S T M4472 S amHop Microelectronics C orp. Jan.7 ,2008 ver1.0 N- Channel Enhancement Mode Field Effect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS (ON ). R DS (ON) ( m ıΩ ) Max ID R ugged and reliable. 24 @ V G S = 10V 40V 7A S urface Mount P ackage. E S D P rotected. 30 @ V G S = 4.5V S O-8 1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol Limit Unit Drain-S ource Voltage V DS 40 V Gate-S ource Voltage V GS 20 V 7 A 5.9 A IDM 28 A IS 1.7 A P arameter 25 C a Drain C urrent-C ontinuous @ Ta ID 70 C -P ulsed b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Ta= 25 C PD Ta=70 C 3 W 2.1 Operating Junction and S torage Temperature R ange T J , T S TG -55 to 150 C R JA 40 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 S T M4472 N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 32V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1.8 3 V Drain-S ource On-S tate R esistance R DS (ON) V GS =10V, ID = 7A 18 24 m ohm V GS =4.5V, ID= 5A 23 30 m ohm OFF CHAR ACTE R IS TICS 40 V ON CHAR ACTE R IS TICS b ID(ON) gFS On-S tate Drain Current Forward Transconductance DYNAMIC CHAR ACTE R IS TICS C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS R ise Time Turn-Off Delay Time A 15 12.5 S 700 PF 140 PF 80 PF 13.4 ns 12.5 ns 43.3 ns 8.5 ns V DS =20V, ID =7A,V GS =10V 13.5 nC V DS =20V, ID =7A,V GS =4.5V 6.7 nC 1.8 nC 2.4 nC V DS = 5V, ID = 7A c Input Capacitance Turn-On Delay Time V DS = 5V, V GS = 10V 1 V DS =20 V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 20V ID = 1 A V GS = 10V R GE N = 3.3 ohm V DS =20V, ID = 7 A V GS =4.5V 2 S T M4472 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage 0.78 V GS = 0V, Is =1.7A VSD 1.2 V Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 15 45 VG S =4.5V VG S =10V 12 VG S =4V I D , Drain C urrent (A) ID , Drain C urrent(A) 36 27 VG S =3.5V 18 VG S =3V 9 0 0 2.0 1.5 1.0 0.5 2.5 -55 C 9 T j=125 C 6 25 C 3 0 0.0 3.0 V DS , Drain-to-S ource Voltage (V ) 1.4 2.1 2.8 3.5 4.2 F igure 2. Trans fer C haracteris tics 1.75 R DS (ON) , On-R es is tance Normalized 48 40 32 V G S =4.5V 24 V G S =10V 16 8 1 0.7 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics R DS (on) (m Ω) 5 C Min Typ Max Unit Condition S ymbol 1.60 1.30 4 8 12 16 20 V G S =4.5V I D =5A 1.15 1.00 0.85 1 V G S =10V I D =7A 1.45 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage S T M4472 1.6 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 100 125 150 75 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 60 20.0 I D =7A Is , S ource-drain current (A) R DS (on) (m Ω) 50 40 125 C 30 75 C 20 25 C 10 0 0 2 4 6 8 5.0 75 C 1.0 10 V G S , G ate-S ource Voltage (V ) 125 C 10.0 0 0.25 0.50 25 C 0.75 1.00 1.25 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T M4472 V G S , G ate to S ource V oltage (V ) 1200 C , C apacitance (pF ) 1000 5 800 C is s 600 400 C oss 200 C rs s V DS =20V I D =7A 8 6 4 2 0 0 0 10 5 10 15 20 25 0 30 2 8 10 12 14 16 Qg, T otal G ate C harge (nC ) V DS , Drain-to S ource Voltage (V ) F igure 10. G ate C harge F igure 9. C apacitance 50 100 60 I D , Drain C urrent (A) 250 S witching T ime (ns ) 6 4 TD(off) Tr Tf TD(on) 10 V D S =20V ,ID=1A 1 30 10 RD 0.1 0.03 6 10 60 100 300 600 )L im it 10 10 0m ms s 1s 1 V G S =10V 1 ON S( DC V G S =10V S ingle P ulse T A =25 C 0.1 R g, G ate R es is tance ( Ω) 1 10 40 V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics Thermal Resistance 9 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T M4472 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D A C 0.015X45± e B 0.05 TYP. A1 0.008 TYP. 0.016 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E 1.35 0.10 4.80 3.81 H L 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± 6 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± S T M4472 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:р PACKAGE SOP 8N 150п A0 6.40 B0 5.20 K0 D0 D1 E E1 E2 2.10 ӿ1.5 (MIN) ӿ1.5 + 0.1 - 0.0 12.0 ²0.3 1.75 5.5 ²0.05 M N W W1 H K 330 ² 1 62 ²1.5 12.4 + 0.2 P1 P2 T 8.0 4.0 2.0 ²0.05 0.3 ²0.05 S G R V P0 SO-8 Reel UNIT:р TAPE SIZE 12 р REEL SIZE ӿ330 16.8 - 0.4 7 ӿ12.75 + 0.15 2.0 ²0.15