SANKEN TM1241S-R

TO-220F 12A Triac
TM1241S-R, TM1261S-R
■ Features
External Dimensions
0.2
0.8±0.2
)
a
b
1.35±0.15
0.2
●Isolation voltage: VISO=1500V(50Hz Sine wave, RMS)
●UL approved type available
1.35±
+0.2
0.85 – 0.1
3.9±
13.0 min
●For resistive load
4.2±0.2
C 0.5
2.8
10.0±0.2
4.0±
16.9±0.3
8.4±0.2
●RMS on-state current: IT(RMS)=12A
●Gate trigger current: IGT=8mA max (MODE , ,
φ 3.3±0.2
(Unit: mm)
●Repetitive peak off-state voltage: VDRM=400, 600V
0.15
2.54
2.54
2.2±0.2
2.4±0.2
+0.2
0.45 – 0.1
(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)
(1) (2) (3)
a. Part Number
b. Lot Number
Weight: Approx. 2.1g
■Absolute Maximum Ratings
Parameter
Symbol
Ratings
TM1241S-R
TM1261S-R
Unit
Conditions
Repetitive peak off-state voltage
VDRM
RMS on-state current
IT(RMS)
12
A
Conduction angle 360°, Tc=84°C
Surge on-state current
ITSM
110
A
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
Peak gate voltage
VGM
—
V
Peak gate current
IGM
2
A
Peak gate power loss
PGM
5
W
Average gate power loss
400
600
V
PG(AV)
0.5
W
Junction temperature
Tj
– 40 to +125
°C
Storage temperature
Tstg
– 40 to +125
°C
Isolation voltage
VISO
1500
Vrms
50Hz Sine wave, RMS, Terminal to Case, 1 min.
■Electrical Characteristics
Parameter
Symbol
Off-state current
IDRM
On-state voltage
VTM
(Tj=25°C, unless otherwise specified)
Ratings
min
typ
2.0
0.1
1.6
1.1
Gate trigger voltage
max
VGT
Unit
Conditions
mA
VD=VDRM, RGK=∞, Tj=25°C
V
VD=VDRM, RGK=∞, Tj=125°C
Pulse test, ITM=16A
0.6
1.2
0.7
1.2
V
VD=6V, RL=10Ω, TC=25°C
Gate trigger current
4.5
IGT
5
Holding current
Thermal resistance
58
VGD
IH
Rth
–
–
–
–
+
+
+
T2 , G
T2 , G
T2 , G
8
8
8
mA
VD=6V, RL=10Ω, TC=25°C
+
–
–
–
–
+
T2 , G
T2 , G
T2 , G
25
Gate non-trigger voltage
+
+
T2 , G
2.1
5
+
T2 , G
1.8
V
0.1
mA
6
3.0
°C/W
VD=1/2×VDRM, Tj=125°C
VD=6V
Junction to case
TM1241S-R, TM1261S-R
Gate Characteristics
0.5
1.0
1.5
2.0
2.5
40
6
3.0
3.5
5
10
50
10
8
6
4
Ambient temperature Ta (°C)
Case temperature TC (°C)
12
100
75
50
25
0
10
Tj= –40°C
20
1
2
3
iGF (A)
IH temperature Characteristics
(Typical)
Full-cycle sinewave
Conduction angle : 360°
Self-supporting
Natural cooling
No wind
125
30
Gate trigger current
IGT (mA)
(RGK=∞)
50
Full-cycle sinewave
Conduction angle :360°
125
14
0
Gate current
150
Full-cycle sinewave
Conduction angle :360°
16
0
IT(RMS) – Ta Ratings
150
18
1
0
100
Number of cycle
IT(RMS) – Tc Ratings
2
See graph at the upper right
2
1
3
4
20
vT ( V )
IT(RMS) – PT(AV) Characteristics
100
75
50
10
5
25
1
2
0
8
10
12
14
0
0
2
4
6
8
10
12
14
