STM6920

S T M6920
S amHop Microelectronics C orp.
Aug,18 2005 ver1.2
Dual N-C hannel E nhancement Mode Field E ffect Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON)
S uper high dense cell design for low R DS (ON ).
( m W ) Max
R ugged and reliable.
25 @ V G S = 10V
40V
7A
S urface Mount P ackage.
45 @ V G S = 4.5V
D1
D1
D2
D2
8
7
6
5
1
2
3
S1
G1 S 2
S O-8
1
4
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
40
V
Gate-S ource Voltage
V GS
25
V
7
5.9
A
A
IDM
22
A
IS
1.7
A
P arameter
25 C
a
Drain C urrent-C ontinuous @ Ta
-P ulsed
ID
70 C
b
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Ta= 25 C
PD
Ta=70 C
Operating Junction and S torage
Temperature R ange
T J , T S TG
2
1.44
W
-55 to 150
C
62.5
C /W
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
R JA
1
S T M6920
N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
Parameter
5
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 32V, V GS = 0V
1
Gate-Body Leakage
IGS S
V GS = 25V, V DS = 0V
100 nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
Drain-S ource On-S tate R esistance
R DS (ON)
On-S tate Drain Current
ID(ON)
gFS
OFF CHAR ACTE R IS TICS
40
V
uA
ON CHAR ACTE R IS TICS b
Forward Transconductance
1.8
2.5
V
V GS =10V, ID = 6A
20
25
m ohm
V GS =4.5V, ID= 5A
35
45
m ohm
V DS = 5V, V GS = 10V
V DS = 5V, ID = 6A
1
15
A
8
S
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
Gate resistance
Rg
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =25V, V GS = 0V
f =1.0MH Z
947
1231
PF
117
152
PF
77
100
PF
2
ohm
16.7 19
ns
5
ns
28.7 38
ns
10.1
14
ns
V DS =20V, ID =6A,V GS =10V
18.2
24
nC
V DS =20V, ID =6A,V GS =4.5V
8.7
2.8
12
nC
4
3.3
5
nC
nC
V GS =0V, V DS = 0V, f=1.0MH Z
c
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DD = 20V
ID = 1 A
V GS = 10V
R GE N = 3.3 ohm
V DS =20V, ID = 6 A
V GS =4.5V
2
3.6
S T M6920
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
Min Typ Max Unit
V GS = 0V, Is =1.7A
0.78 1.2
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
VSD
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
25
20
V G S =10,9,8,7,6,5V
20
V G S =4V
12
8
4
0
V G S =3V
0
2
4
6
8
25 C
I D , Drain C urrent (A)
ID , Drain C urrent(A)
16
15
T j=125 C
10
-55 C
5
0
0.0
12
10
V DS , Drain-to-S ource Voltage (V )
2.2
R DS (ON) , On-R es is tance
Normalized
C is s
900
600
300
0
C os s
C rs s
0
5
10
15
20
25
1.2
1.8
2.4
3.0
3.6
F igure 2. Trans fer C haracteris tics
V G S =10V
I D =6A
1500
1200
0.6
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
C , C apacitance (pF )
5
C
Condition
S ymbol
1.8
1.4
1.0
0.6
0.2
0
30
-50
-25
0
25
50
75
100 125
T j( C )
V DS , Drain-to S ource Voltage (V )
F igure 4. On-R es is tance Variation with
Temperature
F igure 3. C apacitance
3
V
1.3
B V DS S , Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
S T M6920
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125
T j, J unction T emperature ( C )
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
20
10
Is , S ource-drain current (A)
15
12
9
6
3
V DS =5V
0
0
5
10
15
20
1
T J =25 C
0
0.4
25
0.6
0.8
1.0
1.2
1.4
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
50
10
V DS =20V
I D =6A
8
I D , Drain C urrent (A)
gF S , T rans conductance (S )
I D =250uA
1.10
T j, J unction T emperature ( C )
18
V G S , G ate to S ource V oltage (V )
1.15
6
4
2
10
0
2
4
6
8
10 12 14 16
L im
it
10
11
0m
ms
s
1s
DC
0.1
V G S =10V
S ingle P ulse
T c=25 C
0.1
Qg, T otal G ate C harge (nC )
N)
10
0.03
0
R
(O
DS
1
10 20
50
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
S T M6920
V DD
ton
5
V IN
D
tf
90%
90%
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
RL
INVE R TE D
10%
10%
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
Thermal Resistance
Normalized Transient
10
1
0.5
0.2
P DM
0.1
0.1
0.05
t1
0.02
on
0.01
0.01
0.00001
1.
2.
3.
4.
Single Pulse
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
10
t2
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
S T M6920
PAC K AG E OUT LINE DIME NS IONS
S O-8
1
L
E
D
A
C
0.015X45°
B
0.016 TYP.
S Y MB OLS
A
A1
D
E
H
L
A1
e
0.05 TYP.
0.008
TYP.
H
MILLIME T E R S
MIN
1.35
0.10
4.80
3.81
5.79
0.41
0°
MAX
1.75
0.25
4.98
3.99
6.20
1.27
8°
6
INC HE S
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0°
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8°
S T M6920
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:㎜
PACKAGE
SOP 8N
150㏕
A0
6.40
B0
5.20
K0
D0
D1
E
E1
E2
2.10
ψ1.5
(MIN)
ψ1.5
+ 0.1
- 0.0
12.0
±0.3
1.75
5.5
±0.05
M
N
W
W1
H
K
330
± 1
62
±1.5
P1
P2
T
8.0
4.0
2.0
±0.05
0.3
±0.05
S
G
R
V
P0
SO-8 Reel
UNIT:㎜
TAPE SIZE
12 ㎜
REEL SIZE
ψ330
12.4
+ 0.2
16.8
- 0.4
7
ψ12.75
+ 0.15
2.0
±0.15