ONSEMI 2N4033

2N4029, 2N4033
Small Signal Switching
Transistor
PNP Silicon
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Features
• MIL−PRF−19500/512 Qualified
• Available as JAN, JANTX, and JANTXV
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−80
Vdc
Collector −Base Voltage
VCBO
−80
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
1
Adc
Total Device Dissipation @ TA = 25°C
2N4029
2N4033
PT
Total Device Dissipation @ TC = 25°C
2N4029
2N4033
PT
1
EMITTER
W
0.5
0.8
W
1.0
4.0
TJ, Tstg
−65 to +200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
2N4029
2N4033
RqJA
Operating and Storage Junction
Temperature Range
2
BASE
TO−18
CASE 206AA
STYLE 1
2N4029
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
2N4029
2N4033
RqJC
°C/W
325
195
150
40
November, 2013 − Rev. 1
JAN
Device
Package
Shipping
2N4029
TO−18
Bulk
2N4033
TO−39
Bulk
JANTX
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2013
ORDERING INFORMATION
Level
°C/W
TO−39
CASE 205AB
STYLE 1
2N4033
1
JANTXV
Publication Order Number:
2N4029/D
2N4029, 2N4033
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
−80
−
−
−25
−
−
−10
−10
mA
nA
−
−
−10
−25
mA
nA
50
100
70
25
−
300
−
−
−
−
−
−0.15
−0.5
−1.0
−
−
−0.9
−1.2
1.5
6.0
−
20
−
80
OFF CHARACTERISTICS
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc)
Collector −Emitter Cutoff Current
(VCE = −60 Vdc)
ICES
Collector−Base Cutoff Current
(VCB = −80 Vdc, IE = 0)
(VCB = −60 Vdc, IE = 0)
ICBO
Emitter−Base Cutoff Current
(VEB = −5 Vdc)
(VEB = −3 Vdc)
IEBO
Vdc
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = −0.1 mAdc, VCE = −5 Vdc)
(IC = −100 mAdc, VCE = −5 Vdc)
(IC = −500 mAdc, VCE = −5 Vdc)
(IC = −1 Adc, VCE = −5 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
(IC = −1 Adc, IB = −100 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Magnitude of Small−Signal Current Gain
(IC = −50 mAdc, VCE = −10 Vdc, f = 100 MHz)
|hfe|
Output Capacitance
(VCB = −10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz)
Cobo
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz)
Cibo
−
pF
pF
SWITCHING CHARACTERISTICS
Delay Time
(Reference Figure in MIL−PRF−19500/512)
td
−
15
ns
Rise Time
(Reference Figure in MIL−PRF−19500/512)
tr
−
25
ns
Storage Time
(Reference Figure in MIL−PRF−19500/512)
ts
−
175
ns
Fall Time
(Reference Figure in MIL−PRF−19500/512)
tf
−
35
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
2N4029, 2N4033
450
1.2
150°C
VBESAT, BASE−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
400
350
300
250
25°C
200
150
−55°C
100
50
0
0.1
VCE = 10 V
1
10
0.8
25°C
0.6
150°C
0.4
0.2
IC/IB = 10
100
1
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. Base−Emitter Saturation Voltage
1.1
IC/IB = 10
0.2
150°C
25°C
0.1
−55°C
0
0.1
1
10
VBEON, BASE−EMITTER VOLTAGE
(V)
VCESAT, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
−55°C
0
0.1
0.3
1.0
VCE = 1 V
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.1
0
0.1
100
1
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector−Emitter Saturation Voltage
Figure 4. Base−Emitter Voltage
70
1.0
300 mA
CIBO, INPUT CAPACITANCE (pF)
VCESAT, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1.0
IC = 10 mA
100 mA
0.1
500 mA
0.01
0.01
0.10
1
IB, BASE CURRENT (mA)
60
50
40
30
20
10
0
−5
10
TJ = 25°C
fTEST = 10 kHz
−4
−3
−2
VBE, BASE−EMITTER (V)
Figure 5. Collector Saturation Region
Figure 6. Input Capacitance
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3
−1
0
COBO, OUTPUT CAPACITANCE (pF)
35
30
ft, CURRENT GAIN BANDWIDTH (MHz)
2N4029, 2N4033
TJ = 25°C
fTEST = 10 kHz
25
20
15
10
5
0
−20 −18 −16 −14 −12 −10 −8
−6 −4
VBC, BASE−COLLECTOR VOLTAGE (V)
−2
0
350
TJ = 25°C
VCE = −5 V
300
250
200
150
100
50
0
1
Figure 7. Output Capacitance
10
IC, COLLECTOR CURRENT (mA)
Figure 8. Current Gain Bandwidth Product
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4
100
2N4029, 2N4033
PACKAGE DIMENSIONS
TO−18 3
CASE 206AA
ISSUE A
B
A
B
DETAIL X
U
P
C
L
R
F
U
A
SEATING
PLANE
K
NOTE 5
E
T
NOTE 7
D NOTES 4 & 6
0.007 (0.18MM) A B S C
DETAIL X
3X
M
N
H
2
1
3
J
M
C
LEAD IDENTIFICATION
DETAIL
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5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­
SIONS A, B, AND T.
DIM
A
B
C
D
E
F
H
J
K
L
M
N
P
R
T
U
MILLIMETERS
MIN
MAX
5.31
5.84
4.52
4.95
4.32
5.33
0.41
0.53
--0.76
0.41
0.48
0.91
1.17
0.71
1.22
12.70
19.05
6.35
--45_BSC
2.54 BSC
--1.27
1.37 BSC
--0.76
2.54
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
INCHES
MIN
MAX
0.209
0.230
0.178
0.195
0.170
0.210
0.016
0.021
--0.030
0.016
0.019
0.036
0.046
0.028
0.048
0.500
0.750
0.250
--45 _BSC
0.100 BSC
--0.050
0.054 BSC
--0.030
0.100
---
2N4029, 2N4033
PACKAGE DIMENSIONS
TO−39 3−Lead
CASE 205AB
ISSUE A
B
A
B
DETAIL X
U
P
C
L
R
F
U
A
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
K
NOTE 5
E
T
NOTE 7
D NOTES 4 & 6
0.007 (0.18MM) A B S C
DETAIL X
3X
M
N
H
2
1
3
J
M
C
LEAD IDENTIFICATION
DETAIL
DIM
A
B
C
D
E
F
H
J
K
L
M
N
P
R
T
U
MILLIMETERS
MIN
MAX
8.89
9.40
8.00
8.51
6.10
6.60
0.41
0.48
0.23
3.18
0.41
0.48
0.71
0.86
0.73
1.02
12.70
14.73
6.35
--45_BSC
5.08 BSC
--1.27
1.37 BSC
--0.76
2.54
---
INCHES
MIN
MAX
0.350
0.370
0.315
0.335
0.240
0.260
0.016
0.019
0.009
0.125
0.016
0.019
0.028
0.034
0.029
0.040
0.500
0.580
0.250
--45 _BSC
0.200 BSC
--0.050
0.054 BSC
--0.030
0.100
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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For additional information, please contact your local
Sales Representative
2N4029/D