S DM8401 S amHop Microelectronics C orp. Augus t , 2002 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 6A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) TYP R DS (ON) ( m W ) V DS S ID -30V -4.5A 18.5 @ V G S = 10V TYP 38.5 @ V G S = -10V 25 @ V G S = 4.5V 57.5 @ V G S = -4.5V D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 S O-8 1 4 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol P arameter N-C hannel P-C hannel Unit Drain-S ource Voltage V DS 30 -30 V Gate-S ource Voltage V GS 20 20 V Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed ID 6.0 4.5 A IDM 18.0 15 A Drain-S ource Diode Forward C urrent a IS 1.7 -1.7 A Maximum P ower Dissipation a PD 2.0 T J , T S TG -55 to 150 Operating Junction and S torage Temperature R ange W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 62.5 C /W S DM8401 N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V 1 Gate-Body Leakage IGS S V GS = 16V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS OFF CHAR ACTE R IS TICS 30 V uA ON CHAR ACTE R IS TICS b Forward Transconductance 1.5 3 V GS =10V, ID = 9A 18.5 21 m ohm V GS =4.5V, ID= 7A 25 32 m ohm V DS = 10V, V GS = 10V V DS = 10V, ID = 20A 1 V A 40 16 S 950 PF 420 PF 110 PF 7 ns 30 ns 14 ns 54 ns DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =15V, V GS = 0V f =1.0MH Z c tD(ON) V DD = 15V, ID = 1A, V GS = 10V, R GE N = 6 tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DS =15V, ID =9A,V GS =10V 25.2 35 nC V DS =15V, ID =9A,V GS =4.5V 12.1 14.6 nC 5.12 nC 4.8 nC V DS =15V, ID = 9A, V GS =10V 2 S DM8401 P-Channel ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted) Parameter Condition S ymbol Min Typ C Max Unit OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA Zero Gate Voltage Drain Current IDS S V DS = -24V, V GS = 0V -1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS -30 V mA ON CHAR ACTE R IS TICS b Forward Transconductance -1.5 -3 V GS =-10V, ID = -4.5A 38.5 53 m ohm V GS =-4.5V, ID = -3.6A 57.5 95 m ohm V DS = -5V, V GS = -10V V DS = -15V, ID = - 4.5A -1 -20 5 V A 10 S 860 PF 457 PF 140 PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =-15V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd 9 20 ns 10 40 ns 37 90 ns 23 110 ns V DS =-15V,ID=-4.9A,V GS =-10V 15 20 nC V DS =-15V,ID=-4.9A,V GS =-4.5V 8 10 nC V DS =-15V, ID = - 4.9A, V GS =-10V 3 nC 4 nC V D = -15V, R L = 15 ID = -1A, V GE N = -10V, R GE N = 6 3 S DM8401 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unles s otherwis e noted) Parameter C Min Typ Max Unit Condition S ymbol DR AIN-SOUR CE DIODE CHAR ACTER ISTICS b Diode Forward Voltage 0.77 1.2 -0.80 -1.2 V G S = 0V, Is =1.7A N-C h V G S = 0V, Is =-1.7A P -C h VSD Notes a.S urface Mounted on FR 4 Board, t ＜10sec. b.Pulse Test:Pulse Width ＜ 300μs, Duty Cycle ＜ 2%. c.Guaranteed by design, not subject to production testing. N-C hannel 25 25 V G S =10,9,8,7,6,5,V 20 I D , Drain C urrent (A) ID , Drain C urrent(A) 20 15 10 V G S =4V 5 25 C 15 10 T j=125 C 5 -55 C 0 0 0.5 1 1.5 2 2.5 0 0.0 3 V DS , Drain-to-S ource Voltage (V ) R DS (ON) , On-R es is tance(Ohms ) C , C apacitance (pF ) 2500 2000 1500 C is s 1000 C os s C rs s 0 5 10 15 20 25 3.0 4.0 5.0 6.0 F igure 2. Tr ansfer C har acter istics 3000 0 2.0 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C har acter istics 500 1.0 30 0.030 V G S =10V 0.025 0.020 T j=125 C 0.015 25 C 0.010 -55 C 0.005 0 0 5 10 15 20 V DS , Drain-to S ource Voltage (V ) I D , Drain C urrent(A) F igure 3. C