually used in conjunction with the RESET function during power
on and off to reduce or eliminate “pops and clicks” associated with powering the amplifier.
reinitialization sequence
Proper initial conditions for this device include asserting the RESET and HiZ signals until the reset operation
has completed (1 ms). Additionally, when using this device with the TAS5010 controller, this function can be
accomplished by asserting the reset pin on the TAS5010 during the reset sequence (see Figure 3).
audio application considerations
power supply decoupling
Power supply decoupling and layout optimization information should be obtained by following the detailed
information in the application note SLEA005.
optimal power transfer for H-bridge
The TAS5101 is a power H-bridge that is designed to deliver 2 × 15 W/rms into loads of 4 Ω in a single-ended
configuration. Rather than requiring the usual heatsink, the package is designed to deliver this wattage by
careful layout as described in the application note SLAA117. Careful attention must be given to the value of the
high-voltage power supply level for a given load resistance. See recommended operating conditions.
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TAS5101
SLES039 – JUNE 2002
audio application considerations (continued)
reconstruction output filter
An output reconstruction filter is required between the H-bridge outputs and the loudspeaker load. This second
order low-pass filter passes the audio information to the loudspeaker, while filtering out the high frequency
out-of-band information contained in the H-bridge output PWM pulses. The values of the L and C components
selected are dependent on the loudspeaker load impedance. See application note SLAA117.
fault indicator usage
The TAS5101 is a self-protecting device that provides device fault reporting, including over-temperature protect,
under-voltage lockout (low-regulator voltage), and short circuit protection. The short circuit protection protects
against short circuits that may occur at the loudspeaker load when configured according to the application note
SLAA117. The TAS5101 is not recommended for driving loads less than 4 Ω, since the internal current limit
protection might be activated.
An under-voltage lockout signal occurs when an insufficient voltage level is present on the LDROUTA or
LDROUTB pins. During this condition gate drive levels are not sufficient for driving the power MOSFETs. Normal
operation is resumed when the minimum proper LDROUTA or LDROUTB level is obtained, and the low regulator
voltage protect signal is de-asserted. See the control/sense circuitry section for error and warning conditions.
A high temperature warning signal is asserted on pin ERR0 when the device temperature exceeds 125°C
typical.
If the internal device temperature exceeds 150°C typical, the over temperature protect signal is asserted and
the TAS5101 is shut down. The device will re-enable once the temperature drops to 125°C typical. See the
control/sense circuitry section for error and warning conditions.
Detection of an illegal PWM input state or the loss of a clocking PWM input signal will cause an illegal PWM input
state signal to be asserted on the ERR1and ERR0 pins and will set the SHUTDOWN pin to the low state.
absolute maximum ratings over operating free-air temperature (unless otherwise noted)†
DC supply voltage range: DVDD to DVSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 5.5 V
PWM_AP, PWM_AM, PWM_BP, PWM_BM . . . . . . . . . . . . . . . . . –0.3 V to DVDD + 0.3 V
RESET, HiZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to DVDD + 0.3 V
PVDDA1 to PVSS, PVDDB1 to PVSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 28 V
PVDDA2 to PVSS, PVDDB2 to PVSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 28 V
Output DMOS drain-to-source breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 V
Operating junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 150°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
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TAS5101
SLES039 – JUNE 2002
recommended operating conditions (nominal output power = 2 × 15 W (RMS), TA = 25°C)
thermal data†
PARAMETER
MIN
NOM
MAX
UNIT
Shutdown junction temperature, TJ(SD)
150
°C
Warning junction temperature, TJ(W)
125
°C
Commercial
Operating ambient temperature
temperature, TA
Industrial
0
25
70
–40
25
85
°C
Thermal resistance junction-to-ambient, θja
2 oz. trace and copper pad with solder
23.5
°C/W
Thermal resistance junction-to-case, θjc
2 oz. trace and copper pad without solder
0.32
°C/W
Thermal resistance junction-to-ambient, θja
2 oz. trace and copper pad without solder
44.3
°C/W
† One of the most influential components on the thermal performance of a package is board design. In order to take full advantage of the heat
dissipating abilities of the PowerPAD packages, a board must be used that acts similar to a heat sink and allows for the use of the exposed (and
solderable), deep downset pad. See Appendix A of the PowerPAD Thermally Enhanced Package application note, TI literature number SLMA002
and the Thermal Design of the PowerPad PCB Layout section of the System Design Considerations for True Digital Audio Power Amplifiers
application note, TI literature number SLAA117.
