STS3401

S T S 3401
S amHop Microelectronics C orp.
V er 1.1
P -C hannel E nhancement Mode MOS FE T
P R ODUC T S UMMAR Y
V DS S
ID
-30V
-3A
F E AT UR E S
S uper high dense cell design for low R DS (ON ).
( m Ω ) Max
R DS (ON)
R ugged and reliable.
75 @ V G S = -10V
S OT-23 P ackage.
100 @ V G S = -4.5V
D
S OT-23
D
G
S
G
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
- 30
V
Gate-S ource Voltage
V GS
20
V
Drain C urrent-C ontinuous a @ T J =125 C
b
-P ulsed
ID
-3
A
IDM
- 10
A
Drain-S ource Diode Forward C urrent a
IS
-1.25
A
Maximum P ower Dissipation a
PD
1.25
W
Operating Junction and S torage
Temperature R ange
T J , T S TG
-55 to 150
C
R JA
100
C /W
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
S T S 3401
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
5
Condition
S ymbol
Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = -250uA
Zero Gate Voltage Drain Current
IDS S
V DS = -24V, V GS = 0V
-1
uA
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
100
nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = -250uA
-2.5
V
Drain-S ource On-S tate R esistance
R DS (ON)
-30
V
ON CHAR ACTE R IS TICS b
Forward Transconductance
DYNAMIC CHAR ACTE R IS TICS
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
R ise Time
Turn-Off Delay Time
75 m-ohm
V GS = -4.5V, ID = -2A
100 m-ohm
6
A
5
S
653
PF
130
PF
97
PF
13
ns
7
ns
58
ns
26
ns
V DS =-15V,ID =-3A,V GS =-10V
13.5
nC
V DS =-15V,ID =-3A,V GS =-4.5V
7
nC
V DS =-15V, ID = -3A,
V GS =-10V
2.3
nC
2.8
nC
V DS = -5V, ID = - 3A
c
Input Capacitance
Turn-On Delay Time
-1.5
V GS = -10V, ID =-3A
V DS = -5V, V GS = -10V
ID(ON)
gFS
On-S tate Drain Current
-1
V DS =-15V, V GS = 0V
f =1.0MH Z
c
tD(ON)
V D = -15V,
ID = -1A,
V GE N = - 10V,
R GE N = 6 ohm
R L = 15 ohm
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
2
S T S 3401
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
V GS = 0V, Is =-1.25A
VSD
-1.2
-0.8
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
25
20
25 C
20
16
-I D , Drain C urrent (A)
-I D , Drain C urrent(A)
-V G S =5V
-V G S =10,9,8,7,6V
12
-V G S =4V
8
-V G S =3V
4
0
2
4
6
8
10
T j=125 C
15
10
5
-55 C
0
0.0
0
12
0.5
-V DS , Drain-to-S ource Voltage (V )
800
C is s
600
400
200
C os s
0
C rs s
0
1.5
2
2.5
3
F igure 2. Trans fer C haracteris tics
R DS (ON) , On-R es is tance(Ohms )
1000
1
-V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
C , C apacitance (pF )
5
C
Min Typ Max Unit
Condition
S ymbol
2.2
1.8
V G S =-10V
I D =-3A
1.4
1.0
0.6
0.2
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100 125
T j( C )
-V DS , Drain-to S ource Voltage (V )
F igure 4. On-R es is tance Variation with
Temperature
F igure 3. C apacitance
3
V
V DS =V G S
I D =-250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
gF S , T rans conductance (S )
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.3
0
25
50
75
100 125
1.10
I D =-250uA
1.07
1.04
1.00
0.97
0.94
0.91
-50 -25
25
50
75 100 125
T j, J unction T emperature ( C )
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
12
20
10
10
8
6
4
2
V DS =-5V
0
0
5
10
15
20
2
T J =25 C
0
0
25
0.4
-I DS , Drain-S ource C urrent (A)
0.8
1.2
1.6
2.0
-V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
50
10
V DS =-15V
I D =-3A
8
-I D , Drain C urrent (A)
-V G S , G ate to S ource V oltage (V )
0
T j, J unction T emperature ( C )
-Is , S ource-drain current (A)
V th, Normalized
G ate-S ource T hres hold V oltage
S T S 3401
6
4
2
0
10
R
(O
DS
N)
L im
it
10
10
ms
s
1s
11
0.1
0m
DC
V G S =-10V
S ingle P ulse
T c=25 C
0.03
0
2
4
6
8
10
12 16
20
0.1
Qg, T otal G ate C harge (nC )
1
10
30 50
-V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
S T S 3401
V DD
ton
5
V IN
D
tf
90%
90%
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
RL
INVE R TE D
10%
10%
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
Thermal Resistance
Normalized Transient
10
1
0.5
0.2
P DM
0.1
0.1
t1
t2
0.05
0.02
Single Pulse
0.01
0.01
0.00001
1.
2.
3.
4.
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
10
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
S T S 3401
D
E1
1
2
e
b
DETAIL "A"
A1
e1
L
DETAIL "A"
A
E
3
SYMBOLS
D
E
E1
e
e1
b
C
A
A1
L
L1
MILLIMETERS
MIN
MAX
2.800
3.000
2.700
2.900
1.500
1.700
0.950 BSC
1.900 BSC
0.300
0.500
0.080
0.200
0.010
0.150
0.940
1.300
0.300
0.600
0.600 REF.
O
O
0
6
6
L1
INCHES
MIN
MAX
0.110
0.118
0.106
0.114
0.067
0.059
0.037 BSC
0.075 BSC
0.020
0.012
0.009
0.003
0.0004
0.006
0.037
0.051
0.012
0.024
0.024 REF.
O
O
0
6
S T S 3401
SOT-23 Tape and Reel Data
SOT-23 Carrier Tape
TR
FEED DIRECTION
UNIT:р
PACKAGE
SOT-23
A0
3.20
²0.10
B0
3.00
²0.10
K0
D0
1.33
²0.10
О1.00
+0.25
D1
О1.50
+0.10
E
E1
E2
P0
P1
P2
T
8.00
+0.30
-0.10
1.75
²0.10
3.50
²0.05
4.00
²0.10
4.00
²0.10
2.00
²0.05
0.20
²0.02
SOT-23 Reel
UNIT:р
TAPE SIZE
REEL SIZE
M
N
W
W1
H
K
S
G
R
V
8р
О178
О178
²1
О60
²1
9.00
²0.5
12.00
²0.5
О13.5
!!²0.5
10.5
2.00
²0.5
О10.0
5.00
18.00
7
S T S 3401
Product No.
T01
XXX
TOP MARKING DEFINITION
Production Year (2009 = 9, 2010 = A.....)
Production Month (1,2 ~ 9, A,B,C)
Wafer Lot No.
8