SANKEN 2SB1647

(7 0 Ω ) E
2SB1647
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560)
VCB=–150V
–100max
µA
V
IEBO
VEB=–5V
–100max
µA
V
VEBO
–5
V
V(BR)CEO
IC
–15
A
hFE
IC=–30mA
–150min
VCE=–4V, IC=–10A
5000min∗
A
VCE(sat)
IC=–10A, IB=–10mA
–2.5max
IC=–10A, IB=–10mA
–3.0max
V
VCE=–12V, IE=2A
45typ
MHz
VCB=–10V, f=1MHz
320typ
IB
–1
PC
130(Tc=25°C)
W
VBE(sat)
Tj
150
°C
fT
–55 to +150
°C
Tstg
COB
15.6±0.4
9.6
1.8
ICBO
a
ø3.2±0.1
pF
2
3
1.05 +0.2
-0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–40
4
10
–10
5
–10
10
0.7typ
1.6typ
1.1typ
–4
–0.5 –1
Collector-Emi tter Voltage V C E (V)
–10
Typ
10,000
5,000
–0.5
–1
–5
–10 –15
Collector Current I C (A)
125˚C
25˚C
–30˚C
10000
5000
1000
–0.2
–0.5
–1
–5
–10 –15
1000 2000
P c – T a Derating
130
at
si
nk
Ma xim um Powe r Dissipation P C ( W)
100
he
10
100
Time t(ms)
ite
5
)
10
fin
Cut- off F req uency f T ( MH Z )
1
In
54
p)
0.1
ith
1
emp
0.5
W
0.5
Emitter Current I E (A)
Tem
1
60
20
–3
3
Safe Operating Area (Single Pulse)
40
–2
θ j-a – t Characteristics
θ j- a ( ˚C/W)
(V C E =–4V)
(V C E =–12V)
0.05 0.1
–1
Collector Current I C (A)
f T – I E Characteristics (Typical)
0
0.02
0
Base-Emittor Voltage V B E (V)
h FE – I C Temperature Characteristics (Typical)
50000
1,000
–0.2
0
–50 –100 –200
(V C E =–4V)
DC Cur r ent Gai n h F E
DC Cur r ent Gai n h F E
–5
Base Current I B (mA)
h FE – I C Characteristics (Typical)
50,000
–5
–30
0
–0.2
–6
I C =–5A
–1
se
I C =–1 0A
–10
se T
I C =–15A
(Ca
–5
–2
(V C E =–4V)
(Ca
I B =–0.3mA
–2
–15
˚C
–0. 5m A
0
–3
25˚C
–0.8 mA
–10
0
I C – V BE Temperature Characteristics (Typical)
125
A
m
–2
Collector Current I C (A)
–1 .0m A
1.4
E
V CE ( sa t ) – I B Characteristics (Typical)
Collector Current I C (A)
–1.5mA
–15
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
Transient Thermal Resistance
–50mA
–10mA
–3mA
Collector-Emitter Saturation Voltage V C E (s at) (V)
I C – V CE Characteristics (Typical)
0.65 +0.2
-0.1
5.45±0.1
B
RL
(Ω)
2.0±0.1
b
V
VCC
(V)
4.8±0.2
5.0±0.2
–150
Unit
mp)
VCEO
2SB1647
e Te
V
External Dimensions MT-100(TO3P)
(Ta=25°C)
Conditions
Cas
–150
Symbol
C
˚C (
VCBO
■Electrical Characteristics
2.0
Unit
4.0
2SB1647
19.9±0.3
Symbol
4.0max
■Absolute maximum ratings (Ta=25°C)
Equivalent circuit
Application : Audio, Series Regulator and General Purpose
20.0min
Darlington
B
50
3.5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150