SAMHOP STG8203

S T G 8203
S amHop Microelectronics C orp.
J un.06 2005 ver1.2
Dual N-C hannel E nhancement Mode Field E ffect Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
20V
ID
R DS (ON)
S uper high dense cell design for low R DS (ON ).
( m Ω ) Max
R ugged and reliable.
27 @ V G S = 4.0V
5A
S urface Mount P ackage.
42 @ V G S = 2.5V
D2( 8 )
( 1 ) D1
T S S OP
8
7
6
5
1
2
3
4
(T OP V IE W)
G2 ( 5 )
( 4 ) G1
S 2 ( 6,7 )
( 2,3 ) S 1
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
20
V
Gate-S ource Voltage
V GS
10
V
Drain C urrent-C ontinuous a @ T C =25 C
b
-P ulsed
ID
5
A
IDM
25
A
Drain-S ource Diode Forward C urrent a
IS
2
A
Maximum P ower Dissipation a
PD
1.5
W
T J , T S TG
-55 to 150
C
R JA
85
C /W
Operating Junction and S torage
Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
S T G 8203
E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted)
Parameter
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 16V, V GS = 0V
1
Gate-Body Leakage
IGS S
V GS = 10V,V DS = 0V
100 nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
Drain-S ource On-S tate R esistance
R DS (ON)
OFF CHAR ACTE R IS TICS
20
V
uA
ON CHAR ACTE R IS TICS b
gFS
Forward Transconductance
0.5
1.5
V
V GS = 4.0V, ID = 4A
24
27
m ohm
V GS =2.5V, ID = 3A
35
42
m ohm
V DS = 5V, ID =4A
13
S
800
PF
155
PF
125
PF
18.3
ns
4.8
ns
43.5
ns
20
ns
11
nC
2.2
nC
2.5
nC
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =8V, V GS = 0V
f =1.0MH Z
CRSS
c
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DD = 10V,
ID = 1A,
V GE N = 4.0V,
R L = 10 ohm
R GE N = 10 ohm
V DS =10V, ID = 4A,
V GS =4.0V
2
S T G 8203
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
V GS = 0V, Is =2A
VSD
0.8
1.2
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
25
20
25 C
V G S =10,9,8,7,6,5,4,3V
20
V G S =2V
I D , Drain C urrent (A)
ID , Drain C urrent(A)
16
12
8
4
0
0
2
4
6
8
15
T j=125 C
10
5
0
0.0
12
10
-55 C
V DS , Drain-to-S ource Voltage (V )
2.2
es is tance
R DS (ON) , On-R
(Normalized )
1200
C is s
600
300
0
0
C os s
2
4
6
8
10
0.9
1.2
1.5
1.8
V G S =4V
I D =4A
1.8
C rs s
0.6
F igure 2. Trans fer C haracteris tics
1500
900
0.3
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
C , C apacitance (pF )
5
C
Min Typ Max Unit
Condition
S ymbol
1.4
1.0
0.6
0.2
0
12
-50
-25
0
25
50
75
100 125
T j( C )
V DS , Drain-to S ource Voltage (V )
F igure 4. On-R es is tance Variation with
Temperature
F igure 3. C apacitance
3
V
1.3
B V DS S , Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
S T G 8203
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125
T j, J unction T emperature ( C )
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
20
10
Is , S ource-drain current (A)
25
20
15
10
5
V DS =5V
0
0
5
10
15
20
1
T J =25 C
0
0.4
25
0.6
0.8
1.0
1.2
1.4
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
50
5
V DS =10V
I D =4A
4
I D , Drain C urrent (A)
gF S , T rans conductance (S )
I D =250uA
1.10
T j, J unction T emperature ( C )
30
V G S , G ate to S ource V oltage (V )
1.15
3
2
1
10
R
0
2
4
6
8
10 12 14 16
L im
it
10
10
0.1
0m
ms
s
1s
DC
V G S =4V
S ingle P ulse
T c=25 C
0.1
Qg, T otal G ate C harge (nC )
N)
11
0.03
0
(O
DS
1
10
20
50
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
S T G 8203
V DD
ton
5
V IN
D
tf
90%
90%
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
RL
INVE R TE D
10%
10%
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
Thermal Resistance
Normalized Transient
10
1
0.5
0.2
P DM
0.1
0.1
t1
0.05
on
0.02
0.01
0.01
0.00001
1.
2.
3.
4.
Single Pulse
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
10
t2
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
S T G 8203
6
S T G 8203
TSSOP-8 Tape and Reel Data
TSSOP-8 Carrier Tape
UNIT : ㎜
PACKAGE
A0
B0
K0
D0
D1
E
E1
E2
P0
P1
P2
T
TSSOP
8
6.08
4.40
1.60
ψ1.50
+ 0.1
- 0.0
ψ1.50
+ 0.1
- 0.0
12.00
± 0.3
1.75
5.50
± 0.05
8.00
4.00
2.00
±0.05
0.30
±0.05
M
N
W
W1
H
K
S
G
16.0
ψ13.0
+ 0.5
- 0.2
10.6
2.0
±0.5
TSSOP-8 Reel
UNIT : ㎜
TAPE SIZE
12 ㎜
REEL SIZE
ψ330
330
100
12.5
7
R
V