Product Data Sheet DC- 20 GHz SP4T PIN Switch TGS2304-SCC Key Features and Performance • • • • • • DC to 20 GHz Frequency Range 0.6 dB Typical Midband Insertion Loss 38 dB Typical Midband Isolation Typical Input / Output SWR 1.2:1, Midband 23 dB Typical Input Power at 1 dB Gain Compression 2.540 x 3.556 x 0.1016 mm (0.100 x 0.140 x 0.004 in.) Description The TriQuint TGS2304-SCC is a GaAs monolithic PIN-diode single-pole, four-throw switch, in chip form, that operates from DC to 20 GHz. Each arm consists of one series and two shunt PIN diodes. At a bias current of 10 mA per RF output arm, typical midband insertion loss is 0.6 dB; midband return loss is approximately 20 dB. Typical isolation at 10 mA bias is 40 dB. Insertion loss and isolation can be adjusted by varying the switch arm bias currents. Using a GaAs vertical PIN diode process, TriQuint has produced switches with high power handling capability, low on-state resistance, and low off-state capacitance. The higher cutoff frequency of the PIN diode element makes this switch ideal for broadband electronic components and communication systems wherein the MMIC construction offers reduced size, cost, and assembly time. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 1 Product Data Sheet TGS2304-SCC TYPICAL INSERTION LOSS TYPICAL ISOLATION TYPICAL INPUT POWER P1dB TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 2 Product Data Sheet TGS2304-SCC TYPICAL RETURN LOSS TYPICAL INSERTION LOSS VS. CONTROL BIAS CURRENT TYPICAL ISOLATION VS. CONTROL BIAS CURRENT TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 3 Product Data Sheet TGS2304-SCC TYPICAL INPUT RETURN LOSS VS. CONTROL BIAS CURRENT TYPICAL OUTPUT RETURN LOSS VS. CONTROL BIAS CURRENT TYPICAL INSERTION LOSS VS. CONTROL BIAS CURRENT TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 4 Product Data Sheet TGS2304-SCC TYPICAL ISOLATION VS. CONTROL BIAS CURRENT TYPICAL INPUT RETURN LOSS VS. CONTROL BIAS CURRENT TYPICAL INPUT RETURN LOSS VS. CONTROL BIAS CURRENT TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 5 Product Data Sheet TGS2304-SCC ABSOLUTE MAXIMUM RATINGS Forw ard Voltage, V F…………………………………………………………………………………………. 2.5 V Forw ard Voltage, V R…………………………………………………………………………………………. 30 V Bias current…………………………………………………………………………………………………… 50 mA Input continuous w ave pow er, PIN……………………………………………………………………………2 W Mounting temperature (30 sec.), TM………………………………………………………………………….320oC Storage temperature range, TSTG…………………………………………………………………………….-65 to 175oC Ratings over operating channel tem perature range, TCH (unless otherw ise noted). Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. DC blocks are not provided at RF ports. The operating junction temperature (TJ ) w ill directly affect the device MTTF. For maximum life, it is recommended that junction temperature be maintained at the low est possible level. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 6 Product Data Sheet TGS2304-SCC TYPICAL S-PARAMETERS (through path) RF Input to RF output 3, 0 S 11 F re que nc y S 21 S 12 S 22 Ins ert io n Lo s s (GHz) M AG ANG(°) M AG ANG(°) M AG ANG(°) M AG ANG(°) (dB ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 0.03 0.03 0.04 0.04 0.05 0.05 0.06 0.07 0.08 0.10 0.12 0.14 0.15 0.15 0.15 0.15 0.13 0.12 0.11 0.11 0.12 0.13 0.14 0.14 0.13 0.11 0.09 0.06 0.10 0.15 0.18 0.21 0.23 0.24 0.24 0.25 0.27 0.31 0.34 0.39 -36 -63 