S T S 8215 S amHop Microelectronics C orp. J an. 10 2008 V er1.0 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS (ON ). R DS (ON) ( m Ω ) Max ID R ugged and reliable. S urface Mount P ackage. E S D P rotected. 27.5 @ V G S = 4.0V 20V 5A 38 @ V G S = 2.5V S1 D1/D2 S2 1 2 3 D2 D1 S OT26 Top View 6 G1 5 4 D1/D2 G1 G2 G2 S1 S2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter S ymbol Limit Unit Drain-S ource Voltage V DS 20 V Gate-S ource Voltage V GS 10 V Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed ID 5 A IDM 24 A Drain-S ource Diode Forward C urrent a IS 1.25 A Maximum P ower Dissipation a PD 1.25 W T J , T S TG -55 to 150 C R JA 100 C /W Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 S T S 8215 E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 16V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 10V,V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 0.9 1.5 V Drain-S ource On-S tate R esistance R DS (ON) V GS = 4.0V, ID = 5A 23 27.5 m ohm V GS = 2.5V, ID = 3A 30 38 m ohm V DS = 5.0V, ID= 5A 16 S 540 PF 160 PF 100 PF 15 ns 20 ns 36 ns 11 ns V DS =10V, ID =5A,V GS =4V 6.4 nC V DS =10V, ID =5A,V GS =2.5V 4.6 nC 1.1 nC 2.8 nC OFF CHAR ACTE R IS TICS 20 V ON CHAR ACTE R IS TICS b gFS Forward Transconductance 0.5 DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =8V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 10V, ID = 1A, V GE N = 4.5V, R L = 10 ohm R GE N = 10 ohm V DS =10V, ID = 5 A V GS =4V 2 S T S 8215 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage V GS = 0V, Is =1.25A VSD 0.76 1.2 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 15 20 V G S =8V V G S =3V 12 V G S =2.5V I D , Drain C urrent (A) ID , Drain C urrent(A) 16 V G S =2V 12 8 4 V G S =1.5V 0.5 1.5 1.0 2.0 2.5 6 T j=125 C 3.0 25 C V DS , Drain-to-S ource Voltage (V ) 0.8 1.2 1.6 2.0 2.4 F igure 2. Trans fer C haracteris tics 60 R DS (ON) , On-R es is tance Normalized 1.5 50 R DS (on) (m Ω) 0.4 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 40 V G S =2.5V 30 20 V G S =4V 10 1 -55 C 3 0 0.0 0 0 9 1 4 8 12 16 1.4 1.2 1.1 V G S =2.5V I D =3A 1.0 0 20 V G S =4V I D =5A 1.3 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.4 V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 1.20 I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20.0 60 I D =5A Is , S ource-drain current (A) 50 R DS (on) (m Ω) 6 V th, Normalized G ate-S ource T hres hold V oltage S T S 8215 40 25 C 30 20 125 C 75 C 10 0 0 1 2 4 6 5.0 25 C 75 C 1.0 8 V G S , G ate-S ource Voltage (V ) 125 C 10.0 0 0.3 0.6 0.9 1.2 1.5 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T S 8215 V G S , G ate to S ource V oltage (V ) 600 C is s C , C apacitance (pF ) 500 6 400 300 C os s 200 C rs s 100 5 V DS =10V I D =5A 4 3 2 1 0 0 0 2 4 8 6 10 0 12 1 4 5 6 7 8 Qg, T otal G ate C harge (nC ) V DS , Drain-to S ource Voltage (V ) F igure 10. G ate C harge F igure 9. C apacitance 50 600 Tr 100 60 TD(off) I D , Drain C urrent (A) S witching T ime (ns ) 3 2 TD(on) Tf 10 V DS =10V ,ID=1A 1 30 10 R 60 100 300 600 im it 10 10 0m ms s DC 1 0.1 0.03 6 10 )L 1s V G S =4.5V 1 D ON S( V G S =10V S ingle P ulse T A =25 C 0.1 R g, G ate R es is tance ( Ω) 1 10 60 V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics Thermal Resistance Normalized Transient 10 1 0.5 0.2 P DM 0.1 0.1 t1 t2 0.05 0.02 0.01 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T S 8215 PA C K A G E O U T L I N E D I M E N S I O N S SOT26 7 S T S 8215 SOT 26 Tape and Reel Data SOT 26 Carrier Tape +0.10 О1.50 0.00 3.50 + 0.05 4.00 + 0.10 1.75 + 0.10 2.00 + 0.05 8.0 + 0.30 A B B A 5 M ax 0.25 + 0.05 +0.10 О1.00 0.00 R0 4.00 + 0.10 3.3 + 0.1 .3 R0 .3 5 Bo 3.2 + 0.1 R0 . 3 SECTION B-B Ko 1.5 + 0.1 SECTION A-A SOT 26 Reel О60 + 0.5 О178.0 + 0.5 1.50 10.6 2.2 + 0.5 9.0 О13.5 + 0.5 SCALE 2:1 SOT 26 8 R0 .3 +1.5 -0 M ax