RL = 4 Ω to 8 Ω
Digital
Supply
y voltage
g
Regulator
PARAMETER
MIN
NOM
MAX
DVDD to DVSS
3
3.3
3.6
PVDDA2 to PVSS
16.5
26.5
28
PVDDB2 to PVSS
16.5
26.5
28
PVDDA2 to PVSS}
10.5
16.5
PVDDB2 to PVSS}
10.5
16.5
UNIT
V
V
† If PVDD is greater than 26.5 V, 15 Watts per channel is still the maximum specified continuous output power.
‡ If using a PVVD power supply less than 16.5 V, connect LDROUTA to PVDDA2 and connect LDROUTB to PVDDB2. Under this condition
H-Bridge forward on-state resistance is increased. This will increase internal power dissipation. Maximum output power may need to be reduced
to meet thermal conditions.
maximum available power at common load impedance for DAP package unclipped (0 dB) level
LOAD IMPEDANCE
(Ω)
APPROXIMATE MAX OUTPUT POWER
(W)
15
THD+N AT MAX POWER AND 1 kHz INPUT†
4
PVDAA1/PVDDB1
(VDC)
26.5
6
27
12.85
< 0.09%
8
27
9.64
< 0.09%
< 0.1%
† Dependent on board design and component selection.
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TAS5101
SLES039 – JUNE 2002
static digital specifications
RESET, HiZ, PWM_AP, PWM_AM, PWM_BP, PWM_BM, TA = 25°C, DVDD = 3.3 V
PARAMETERS
MIN
High-level input voltage, VIH
MAX
2
Low-level input voltage, VIL
Input leakage current
UNIT
V
0.8
V
10
µA
–10
ERR0, ERR1, SHUTDOWN, (open drain with internal pullup resistor) TA = 25°C, DVDD = 3.3 V)
PARAMETERS
MIN
Internal pullup resistors from SHUTDOWN, ERR0, ERR1 to DVDD
MAX
15
Low-level output voltage (IO = 4 mA), VOL
UNIT
kΩ
0.4
V
TAS5010/TAS5101 system performance measured at the speaker terminals
See the TI Literature Number SLAA117 for TAS5010/TAS5101 system performance.
electrical characteristics
supply, TA = 25°C (Fswitching = 384 kHz, OUTPUTA and OUTPUTB not connected, DVDD = 3.3 V,
PVDDA1 = 26.5 V, PVDDB1 = 26.5 V, PVDDA2 = 26.5 V, PVDDB2 = 26.5 V, 50% input duty cycle)
PARAMETER
Supply current
TYP
MAX
UNIT
DVDD
Operating
2
mA
PVDDA1+PVDDB1+
PVDDA2+PVDDB2
Operating†
20
mA
† 13-kΩ resistor from BIAS_A (pin 11) to DVSS and 13-kΩ resistor from BIAS_B (pin 12) to DVSS.
H-Bridge transistors, PVDDA2 = PVDDB2 = 22 V, DVDD = 3.3 V, TA = 25°C (unless otherwise noted)
PARAMETER
Drain-to-source breakdown voltage
TEST CONDITIONS
Forward on-state resistance, low-side drivers
OUTPUTA and OUTPUTB to PVSS
ID = 1 mA,
HiZ = 0,
Hi-Z state
ISINK = 2.5 A,
PWM_AP = PWM_BP = 0,
See Notes 2, 3, and 4, PWM_AM = PWM_BM = 1
Forward on-state resistance, high-side drivers
PVDDA1 to OUTPUTA, PVDDB1 to OUTPUTB
ISOURCE = 2.5 A,
See Notes 2, 3, and 5,
MIN
TYP
MAX
28
PWM_AP = PWM_BP = 1,
PWM_AM = PWM_BM = 0
UNIT
V
0.2
Ω
0.2
Ω
On-state resistance matching low side
98%
On-state resistance matching high side
98%
NOTES: 1. Test time should be < 1 ms to avoid temperature change.
2. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
3. Connect PVDDA2 and PVDDB2 to 26.5-V power supply with respect to PVSS. LDROUTA, LDROUTB, BOOTSTRAPA, and
BOOTSTRAPB pins open.
4. Connect PVDDA2 to 26.5-V power supply with respect to PVSS. LDROUTA, LDROUTB, BOOTSTRAPA and BOOTSTRAPB
capacitors are connected respectively. Clock PWM inputs to allow bootstrap capacitors to charge. 93–99% modulation must be used
on PWM_AP, PWM_AM, PWM_BP, and PWM_BM inputs to prevent the activity detector from shutting down the device during this
measurement. Note that Fswitching = 384 kHz.
electrical characteristics, voltage regulator, TA = 25°C (unless otherwise noted)
PARAMETER
Output voltage (LDROUTA, LDROUTB)
TEST CONDITIONS
IO = 5 mA,
See Note 6,
PVDDA2 = PVDDB2 = 18 V to 28 V,
DVDD = 3.3 V
MIN
TYP
MAX
14.5
15.3
16
UNIT
V
NOTE 5: These voltage regulators are for internal gate drive circuits only and are not to be used under any circumstances to supply current to
external circuity.
