SANKEN 2SC3680

2SC3680
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor)
V
IEBO
VEB=7V
100max
µA
V
V
V(BR)CEO
IC=10mA
800min
7(Pulse14)
A
hFE
VCE=4V, IC=3A
10 to 30
IB
3.5
A
VCE(sat)
IC=3A, IB=0.6A
0.5max
PC
120(Tc=25°C)
W
VBE(sat)
IC=3A, IB=0.6A
1.2max
V
Tj
150
°C
fT
VCE=12V, IE=–2A
6typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
105typ
19.9±0.3
7
IC
pF
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
250
83
3
10
–5
0.45
–1.5
1max
5max
1max
1.05 +0.2
-0.1
0
1
2
3
Collector Current I C (A)
0.05
0.1
Collector-Emitter Voltage V C E (V)
5˚
C
–5
0.5
1
0
5 7
t on •t stg • t f – I C Characteristics (Typical)
–55˚C
10
0.05
0.1
0.5
1
5
7
t s tg
5
V C C 250V
I C :I B 1 :I B2 =2:0.3:–1Const.
1
tf
0.5
t on
0.2
0.1
0.5
10
s
0µ
1
5
7
0.1
10
P c – T a Derating
100
500
Collector-Emitter Voltage V C E (V)
1000
nk
0.01
50
si
1000
at
500
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
he
0.1
ite
1
100
fin
Collector-Emitter Voltage V C E (V)
1000
In
100
100
120
0.5
0.05
50
1
ith
Without Heatsink
Natural Cooling
0.05
10
mp)
0.5
Time t(ms)
5
1
5
1.2
10
s
0.5
0.01
2
1.0
1
M aximum Power Dissipa ti on P C (W)
1m
Collector Curren t I C (A)
s
0.8
W
Collector Curren t I C ( A)
5
m
0.6
θ j-a – t Characteristics
20
20
10
0.4
2
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
10
0.2
Collector Current I C (A)
Collector Current I C (A)
0.1
Transient Thermal Resistance
C
Switching T im e
DC Cur rent Gain h F E
t on• t s t g • t f (µ s)
50
5
0.02
0
Base-Emittor Voltage V B E (V)
10
5˚
e Te
5˚C
(V C E =4V)
12
(Cas
2
Collector Current I C (A)
h FE – I C Characteristics (Typical)
25˚C
4
125˚C
)
12
V C E (sat)
0
0.02
4
(Case
emp
125˚C
)
Temp
θ j - a ( ˚ C/ W)
0
p)
ase Tem
eT
I B =100mA
2
e Temp)
as
200mA
6
–55˚C (Cas
25˚C (C
(V C E =4V)
7
V B E (sat)
(C
300 mA
4
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
1
1.4
E
˚C
Collector Current I C (A)
500mA
5.45±0.1
C
25
Collector-Emitter Saturation Voltage V CE(s a t) (V )
Base-Emitter Saturation Voltage V B E ( s a t) (V )
6
0.65 +0.2
-0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
700m A
2
3
B
RL
(Ω)
1A
ø3.2±0.1
5.45±0.1
VCC
(V)
7
2.0±0.1
b
V
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
a
4.8±0.2
p)
Tstg
15.6±0.4
9.6
1.8
µA
2.0
100max
ase Tem
VEBO
VCB=800V
5.0±0.2
800
ICBO
)
VCEO
Unit
–55˚C (C
V
2SC3680
Temp
900
External Dimensions MT-100(TO3P)
(Ta=25°C)
Conditions
Symbol
(Case
VCBO
■Electrical Characteristics
25˚C
Unit
4.0
2SC3680
4.0max
Symbol
20.0min
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
50
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
69