S T M6915 S amHop Microelectronics C orp. Dec, 12 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS (ON ). R DS (ON) ( m ı ) Max ID R ugged and reliable. 19 @ V G S = 10V 30V 8.5A S urface Mount P ackage. 28 @ V G S = 4.5V D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 S O-8 1 4 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol N-Channel Unit Drain-S ource Voltage V DS 30 V G ate-S ource Voltage VGS 20 V 8.5 A 6.5 A IDM 40 A IS 1.7 A P arameter 25 C a Drain C urrent-C ontinuous @ T a ID 70 C -P ulsed b Drain-S ource Diode F orward C urrent a Maximum P ower Dissipation a T a= 25 C PD 1.44 T a=70 C Operating J unction and S torage Temperature R ange 2 TJ, TS TG -55 to -150 W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 62.5 C /W S T M6915 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V 1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) OFF CHAR ACTE R IS TICS 30 V uA ON CHAR ACTE R IS TICS b Forward Transconductance DYNAMIC CHAR ACTE R IS TICS V V GS =10V, ID = 8A 16 19 m ohm V GS = 4.5V,ID = 5A 22 28 m ohm C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS S 770 PF 160 PF 95 PF 14 ns 16 ns 16.5 ns 29 ns V DS =15V, ID =8A,V GS =10V 14.6 nC V DS =15V, ID =8A,V GS =4.5V 7.9 nC 2.2 nC 3.5 nC V DS =15V, V GS = 0V f =1.0MH Z c tD(ON) tD(OFF) Fall Time tf R L = 15 ohm Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd Turn-Off Delay Time A 13 V DS = 5V, ID = 6A V DD = 15V, ID = 1A, V GS = 10V, R GE N = 6 ohm R ise Time 15 c Input Capacitance Turn-On Delay Time 3 V DS = 5V, V GS = 10V ID(ON) gFS On-S tate Drain Current 1.8 1 tr V DS =15V, ID = 8A, V GS =4.5V 2 S T M6915 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter C Condition Min Typ Max Unit V GS = 0V, Is =1.7A 0.82 1.2 S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage VSD Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 15 50 V G S =4.5V V G S =10V V G S =4V 12 I D , Drain C urrent (A) ID , Drain C urrent(A) 40 30 V G S =3.5V 20 V G S =3V 10 T j=125 C 9 -55 C 6 25 C 3 V G S =2.5V 0 0.0 0 0 0.5 1 1.5 2 2.5 3 V DS , Drain-to-S ource Voltage (V ) 2.4 3.2 4.0 4.8 F igure 2. Trans fer C haracteris tics 36 R DS (ON) , On-R es is tance Normalized 1.75 30 R DS (on) (m Ω) 1.6 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics V G S =4.5V 24 18 V G S =10V 12 6 1 0.8 1 10 20 30 40 1.60 1.45 1.30 1.15 V G S =4.5V I D =5A 1.00 0.85 50 V G S =10V I D =8A 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 1.20 I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 48 20.0 I D =8A 25 C Is , S ource-drain current (A) 40 R DS (on) (m Ω) 6 V th, Normalized G ate-S ource T hres hold V oltage S T M6915 75 C 32 125 C 24 16 25 C 8 0 10.0 5.0 75 C 125 C 1.0 0 2 4 6 8 10 0 V G S , G ate-S ource Voltage (V ) 0.3 0.6 0.9 1.2 1.5 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T M6915 V G S , G ate to S ource V oltage (V ) 1200 C , C apacitance (pF ) 1000 6 C is s 800 600 400 C os s 200 C rs s 5 V DS =15V I D =8A 8 6 4 2 0 0 0 10 10 15 20 25 0 30 2 50 250 I D , Drain C urrent (A) Tr TD(off) Tf TD(on) 10 V D S =15V ,ID=1A 1 10 R D ON S( )L im 12 14 16 it 10 10 0m ms s DC 1 0.1 0.03 60 100 300 600 6 10 10 1s V G S =10V 1 8 F igure 10. G ate C harge F igure 9. C apacitance 100 60 6 Qg, T otal G ate C harge (nC ) V DS , Drain-to S ource Voltage (V ) S witching T ime (ns ) 4 V G S =10V S ingle P ulse T A =25 C 0.1 R g, G ate R es is tance ( Ω) 10 1 40 V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics Thermal Resistance Normalized Transient 9 1 0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T M6915 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D A C 0.015X45± e B 0.05 TYP. A1 0.008 TYP. 0.016 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E 1.35 0.10 4.80 3.81 H L 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± 10 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± S T M6915 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:р PACKAGE SOP 8N 150п A0 6.40 B0 5.20 K0 D0 D1 E E1 E2 2.10 ӿ1.5 (MIN) ӿ1.5 + 0.1 - 0.0 12.0 ²0.3 1.75 5.5 ²0.05 M N W W1 H K 330 ² 1 62 ²1.5 12.4 + 0.2 P1 P2 T 8.0 4.0 2.0 ²0.05 0.3 ²0.05 S G R V P0 SO-8 Reel UNIT:р TAPE SIZE 12 р REEL SIZE ӿ330 16.8 - 0.4 11 ӿ12.75 + 0.15 2.0 ²0.15