TO-220F 12A Triac TM1241S-R, TM1261S-R ■ Features External Dimensions 0.2 0.8±0.2 ) a b 1.35±0.15 0.2 ●Isolation voltage: VISO=1500V(50Hz Sine wave, RMS) ●UL approved type available 1.35± +0.2 0.85 – 0.1 3.9± 13.0 min ●For resistive load 4.2±0.2 C 0.5 2.8 10.0±0.2 4.0± 16.9±0.3 8.4±0.2 ●RMS on-state current: IT(RMS)=12A ●Gate trigger current: IGT=8mA max (MODE , , φ 3.3±0.2 (Unit: mm) ●Repetitive peak off-state voltage: VDRM=400, 600V 0.15 2.54 2.54 2.2±0.2 2.4±0.2 +0.2 0.45 – 0.1 (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) (1) (2) (3) a. Part Number b. Lot Number Weight: Approx. 2.1g ■Absolute Maximum Ratings Parameter Symbol Ratings TM1241S-R TM1261S-R Unit Conditions Repetitive peak off-state voltage VDRM RMS on-state current IT(RMS) 12 A Conduction angle 360°, Tc=84°C Surge on-state current ITSM 110 A 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C Peak gate voltage VGM — V Peak gate current IGM 2 A Peak gate power loss PGM 5 W Average gate power loss 400 600 V PG(AV) 0.5 W Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Isolation voltage VISO 1500 Vrms 50Hz Sine wave, RMS, Terminal to Case, 1 min. ■Electrical Characteristics Parameter Symbol Off-state current IDRM On-state voltage VTM (Tj=25°C, unless otherwise specified) Ratings min typ 2.0 0.1 1.6 1.1 Gate trigger voltage max VGT Unit Conditions mA VD=VDRM, RGK=∞, Tj=25°C V VD=VDRM, RGK=∞, Tj=125°C Pulse test, ITM=16A 0.6 1.2 0.7 1.2 V VD=6V, RL=10Ω, TC=25°C Gate trigger current 4.5 IGT 5 Holding current Thermal resistance 58 VGD IH Rth – – – – + + + T2 , G T2 , G T2 , G 8 8 8 mA VD=6V, RL=10Ω, TC=25°C + – – – – + T2 , G T2 , G T2 , G 25 Gate non-trigger voltage + + T2 , G 2.1 5 + T2 , G 1.8 V 0.1 mA 6 3.0 °C/W VD=1/2×VDRM, Tj=125°C VD=6V Junction to case TM1241S-R, TM1261S-R Gate Characteristics 0.5 1.0 1.5 2.0 2.5 40 6 3.0 3.5 5 10 50 10 8 6 4 Ambient temperature Ta (°C) Case temperature TC (°C) 12 100 75 50 25 0 10 Tj= –40°C 20 1 2 3 iGF (A) IH temperature Characteristics (Typical) Full-cycle sinewave Conduction angle : 360° Self-supporting Natural cooling No wind 125 30 Gate trigger current IGT (mA) (RGK=∞) 50 Full-cycle sinewave Conduction angle :360° 125 14 0 Gate current 150 Full-cycle sinewave Conduction angle :360° 16 0 IT(RMS) – Ta Ratings 150 18 1 0 100 Number of cycle IT(RMS) – Tc Ratings 2 See graph at the upper right 2 1 3 4 20 vT ( V ) IT(RMS) – PT(AV) Characteristics 100 75 50 10 5 25 1 2 0 8 10 12 14 0 0 2 4 6 8 10 12 14 Pulse trigger temperature Characteristics 100 1000 v Ta= – 40°C vgt –20°C tw 0°C 25°C 50°C 75°C 100°C 125°C 1.5 1.0 0.5 0.5 1 10 0.2 0.5 1 10 100 Pulse width 1000 Ta= – 40°C –20°C tw 0°C 25°C 50°C 75°C 100°C 125°C 10 5 1 0.5 0.2 0.5 1 10 100 Pulse width 1000 (Typical) 50 E ( T2 + ,G + ) (T2–,G – (T2+,G – ) ) 0.4 MODE MODE MODE 10 (T2–, G– ) (T2+, G+ ) (T2+, G– ) 5 0.2 0 –40 0 25 50 75 100 Junction temperature Tj (°C) 0.5 0.5 1 10 125 100 1000 1 –40 0 25 Ta= – 40°C igt –20°C tw 0°C 25°C 50°C 75°C 100°C 125°C 10 5 1 0.5 0.2 0.5 1 10 50 75 100 Junction temperature Tj (°C) 125 100 1000 t w (µs) Transient thermal resistance Characteristics 100 Transient thermal resistance MOD E Gate trigger current IGT (mA) MOD 0.8 1.0 rth (°C/W) (VD=20V, RL=40Ω) 1.6 1.2 1.5 Pulse width IGT temperature characteristics MO DE 125 Ta= – 40°C vgt –20°C tw 0°C 25°C 50°C 75°C 100°C 125°C t w (µs) (Typical) 1.4 100 (MODE – ) VGT temperature characteristics 1.8 75 30 t w (µs) (VD=20V, RL=40Ω) 50 Pulse width tw (µs) trigger current igt (Gate ) at Ta and tw ( trigger current igt (Gate ) at Ta and tw 1 0.5 ( i 1000 igt ) gate trigger IGT DC current at 25°C ) 5 25 2.0 (MODE – ) tw Ta= – 40°C –20°C 0°C 25°C 50°C 75°C 100°C 125°C ) ( gate trigger IGT DC current at 25°C gt Gate trigger current at Ta and tw 100 30 30 igt 0 Junction temperature Tj (°C) igt (Typical) (MODE – ) 10 0.5 –40 3.0 Pulse width tw (µs) Pulse trigger temperature Characteristics 0.6 2.5 (MODE – ) 2.0 Pulse width tw (µs) 1.0 2.0 trigger voltage vgt ( Gate ) at Ta and tw ) ( gate trigger VGT DC voltage at 25°C trigger voltage vgt ( Gate ) at Ta and tw ) ) ( gate trigger VGT DC voltage at 25°C gt Gate trigger voltage at Ta and tw ( 10 1.5 (MODE – ) 1.0 0.5 0.5 1 1.0 vgt (Typical) vgt Ta= – 40°C –20°C tw 0°C 25°C 50°C 75°C 100°C 125°C 1.5 0.5 RMS on-state current IT(RMS) (A) (MODE – ) 2.0 0 RMS on-state current IT(RMS) (A) ) 6 ( 4 gate trigger VGT DC voltage at 25°C 2 RMS on-state current IT(RMS) (A) ) 0 ( 0 gate trigger IGT DC current at 25°C Average on-state power PT(AV) (W) 60 0 0.5 On-state voltage Gate trigger voltage VGT (V) 8 Holding current IH (mA) 0.1 80 Gate voltage Tj=25°C 1 10 10 ms 1cycle vGF (V) Surge on-state current ITSM (A) Tj=125°C 5 100 W =5 P GM On-state current iT (A) 50 10 12 Initial junction temperature Tj=125°C ITSM Tj= –20°C 120 Tj=25°C ITSM Ratings 100 Gate trigger voltage VGT (V) vT – iT Characteristics (max) Junction to operating environment 10 Junction to case 1 0.1 0.05 0.1 1 10 10 2 10 3 10 4 10 5 t, Time (ms) 59