apacitance F igure 4. On-R esistance Var iation with Dr ain C ur rent and Temper ature 4 V 5 S DM8401 B V DS S , Normalized Drain-S ource B reakdown V oltage 1.09 V DS =V GS I D =250uA 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 1.15 1.10 ID=-250uA 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 6. B r eak down V oltage V ar iation with T emper atur e F igur e 5. G ate T hr eshold V ar iation with T emper atur e 25 40.0 20 Is , S ource-drain current (A) gF S , T rans conductance (S ) 5 V th, Normalized G ate-S ource T hres hold V oltage N-C hannel 15 10 5 V DS =15V 0 0 5 10 15 10.0 1.0 20 0.4 I DS , Drain-S ource C urrent (A) 0.6 0.8 1.0 1.2 1.4 V S D , B ody Diode F orward V oltage (V ) F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent with Dr ain C ur r ent 5 S DM8401 P-C hannel 20 25 6V -V G S =10,9,8,7V -I D , Drain C urrent (A) -I D , Drain C urrent (A) 20 5V 15 10 4V 5 0 3V 0.5 1.0 1.5 2.0 2.5 8 4 3.0 0 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C har acter istics F igure 2. Tr ansfer C har acter istics R DS (ON) , On-R es is tance(Ohms ) (Normalized) 1250 C , C apacitance (pF ) T j=125 C 12 0 0 1500 C is s 1000 750 C os s 500 250 0 -55 C 25 C 16 C rs s 0 5 10 15 20 25 30 1.8 1.6 V G S =-10V I D =-4.9A 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 T j, J unction T emperature ( C ) -V DS , Drain-to S ource Voltage (V ) F igure 4. On-R esistance Var iation with Temper ature F igure 3. C apacitance 6 S DM8401 B V DS S , Normalized Drain-S ource B reakdown V oltage 1.09 V DS =V GS I D =-250uA 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 1.15 5 1.10 I D =250μA 1.05 1.00 0.95 0.90 0.85 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation with T emper atur e F igur e 6. B r eak down V oltage V ar iation with T emper atur e 15 20.0 12 10.0 V GS =0V -Is , S ource-drain current (A) gF S , T rans conductance (S ) V th, Normalized G ate-S ource T hres hold V oltage P-C hannel 9 6 3 V DS =-15V 1.0 0 0 5 10 15 20 0.4 -I DS , Drain-S ource C urrent (A) 0.6 0.8 1.0 1.2 1.4 -V S D , B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 7 S DM8401 40 10 8 I D , Drain C urrent (A) V DS =15V I D =9A 6 4 2 10 R (O DS N) L im 0 4 8 12 16 20 24 it 10m 100 11 s ms 1s DC V G S =10V S ingle P ulse T A =25 C 0.1 0.03 0 0.1 28 32 Q g, T otal G ate C harge (nC ) 1 10 30 50 V DS , Drain-S ource V oltage (V ) F igur e 10. M aximum Safe O per ating A r ea F igur e 9. G ate C har ge P-C hannel 50 10 V DS =-15V I D =-4.5A 8 -I D , Drain C urrent (A) V G S , G ate to S ource V oltage (V ) 5 V G S , G ate to S ource V oltage (V ) N-C hannel 6 4 2 0 10 R 3 6 9 12 15 18 Q g, T otal G ate C harge (nC ) N) L im it 10m 11 s ms 1s DC 0.1 V G S =-10V S ingle P ulse T A =25 C 0.1 21 24 (O 100 0.03 0 DS 1 10 50 -V DS , B ody Diode F orward V oltage (V ) F igur e 10. M aximum Safe O per ating A r ea F igur e 9. G ate C har ge 8 S DM8401 V DD ton RL V IN D td(off) V OUT V OUT 10% 5 tf 90% 90% VG S R GE N toff tr td(on) INVE R TE D 10% G 90% V IN S 50% 50% 10% P ULS E WIDTH F igur e 12. Switching W avefor ms F igur e 11. Switching T est C ir cuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 Duty C ycle=0.5 0.2 P DM 0.1 0.1 t1 0.05 1. 2. 3. 4. 0.02 S ingle P uls e 0.01 10 -4 10 -3 10 -2 10 -1 1 S quare Wave P uls e Duration (s ec) F igur e 13. Nor malized T her mal T r ansient I mpedance C ur ve 9 t2 R θJ A (t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A (t) Duty C ycle, D=t1/t2 10 100