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TAS5101
SLES039 – JUNE 2002
THERMAL INFORMATION
The thermally enhanced DAP package is based on the 32-pin HTSSOP, but includes a thermal pad (see
Figure 4) to provide an effective thermal contact between the IC and the PWB.
Traditionally, surface mount and power have been mutually exclusive terms. A variety of scaled-down TO-220
type packages have leads formed as gull wings to make them applicable for surface-mount applications. These
packages, however, have two shortcomings: they do not address the very low profile requirements (<2 mm) of
many of today’s advanced systems, and they do not offer a terminal-count high enough to accommodate
increasing integration. On the other hand, traditional low-power surface-mount packages require
power-dissipation derating that severely limits the usable range of many high-performance analog circuits.
The PowerPAD package (thermally enhanced HTSSOP) combines fine-pitch surface-mount technology with
thermal performance comparable to much larger power packages.
The PowerPAD package is designed to optimize the heat transfer to the PWB. Because of the very small size
and limited mass of a HTSSOP package, thermal enhancement is achieved by improving the thermal
conduction paths that remove heat from the component. The thermal pad is formed using a patented lead-frame
design and manufacturing technique to provide a direct connection to the heat-generating IC. When this pad
is soldered or otherwise thermally coupled to an external heat dissipater, high power dissipation in the ultrathin,
fine-pitch, surface-mount package can be reliably achieved.
DIE
Thermal
Pad
Side View (a)
DIE
End View (b)
Bottom View (c)
Figure 3. Views of Thermally Enhanced DAP Package
www.ti.com
11
TAS5101
SLES039 – JUNE 2002
APPLICATION INFORMATION
TAS5010
C11
TAS5101
1
PWM_BP
2
PWM_BM
3
RESET
Error
Reporting
4
5
VALID_L
6
PWM_AM
7
C10
8
PWM_AP
9
C9
10
R1
R2
11
12
PWM_AP
PVDDA2
PWM_AM
LDROUTA
ERR1
BOOTSTRAPA
ERR0
PVDDA1
SHUTDOWN
DVDD
DVSS
PVDDA1
OUTPUTA
OUTPUTA
PVSS
DVSS
PVSS
VRFILT
OUTPUTB
BIAS_A
OUTPUTB
BIAS_B
PVDDB1
HiZ
PVDDB1
14
RESET
26.5 V
31
30
C8
29
C7
Snubber
Circuit
28
27
L1
26
C1
25
DVSS
13
32
BOOTSTRAPB
15
PWM_BM
LDROUTB
PWM_BP
PVDDB2
16
24
C2
23
22
L2
21
Snubber
Circuit
20
19
C5
C6
18
17
26.5 V
26.5 V
C3
R3
C4
NOTE: C1, C2 = 1.0 µF
C3, C4 = 470 µF
C5, C8 = 0.033 µF
C6, C7 = 0.1 µF
C9, C10 = 0.1 µF
C11, C12 = 0.1 µF
R1, R2 = 13 kΩ
R3, R4 =4.7 kΩ
L1, L2 = 10 µH
Figure 4. Typical TAS5101 Application (One Channel Shown)
See the application note, TI literature number SLEA001 for detailed application information.
12
www.ti.com
R4
TAS5101
SLES039 – JUNE 2002
MECHANICAL DATA
DAP (R-PDSO-G**)
PowerPAD PLASTIC SMALL-OUTLINE PACKAGE
38 PINS SHOWN
0,30
0,19
0,65
38
0,13 M
20
Thermal Pad
(see Note D)
6,20
NOM
8,40
7,80
0,15 NOM
Gage Plane
1
19
0,25
A
0°–ā8°
0,75
0,50
Seating Plane
0,15
0,05
1,20 MAX
PINS **
0,10
28
30
32
38
A MAX
9,80
11,10
11,10
12,60
A MIN
9,60
10,90
10,90
12,40
DIM
4073257/A 07/97
NOTES: A.
B.
C.
D.
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion.
The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane. This pad is electrically
and thermally connected to the backside of the die and possibly selected leads. Thermal pad size is 3,86 mm X 3,91 mm for the
32-pin TAS5101 device.
E. Falls within JEDEC MO-153
PowerPAD is a trademark of Texas Instruments.
www.ti.com
13
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