SAMHOP STS2621

S T S 2621
J un.6 2005
S amHop Microelectronics C orp.
Dual P -C hannel E nhancement Mode Field E ffect Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON)
S uper high dense cell design for low R DS (ON ).
( m W ) MAX
R ugged and reliable.
130 @ V G S = -4.5V
-20V
-2A
S OT-26 P ackage.
190 @ V G S = -2.5V
G1
S1
G2
1
2
3
D2
D1
TS OP 6
Top View
6
D1
5
4
S2
D2
G2
G1
S2
S1
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
S ymbol
P arameter
Limit
Unit
Drain-S ource Voltage
V DS
-20
V
Gate-S ource Voltage
V GS
10
V
Drain C urrent-C ontinuous a @ T C =25 C
b
-P ulsed
ID
-2
A
IDM
-7
A
Drain-S ource Diode Forward C urrent a
IS
-1.25
A
Maximum P ower Dissipation a
PD
1
W
T J , T S TG
-55 to 150
C
R JA
125
C /W
Operating Junction and S torage
Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
S T S 2621
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
Condition
S ymbol
Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = -250uA
Zero Gate Voltage Drain Current
IDS S
V DS = -16V, V GS = 0V
1
uA
Gate-Body Leakage
IGS S
V GS = 10V, V DS = 0V
100
nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID =-250uA
-0.5 -0.8 -1.5
V
R DS (ON)
V GS = -4.5V, ID = -2.0A
115
130
m-ohm
Drain-S ource On-S tate R esistance
V GS = -2.5V, ID = -1.0A
175
190
m-ohm
V
-20
ON CHAR ACTE R IS TICS b
ID(ON)
gFS
On-S tate Drain Current
Forward Transconductance
V DS = -5V, V GS = -4.5V
V DS = -5V, ID = -2A
-5
A
6
S
295
PF
63
PF
52
PF
11.5
ns
15.6
ns
83.1
ns
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
V DS = -20V, V GS = 0V
f =1.0MH Z
c
tD(ON)
tr
V DD = -10V,
ID = -1A,
V GS = -4.5V,
R GE N = 6 ohm
Turn-Off Delay Time
tD(OFF)
Fall Time
Total Gate Charge
tf
43.6
ns
Qg
3.5
nC
Gate-S ource Charge
Q gs
0.9
nC
Gate-Drain Charge
Q gd
1.1
nC
V DS = -10V, ID = -2A,
V GS = -4.5V
2
S T S 2621
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
-0.85
V GS = 0V, Is =-1.25A
VSD
-1.2
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
15
20
25 C
-V G S =4.5V
16
12
-I D , Drain C urrent (A)
-I D , Drain C urrent(A)
-V G S =10V
-V G S =6V
12
-V G S =4V
8
-V G S =3V
4
-55 C
0
0.5
1
1.5
2
6
3
0
0.0
3
2.5
0.8
-V DS , Drain-to-S ource Voltage (V )
2.2
200
100
0
C os s
R DS (ON) , On-R es is tance
(Normalized)
C is s
C rs s
0
5
10
15
20
25
2.4
3.2
4.0
4.8
F igure 2. Trans fer C haracteris tics
500
300
1.6
-V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
400
T j=125 C
9
-V G S =2V
0
C , C apacitance (pF )
5
C
Min Typ Max Unit
Condition
S ymbol
1.8
1.4
1.0
0.6
0.2
0
30
-V DS , Drain-to S ource Voltage (V )
V G S =-4.5V
I D =-2.0A
-50
-25
0
25
50
75
100 125
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Temperature
F igure 3. C apacitance
3
V
V DS =V G S
I D =-250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
gF S , T rans conductance (S )
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.3
0
25
50
75
100 125
1.15
I D =-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
25
50
75 100 125
T j, J unction T emperature ( C )
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
9
20
7.5
10
6
4.5
3
1.5
V DS =-5V
0
0
3
6
9
12
1
T J =25 C
0
0.4
15
-I DS , Drain-S ource C urrent (A)
0.8
1.2
1.6
2.0
2.4
-V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
13
5
V DS =-4.5V
I D =-2.0A
4
-I D , Drain C urrent (A)
-V G S , G ate to S ource V oltage (V )
0
T j, J unction T emperature ( C )
-Is , S ource-drain current (A)
V th, Normalized
G ate-S ource T hres hold V oltage
S T S 2621
3
2
1
10
RD
0
0.5
1
1.5
2
2.5
3
3.5
4
it
10
10
0m
ms
s
1s
DC
0.1
V G S =-4.5V
S ingle P ulse
T c=25 C
0.1
Qg, T otal G ate C harge (nC )
(
L im
11
0.03
0
S
)
ON
1
10
20
50
-V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
S T S 2621
V DD
ton
5
V IN
D
tf
90%
90%
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
RL
INVE R TE D
10%
10%
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
Thermal Resistance
Normalized Transient
10
1
0.5
0.2
0.1
P DM
0.1
t1
0.05
0.02
0.01
0.00001
on
1.
2.
3.
4.
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
10
t2
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
S T S 2621
6
S T S 2621
TSOP6 Tape and Reel Data
TSOP6 Carrier Tape
TSOP6 Reel
7