SAMHOP STM4472

S T M4472
S amHop Microelectronics C orp.
Jan.7 ,2008 ver1.0
N- Channel Enhancement Mode Field Effect Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
S uper high dense cell design for low R DS (ON ).
R DS (ON) ( m ıΩ ) Max
ID
R ugged and reliable.
24 @ V G S = 10V
40V
7A
S urface Mount P ackage.
E S D P rotected.
30 @ V G S = 4.5V
S O-8
1
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
40
V
Gate-S ource Voltage
V GS
20
V
7
A
5.9
A
IDM
28
A
IS
1.7
A
P arameter
25 C
a
Drain C urrent-C ontinuous @ Ta
ID
70 C
-P ulsed
b
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Ta= 25 C
PD
Ta=70 C
3
W
2.1
Operating Junction and S torage
Temperature R ange
T J , T S TG
-55 to 150
C
R JA
40
C /W
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
S T M4472
N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
Parameter
5
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 32V, V GS = 0V
1
uA
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
10
uA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
1.8
3
V
Drain-S ource On-S tate R esistance
R DS (ON)
V GS =10V, ID = 7A
18
24 m ohm
V GS =4.5V, ID= 5A
23
30 m ohm
OFF CHAR ACTE R IS TICS
40
V
ON CHAR ACTE R IS TICS b
ID(ON)
gFS
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHAR ACTE R IS TICS
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
R ise Time
Turn-Off Delay Time
A
15
12.5
S
700
PF
140
PF
80
PF
13.4
ns
12.5
ns
43.3
ns
8.5
ns
V DS =20V, ID =7A,V GS =10V
13.5
nC
V DS =20V, ID =7A,V GS =4.5V
6.7
nC
1.8
nC
2.4
nC
V DS = 5V, ID = 7A
c
Input Capacitance
Turn-On Delay Time
V DS = 5V, V GS = 10V
1
V DS =20 V, V GS = 0V
f =1.0MH Z
c
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DD = 20V
ID = 1 A
V GS = 10V
R GE N = 3.3 ohm
V DS =20V, ID = 7 A
V GS =4.5V
2
S T M4472
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
0.78
V GS = 0V, Is =1.7A
VSD
1.2
V
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
15
45
VG S =4.5V
VG S =10V
12
VG S =4V
I D , Drain C urrent (A)
ID , Drain C urrent(A)
36
27
VG S =3.5V
18
VG S =3V
9
0
0
2.0
1.5
1.0
0.5
2.5
-55 C
9
T j=125 C
6
25 C
3
0
0.0
3.0
V DS , Drain-to-S ource Voltage (V )
1.4
2.1
2.8
3.5
4.2
F igure 2. Trans fer C haracteris tics
1.75
R DS (ON) , On-R es is tance
Normalized
48
40
32
V G S =4.5V
24
V G S =10V
16
8
1
0.7
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
R DS (on) (m Ω)
5
C
Min Typ Max Unit
Condition
S ymbol
1.60
1.30
4
8
12
16
20
V G S =4.5V
I D =5A
1.15
1.00
0.85
1
V G S =10V
I D =7A
1.45
0
25
50
75
100
125
150
T j( C )
I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
B V DS S , Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
S T M4472
1.6
V DS =V G S
I D =250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
100 125 150
0
25
50
100 125 150
75
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
60
20.0
I D =7A
Is , S ource-drain current (A)
R DS (on) (m Ω)
50
40
125 C
30
75 C
20
25 C
10
0
0
2
4
6
8
5.0
75 C
1.0
10
V G S , G ate-S ource Voltage (V )
125 C
10.0
0
0.25
0.50
25 C
0.75
1.00
1.25
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S T M4472
V G S , G ate to S ource V oltage (V )
1200
C , C apacitance (pF )
1000
5
800
C is s
600
400
C oss
200
C rs s
V DS =20V
I D =7A
8
6
4
2
0
0
0
10
5
10
15
20
25
0
30
2
8
10
12
14 16
Qg, T otal G ate C harge (nC )
V DS , Drain-to S ource Voltage (V )
F igure 10. G ate C harge
F igure 9. C apacitance
50
100
60
I D , Drain C urrent (A)
250
S witching T ime (ns )
6
4
TD(off)
Tr
Tf
TD(on)
10
V D S =20V ,ID=1A
1
30
10
RD
0.1
0.03
6 10
60 100 300 600
)L
im
it
10
10
0m
ms
s
1s
1
V G S =10V
1
ON
S(
DC
V G S =10V
S ingle P ulse
T A =25 C
0.1
R g, G ate R es is tance ( Ω)
1
10 40
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
F igure 11.s witching characteris tics
Thermal Resistance
9
1
0.5
0.2
0.1
0.1
P DM
0.05
t1
t2
0.02
1.
2.
3.
4.
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
10
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
S T M4472
PAC K AG E OUT LINE DIME NS IONS
S O-8
1
L
E
D
A
C
0.015X45±
e
B
0.05 TYP.
A1
0.008
TYP.
0.016 TYP.
H
MILLIME T E R S
INC HE S
S Y MB OLS
MIN
A
A1
D
E
1.35
0.10
4.80
3.81
H
L
5.79
0.41
0±
MAX
1.75
0.25
4.98
3.99
6.20
1.27
8±
6
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0±
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8±
S T M4472
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:р
PACKAGE
SOP 8N
150п
A0
6.40
B0
5.20
K0
D0
D1
E
E1
E2
2.10
ӿ1.5
(MIN)
ӿ1.5
+ 0.1
- 0.0
12.0
²0.3
1.75
5.5
²0.05
M
N
W
W1
H
K
330
² 1
62
²1.5
12.4
+ 0.2
P1
P2
T
8.0
4.0
2.0
²0.05
0.3
²0.05
S
G
R
V
P0
SO-8 Reel
UNIT:р
TAPE SIZE
12 р
REEL SIZE
ӿ330
16.8
- 0.4
7
ӿ12.75
+ 0.15
2.0
²0.15