90 -106 -117 -117 -114 -111 -112 -117 -126 -136 -146 -154 -163 -169 -171 -166 -162 -158 -161 -167 -175 176 165 158 160 -171 -133 -129 -131 -137 -145 -152 -159 -166 -165 -161 -154 -156 0.962 0.963 0.959 0.959 0.961 0.960 0.957 0.955 0.955 0.951 0.948 0.945 0.940 0.937 0.935 0.935 0.932 0.938 0.937 0.937 0.935 0.932 0.930 0.927 0.927 0.927 0.927 0.926 0.920 0.917 0.916 0.909 0.904 0.900 0.897 0.893 0.887 0.871 0.854 0.833 -6 -11 -17 -23 -28 -34 -40 -46 -51 -57 -63 -69 -75 -80 -86 -91 -97 -102 -108 -114 -120 -126 -132 -138 -144 -150 -156 -163 -169 -175 179 172 166 159 152 145 137 130 122 118 0.960 0.963 0.961 0.959 0.958 0.959 0.957 0.954 0.953 0.951 0.948 0.946 0.941 0.937 0.933 0.932 0.933 0.939 0.936 0.936 0.933 0.931 0.929 0.924 0.926 0.926 0.926 0.925 0.919 0.915 0.913 0.908 0.902 0.899 0.896 0.892 0.885 0.872 0.845 0.839 -6 -11 -17 -23 -28 -34 -40 -45 -51 -57 -63 -69 -74 -80 -86 -91 -97 -102 -108 -114 -120 -126 -132 -138 -144 -150 -156 -163 -169 -175 179 172 166 159 152 145 138 130 123 119 0.04 0.05 0.07 0.08 0.09 0.09 0.09 0.08 0.09 0.11 0.13 0.15 0.17 0.18 0.18 0.18 0.16 0.14 0.12 0.11 0.11 0.13 0.14 0.15 0.15 0.13 0.10 0.06 0.04 0.09 0.13 0.16 0.18 0.19 0.20 0.21 0.23 0.27 0.31 0.36 -45 -59 -65 -69 -74 -82 -94 -110 -129 -143 -152 -159 -164 -167 -171 -175 177 169 157 142 130 120 112 108 106 103 96 75 -4 -44 -57 -63 -68 -72 -77 -87 -104 -124 -143 -156 0.3 0.3 0.4 0.4 0.3 0.4 0.4 0.4 0.4 0.4 0.5 0.5 0.5 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.7 0.7 0.7 0.7 0.7 0.7 0.8 0.8 0.8 0.9 0.9 0.9 1.0 1.0 1.2 1.4 1.6 TA = 25OC, I = 10 mA The reference planes for S-parameter data include bond wires as specified in the test assembly diagram. The S-parameters are also available on floppy disk and the world wide web. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 7 Product Data Sheet TGS2304-SCC TYPICAL S-PARAMETERS (isolated path) RF Input to RF output 3 S 11 F re que nc y S 21 S 12 S 22 Is o la tio n (GHz) M AG ANG(°) M AG ANG(°) M AG ANG(°) M AG ANG(°) (dB ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 0.06 0.06 0.05 0.04 0.06 0.02 0.08 0.07 0.05 0.08 0.08 0.07 0.12 0.13 0.05 0.11 0.04 0.06 0.08 0.09 0.10 0.14 0.12 0.10 0.13 0.09 0.09 0.09 0.18 0.22 0.07 0.22 0.08 0.28 0.08 0.24 0.40 0.16 0.51 0.43 15 -2 -22 -5 -52 -34 -57 -103 -95 -112 -131 -149 -140 173 -169 177 170 -153 -141 -164 -171 165 97 141 69 32 -42 -84 -78 -148 -79 -128 76 -97 -140 -90 -133 -156 -141 -164 0.0005 0.0011 0.0017 0.0023 0.0029 0.0037 0.0041 0.0046 0.0054 0.0058 0.0064 0.0070 0.0076 0.0082 0.0095 0.0092 0.0103 0.0109 0.0115 0.0120 0.0123 0.0123 0.0134 0.0132 0.0153 0.0167 0.0179 0.0178 0.0188 0.0159 0.0197 0.0188 0.0220 0.0229 0.0197 0.0257 0.0238 0.0232 0.0247 0.0201 -87 -113 -132 -151 -160 -168 -180 175 167 163 158 154 151 151 143 140 138 135 130 126 127 124 126 123 125 120 113 109 104 102 103 95 101 76 89 77 61 71 44 48 0.0005 0.0011 0.0017 0.0023 0.0029 0.0037 0.0041 0.0046 0.0054 0.0058 0.0064 0.0070 0.0076 0.0082 0.0095 0.0092 0.0103 0.0109 0.0115 0.0120 0.0123 0.0123 0.0134 0.0132 0.0153 0.0167 0.0179 0.0178 0.0188 0.0159 0.0197 0.0188 0.0220 0.0229 0.0197 0.0257 0.0238 0.0232 0.0247 0.0201 -75 -119 -129 -149 -162 -170 -180 175 168 161 157 155 150 150 142 141 138 135 130 126 128 124 126 122 125 121 113 109 102 102 104 95 102 76 89 77 62 72 46 48 0.90 0.90 0.88 0.87 0.87 0.86 0.87 0.87 0.88 0.88 0.88 0.89 0.88 0.88 0.88 0.88 