SUM110N05-06L New Product Vishay Siliconix N-Channel 55-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 55 rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 110 0.085 @ VGS = 4.5 V 92 D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D Automotive and Industrial D TO-263 G G D S Top View S SUM110N05-06L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 55 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) _ TC = 25_C TC = 125_C Pulsed Drain Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C Maximum Power Dissipation TA = 25_C c V 110 ID IDM Avalanche Current Unit 63 240 IAR 60 EAR 180 A mJ 158b PD 3.7 W TJ, Tstg -55 to 175 _C Symbol Limit Unit Junction-to-Ambient—PCB Mountc RthJA 40 Junction-to-Case RthJC 0.95 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter _ _C/W Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 72005 S-21713—Rev. A, 07-Oct-02 www.vishay.com 1 SUM110N05-06L New Product Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 55 VGS(th) VDS = VGS, ID = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 44 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea IDSS ID(on) rDS(on) V 3 VDS = 44 V, VGS = 0 V, TJ = 125_C 50 VDS = 44 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V 120 VGS = 10 V, ID = 30 A 0.0047 0.006 VGS = 4.5 V, ID = 20 A 0.0066 0.0085 VDS = 15 V, ID = 30 A W 0.0102 VGS = 10 V, ID = 30 A, TJ = 175_C gfs mA m A VGS = 10 V, ID = 30 A, TJ = 125_C Forward Transconductancea nA 0.0132 30 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 310 Total Gate Chargec Qg 65 Gate-Source Chargec Qgs 15 Gate-Drain Chargec Qgd 16 Turn-On Delay Timec td(on) 15 25 tr 15 25 35 55 15 25 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 3300 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 110 A VDD = 30 V, RL = 0.27 W ID ^ 110 A, VGEN = 10 V, RG = 2.5 W tf 625 pF 100 nC ns Source-drain Diode Ratings and Characteristics (Tc = 25_C)b Continuous Current IS 110 Pulsed Current ISM 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 110 A, VGS = 0 V 1.0 1.5 V 70 125 ns IF = 110 A, di/dt = 100 A/ms 2.5 5 A 0.09 0.31 mC trr IRM(REC) Qrr A Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72005 S-21713—Rev. A, 07-Oct-02 SUM110N05-06L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 250 VGS = 10 thru 5 V 200 I D - Drain Current (A) I D - Drain Current (A) 200 150 4V 100 50 150 100 TC = 125_C 50 25_C -55 _C 2, 3 V 0 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 2 3 Transconductance 5 6 On-Resistance vs. Drain Current 0.015 r DS(on) - On-Resistance ( W ) TC = -55_C 160 25_C 120 125_C 80 40 0 0.012 0.009 VGS = 4.5 V 0.006 VGS = 10 V 0.003 0.000 0 15 30 45 60 75 90 0 20 40 VGS - Gate-to-Source Voltage (V) 60 80 100 120 100 120 ID - Drain Current (A) Capacitance Gate Charge 20 V GS - Gate-to-Source Voltage (V) 5000 4000 C - Capacitance (pF) 4 VGS - Gate-to-Source Voltage (V) 200 g fs - Transconductance (S) 1 Ciss 3000 2000 Crss 1000 Coss 0 VGS = 30 V ID = 110 A 16 12 8 4 0 0 11 22 33 44 VDS - Drain-to-Source Voltage (V) Document Number: 72005 S-21713—Rev. A, 07-Oct-02 55 0 20 40 60 80 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM110N05-06L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S - Source Current (A) r DS(on) - On-Resistance (W) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 150_C TJ = 25_C 10 0.5 0.0 -50 -25 0 25 50 75 100 125 150 1 0.2 175 0.4 TJ - Junction Temperature (_C) 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time On-Resistance vs. Junction Temperature 70 1000 r DS(on) - On-Resistance (W) (Normalized) ID = 10 m A I Dav (a) 100 10 IAV (A) @ TJ = 25_C 1 65 60 55 IAV (A) @ TJ = 150_C 0.1 0.00001 0.0001 0.001 0.01 tin (Sec) www.vishay.com 4 0.1 1 50 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) Document Number: 72005 S-21713—Rev. A, 07-Oct-02 SUM110N05-06L New Product Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Case Temperature Safe Operating Area 1000 120 10 ms Limited by rDS(on) 100 I D - Drain Current (A) I D - Drain Current (A) 100 80 60 40 10 1 ms 1 20 0 100 ms 10 ms 100 ms dc TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TC - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Document Number: 72005 S-21713—Rev. A, 07-Oct-02 www.vishay.com 5