S T M6920A S amHop Microelectronics C orp. Apr,08.2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 35 @ V G S = 10V 40V 5A S urface Mount P ackage. 62 @ V G S = 4.5V D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 S O-8 1 4 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol Limit Unit Drain-S ource Voltage V DS 40 V Gate-S ource Voltage V GS 20 V 5 4.2 A A IDM 20 A IS 1.7 A P arameter 25 C a Drain C urrent-C ontinuous @ Ta -P ulsed ID 70 C b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Ta= 25 C PD Ta=70 C Operating Junction and S torage Temperature R ange T J , T S TG 2 1.44 W -55 to 150 C 62.5 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 S T M6920A N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 32V, V GS = 0V 1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS OFF CHAR ACTE R IS TICS 40 V uA ON CHAR ACTE R IS TICS b Forward Transconductance 1.8 3 V GS =10V, ID = 6A 24 35 m ohm V GS =4.5V, ID= 5A 45 62 m ohm V DS = 5V, V GS = 10V 1 15 V A 10 S 759 PF 92 PF 70 PF 9.2 ns 21 ns 15.5 ns 4.4 ns V DS =20V, ID =6A,V GS =10V 15.9 nC V DS =20V, ID =6A,V GS =4.5V 7.6 nC 2.2 nC nC V DS = 5V, ID = 6A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =25V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 20V ID = 1 A V GS = 10V R GE N = 3.3 ohm V DS =20V, ID = 6 A V GS =10V 2 4.8 S T M6920A E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage V GS = 0V, Is =1.7A VSD 0.8 1.2 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 25 20 V G S =10,8,5V 20 I D , Drain C urrent (A) ID , Drain C urrent(A) 16 V G S =4V 12 8 4 V G S =3V 15 10 T j=125 C 5 -55 C 25 C 0 0 2 4 6 8 0 0.0 12 10 V DS , Drain-to-S ource Voltage (V ) 2.2 R DS (ON) , On-R es is tance ( Normalized ) C is s 900 600 300 0 C os s C rs s 0 5 10 15 20 25 2 3 4 5 6 F igure 2. Trans fer C haracteris tics V G S =10V I D =6A 1500 1200 1 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics C , C apacitance (pF ) 5 C Min Typ Max Unit Condition S ymbol 1.8 1.4 1.0 0.6 0.2 0 30 -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 4. On-R es is tance Variation with Temperature F igure 3. C apacitance 3 V 1.3 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage S T M6920A V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20 10 Is , S ource-drain current (A) 15 12 9 6 3 V DS =5V 0 0 5 10 15 20 1 T J =25 C 0 0.4 25 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 10 V DS =20V I D =6A 8 I D , Drain C urrent (A) gF S , T rans conductance (S ) I D =250uA 1.10 T j, J unction T emperature ( C ) 18 V G S , G ate to S ource V oltage (V ) 1.15 6 4 2 10 0 2 4 6 8 10 12 14 16 L im it 10 11 0m ms s 1s DC 0.1 V G S =10V S ingle P ulse T c=25 C 0.1 Qg, T otal G ate C harge (nC ) N) 10 0.03 0 R (O DS 1 10 20 50 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 S T M6920A V DD ton 5 V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL INVE R TE D 10% 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit Thermal Resistance Normalized Transient 10 1 0.5 0.2 P DM 0.1 0.1 0.05 t1 0.02 on 0.01 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T M6920A PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D A C 0.015X45° B 0.016 TYP. S Y MB OLS A A1 D E H L A1 e 0.05 TYP. 0.008 TYP. H MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° 6 INC HE S MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° S T M6920A SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 D0 D1 E E1 E2 2.10 ψ1.5 (MIN) ψ1.5 + 0.1 - 0.0 12.0 ±0.3 1.75 5.5 ±0.05 M N W W1 H K 330 ± 1 62 ±1.5 P1 P2 T 8.0 4.0 2.0 ±0.05 0.3 ±0.05 S G R V P0 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 12.4 + 0.2 16.8 - 0.4 7 ψ12.75 + 0.15 2.0 ±0.15