Si7403DN New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) FEATURES rDS(on) (W) ID (A) 0.1 @ VGS = –4.5 V –4.5 0.135 @ VGS = –2.5 V –3.8 D TrenchFETr Power MOSFETS: 2.5-V Rated D New PowerPAKt Package – Low Thermal Resistance, RthJC – Low 1.07-mm Profile –20 APPLICATIONS D Load Switching D PA Switching S S S PowerPAKt 1212-8 S 3.30 mm 3.30 mm 1 S 2 S 3 G G 4 D 8 P-Channel MOSFET D 7 D 6 D 5 Bottom View D D D D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS –20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C V –4.5 –2.9 –3.2 –2.1 ID TA = 85_C Pulsed Drain Current IDM continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 85_C Operating Junction and Storage Temperature Range PD A –20 –3.0 –1.3 3.5 1.5 1.9 0.8 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case Steady State Steady State RthJA RthJC Typical Maximum 28 35 65 81 4.5 5.6 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71431 S-03390—Rev. A, 02-Apr-01 www.vishay.com 1 Si7403DN New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = –250 mA –0.45 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea "100 VDS = –20 V, VGS = 0 V –1 VDS = –20 V, VGS = 0 V, TJ = 70_C –5 VDS = –5 V, VGS = –4.5 V –10 VDS = –5 V, VGS = –2.5 V –4 nA m mA A VGS = –4.5 V, ID = –3.3 A 0.078 0.1 VGS = –2.5 V, ID = –2.9 A 0.110 0.135 gfs VDS = –10 V, ID = –3.3 A 8.8 VSD IS = –1.6 A, VGS = 0 V 0.8 –1.2 8.6 14 Forward Transconductancea Diode Forward VDS = 0 V, VGS = "4.5 V rDS(on) Voltagea V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.1 Turn-On Delay Time td(on) 27 50 tr 17 30 52 80 45 70 50 80 Rise Time Turn-Off Delay Time VDS = –10 V, VGS = –4.5 V, ID = –4.5 A VDD = –10 V, RL = 10 W ID ^ –1.6 A, VGEN = –4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 1.5 IF = –1.6 A, di/dt = 100 A/ms nC ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 4.5, 4, 3.5 V TC = –55_C 16 16 3V I D – Drain Current (A) I D – Drain Current (A) 125_C 12 2.5 V 8 2V 4 12 25_C 8 4 1.5 V 0 0 0 1 2 3 4 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 5 0 1 2 3 4 VGS – Gate-to-Source Voltage (V) Document Number: 71431 S-03390—Rev. A, 02-Apr-01 Si7403DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance On-Resistance vs. Drain Current 1400 0.30 C – Capacitance (pF) r DS(on)– On-Resistance ( W ) 1200 0.24 0.18 VGS = 2.5 V 0.12 VGS = 4.5 V 1000 800 600 Ciss 400 Coss 0.06 200 Crss 0.00 0 0 4 8 12 16 20 0 4 Gate Charge V GS – Gate-to-Source Voltage (V) r DS(on)– On-Resistance ( W ) (Normalized) 3 2 1 0 4 6 8 1.4 1.2 1.0 0.8 0.6 –50 10 Qg – Total Gate Charge (nC) –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.30 r DS(on)– On-Resistance ( W ) 20 I S – Source Current (A) 20 VGS = 4.5 V ID = 3.3 A 1.6 4 2 16 On-Resistance vs. Junction Temperature 1.8 VDS = 10 V ID = 3.3 A 0 12 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 5 8 10 TJ = 150_C TJ = 25_C 0.24 0.18 ID = 3.3 A 0.12 0.06 0.00 1 0 0.25 0.50 0.75 1.00 1.25 VSD – Source-to-Drain Voltage (V) Document Number: 71431 S-03390—Rev. A, 02-Apr-01 1.50 0 2 4 6 8 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si7403DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.4 50 40 0.2 Power (W) V GS(th) Variance (V) 0.3 ID = 250 mA 0.1 30 20 0.0 10 –0.1 –0.2 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 Time (sec) TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 68_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 www.vishay.com 4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 Document Number: 71431 S-03390—Rev. A, 02-Apr-01