Pulse trigger temperature Characteristics
100
1000
v
Ta= – 40°C
vgt
–20°C
tw
0°C
25°C
50°C
75°C
100°C
125°C
1.5
1.0
0.5
0.5 1
10
0.2
0.5 1
10
100
Pulse width
1000
Ta= – 40°C
–20°C
tw
0°C
25°C
50°C
75°C
100°C
125°C
10
5
1
0.5
0.2
0.5 1
10
100
Pulse width
1000
(Typical)
50
E
( T2 +
,G +
)
(T2–,G –
(T2+,G –
)
)
0.4
MODE
MODE
MODE
10
(T2–, G– )
(T2+, G+ )
(T2+, G– )
5
0.2
0
–40
0
25
50
75
100
Junction temperature Tj (°C)
0.5
0.5 1
10
125
100
1000
1
–40
0
25
Ta= – 40°C
igt
–20°C
tw
0°C
25°C
50°C
75°C
100°C
125°C
10
5
1
0.5
0.2
0.5 1
10
50
75
100
Junction temperature Tj (°C)
125
100
1000
t w (µs)
Transient thermal resistance
Characteristics
100
Transient thermal resistance
MOD
E
Gate trigger current IGT (mA)
MOD
0.8
1.0
rth (°C/W)
(VD=20V, RL=40Ω)
1.6
1.2
1.5
Pulse width
IGT temperature characteristics
MO
DE
125
Ta= – 40°C
vgt
–20°C
tw
0°C
25°C
50°C
75°C
100°C
125°C
t w (µs)
(Typical)
1.4
100
(MODE – )
VGT temperature characteristics
1.8
75
30
t w (µs)
(VD=20V, RL=40Ω)
50
Pulse width tw (µs)
trigger current
igt (Gate
)
at Ta and tw
(
trigger current
igt (Gate
)
at Ta and tw
1
0.5
(
i
1000
igt
)
gate trigger
IGT DC
current at 25°C
)
5
25
2.0
(MODE – )
tw
Ta= – 40°C
–20°C
0°C
25°C
50°C
75°C
100°C
125°C
)
(
gate trigger
IGT DC
current at 25°C
gt Gate trigger current
at Ta and tw
100
30
30
igt
0
Junction temperature Tj (°C)
igt (Typical)
(MODE – )
10
0.5
–40
3.0
Pulse width tw (µs)
Pulse trigger temperature Characteristics
0.6
2.5
(MODE – )
2.0
Pulse width tw (µs)
1.0
2.0
trigger voltage
vgt ( Gate
)
at Ta and tw
)
(
gate trigger
VGT DC
voltage at 25°C
trigger voltage
vgt ( Gate
)
at Ta and tw
)
)
(
gate trigger
VGT DC
voltage at 25°C
gt Gate trigger voltage
at Ta and tw
(
10
1.5
(MODE – )
1.0
0.5
0.5 1
1.0
vgt (Typical)
vgt
Ta= – 40°C
–20°C
tw
0°C
25°C
50°C
75°C
100°C
125°C
1.5
0.5
RMS on-state current IT(RMS) (A)
(MODE – )
2.0
0
RMS on-state current IT(RMS) (A)
)
6
(
4
gate trigger
VGT DC
voltage at 25°C
2
RMS on-state current IT(RMS) (A)
)
0
(
0
gate trigger
IGT DC
current at 25°C
Average on-state power PT(AV) (W)
60
0
0.5
On-state voltage
Gate trigger voltage VGT (V)
8
Holding current IH (mA)
0.1
80
Gate voltage
Tj=25°C
1
10
10 ms
1cycle
vGF (V)
Surge on-state current ITSM (A)
Tj=125°C
5
100
W
=5
P GM
On-state current
iT (A)
50
10
12
Initial junction temperature
Tj=125°C
ITSM
Tj= –20°C
120
Tj=25°C
ITSM Ratings
100
Gate trigger voltage VGT (V)
vT – iT Characteristics (max)
Junction to
operating
environment
10
Junction to
case
1
0.1
0.05
0.1
1
10
10 2
10 3
10 4
10 5
t, Time (ms)
59