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.88 0.87 0.86 0.86 0.85 0.86 0.85 0.85 0.85 0.85 0.86 0.86 0.85 0.86 0.83 177 173 169 166 163 158 153 148 144 141 138 136 133 129 126 123 119 114 111 107 102 96 90 86 84 83 82 78 73 67 62 56 52 48 46 43 39 31 23 18 66.3 59.2 55.2 52.8 50.8 48.6 47.7 46.7 45.4 44.7 43.9 43.1 42.4 41.7 40.4 40.7 39.7 39.3 38.8 38.4 38.2 38.2 37.5 37.6 36.3 35.6 34.9 35.0 34.5 36.0 34.1 34.5 33.2 32.8 34.1 31.8 32.5 32.7 32.2 33.9 TA = 25OC, I = 10 mA The reference planes for S-parameter data include bond wires as specified in the test assembly diagram. The S-parameters are also available on floppy disk and the world wide web. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 8 Product Data Sheet TGS2304-SCC TYPICAL S-PARAMETERS (through path) RF Input to RF output 2, 1 S 11 F re que nc y S 21 S 12 S 22 Ins ertio n Lo s s (GHz) M AG ANG(°) M AG ANG(°) M AG ANG(°) M AG ANG(°) (dB ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 0.03 0.03 0.04 0.05 0.05 0.05 0.04 0.04 0.04 0.06 0.07 0.08 0.10 0.11 0.11 0.11 0.09 0.07 0.05 0.04 0.04 0.05 0.06 0.06 0.06 0.05 0.02 0.04 0.07 0.11 0.16 0.19 0.20 0.21 0.20 0.20 0.19 0.21 0.25 0.30 -26 -41 -51 -56 -62 -67 -76 -91 -107 -123 -133 -142 -150 -154 -155 -158 -164 -175 162 144 143 146 133 110 95 92 139 -143 -113 -93 -90 -94 -103 -108 -113 -122 -142 -167 -178 -174 0.962 0.962 0.962 0.962 0.960 0.960 0.960 0.957 0.958 0.954 0.952 0.948 0.949 0.946 0.941 0.940 0.940 0.941 0.940 0.939 0.939 0.940 0.936 0.935 0.933 0.933 0.934 0.933 0.928 0.924 0.912 0.908 0.908 0.907 0.905 0.906 0.909 0.896 0.891 0.871 -6 -12 -18 -24 -29 -35 -41 -48 -53 -59 -65 -71 -77 -83 -89 -95 -101 -106 -112 -118 -124 -130 -136 -143 -149 -155 -161 -167 -174 180 174 168 161 154 148 141 135 127 120 113 0.964 0.963 0.963 0.962 0.960 0.959 0.957 0.957 0.956 0.954 0.952 0.951 0.945 0.946 0.944 0.940 0.940 0.940 0.939 0.937 0.940 0.938 0.939 0.935 0.933 0.932 0.932 0.932 0.931 0.921 0.914 0.907 0.907 0.908 0.907 0.907 0.904 0.900 0.883 0.882 -6 -12 -18 -24 -30 -35 -41 -47 -53 -59 -65 -71 -77 -83 -89 -95 -101 -106 -112 -118 -124 -130 -137 -143 -149 -155 -161 -167 -174 180 174 168 161 155 148 141 134 127 120 114 0.03 0.03 0.03 0.03 0.04 0.04 0.05 0.06 0.07 0.08 0.09 0.11 0.12 0.13 0.13 0.13 0.12 0.11 0.11 0.10 0.10 0.09 0.10 0.11 0.11 0.10 0.05 0.01 0.04 0.09 0.14 0.17 0.18 0.18 0.18 0.17 0.17 0.19 0.22 0.26 -33 -49 -61 -72 -81 -86 -91 -99 -109 -123 -136 -147 -157 -166 -176 176 172 178 -176 -175 178 165 156 155 152 145 128 66 -84 -111 -123 -130 -129 -133 -138 -143 -133 -125 -130 -151 0.3 0.3 0.3 0.3 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.7 0.8 0.8 0.8 0.8 0.9 0.9 0.8 1.0 1.0 1.2 TA = 25OC, I = 10 mA The reference planes for S-parameter data include bond wires as specified in the test assembly diagram. The S-parameters are also available on floppy disk and the world wide web. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 9 Product Data Sheet TGS2304-SCC TYPICAL S-PARAMETERS (isolated path) RF Input to RF output 2, 1 S 11 F re que nc y S 21 S 12 S 22 Is o la tio n (GHz) M AG ANG(°) M AG ANG(°) M AG ANG(°) M AG ANG(°) (dB) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 0.06 0.06 0.08 0.07 0.12 0.06 0.09 0.09 0.07 0.11 0.13 0.12 0.16 0.18 0.12 0.19 0.10 0.10 0.10 0.12 0.15 0.21 0.14 0.18 0.13 0.07 0.03 0.11 0.15 0.31 0.12 0.28 0.17 0.26 0.18 0.20 0.39 0.27 0.55 0.55 10 -35 -69 -80 -88 -102 -77 -106 -102 -117 -135 -150 -141 -172 -155 -169 -177 -156 -139 -148 -150 -170 151 172 122 115 -134 -145 -112 -152 -153 -141 139 -108 -178 -110 -143 173 -160 178 0.0003 0.0002 0.0001 0.0004 0.0007 0.0011 0.0017 0.0022 0.0029 0.0032 0.0036 0.0040 0.0048 0.0047 0.0059 0.0059 0.0061 0.0062 0.0072 0.0075 0.0073 0.0076 0.0066 0.0067 0.0059 0.0057 0.0061 0.0065 0.0066 0.0077 0.0070 0.0075 0.0086 0.0102 0.0073 0.0057 0.0050 0.0055 0.0065 0.0070 127 98 -70 147 156 163 155 145 138 130 124 120 115 108 109 93 91 90 86 77 70 59 47 51 44 44 43 38 35 28 20 22 14 -5 -25 -22 -20 -14 -23 -28 0.0003 0.0002 0.0001 0.0004 0.0007 0.0011 0.0017 0.0022 0.0029 0.0032 0.0036 0.0040 0.0048 0.0047 0.0059 0.0059 0.0061 0.0062 0.0072 0.0075 0.0073 0.0076 0.0066 0.0067 0.0059 0.0057 0.0061 0.0065 0.0066 0.0077 0.0070 0.0075 0.0086 0.0102 0.0073 0.0057 0.0050 0.0055 0.0065 0.0070 59 48 -112 159 161 161 149 140 139 130 123 120 113 110 108 94 91 90 85 76 70 61 48 53 44 44 43 39 34 27 20 22 13 -5 -24 -24 -18 -16 -27 -29 0.90 0.90 0.89 0.88 0.87 0.87 0.87 0.87 0.88 0.88 0.88 0.89 0.89 0.89 0.89 0.88 0.89 0.88 0.88 0.88 0.87 0.88 0.88 0.89 0.88 0.89 0.87 0.88 0.87 0.87 0.85 0.87 0.85 0.87 0.87 0.87 0.88 0.86 0.89 0.85 177 173 169 165 162 158 155 151 147 143 140 137 134 132 128 124 121 118 115 111 107 103 101 100 98 94 88 81 76 72 71 66 64 62 63 59 52 39 29 27 70.3 74.0 79.3 68.0 63.1 59.2 55.4 53.2 50.9 49.9 48.8 48.0 46.4 46.6 44.6 44.6 44.3 44.2 42.9 42.5 42.7 42.4 43.6 43.5 44.5 44.9 44.3 43.7 43.6 42.3 43.1 42.5 41.3 39.8 42.7 44.9 46.1 45.2 43.7 43.1 TA = 25OC, I = 10 mA The reference planes for S-parameter data include bond wires as specified in the test assembly diagram. The S-parameters are also available on floppy disk and the world wide web. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 10 Product Data Sheet TGS2304-SCC RF CHARACTERISTICS IL ISO SWR(in) SWR(out) P1dB(in) PARAMETER Insertion loss Isolation Input standing–w ave ratio Output standing–w ave ratio Input pow er at 1–dB gain compression TEST CONDITIONS TYP Midband 0.6 Midband 38 Midband 1.2:1 Through selected output arm, midband 1.2:1 23 TA = 25OC EQUIVALENT SCHEMATIC RECOMMENDED TEST CONFIGURATION TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 11 Product Data Sheet TGS2304-SCC FUNCTION TABLE LOW–LOS S P ATH RF Input to RF Input to RF Input to RF Input to RF Output 0 RF Output 1 RF Output 2 RF Output 3 R F INP UT RF OUTP UT 0 RF OUTP UT 1 RF OUTP UT 2 R F OUTP UT 3 0 0 0 0 V V V V -10 mA 10 mA 10 mA 10 mA 10 mA -10 mA 10 mA 10 mA 10 mA 10 mA -10 mA 10 mA 10 mA 10 mA 10 mA -10 mA TEST ASSEMBLY DIAGRAM RF connections: bond using three 1.0-mil diameter, 20 to 25-mil-length gold bond wires at both RF Input and RF Output for optimum RF performance. Close placement of external components is essential for resonant-free performance. Refer to TriQuint’s Gallium Arsenide Products Designer’s Information, MMIC Assembly Procedures, on our web site. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 12 Product Data Sheet TGS2304-SCC MECHANICAL DRAWING TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 13 Product Data Sheet TGS2304-SCC Application Notes: INTRODUCTION CONNECTION INSTRUCTIONS Driver Circuit for 2300 Series GaAs PIN Diode Switches This section describes how a single 5 V power supply and a 74F24ON line driver are used in a driver circuit for the TGS2304 PIN-diode switch. The PIN switch must be mounted on a silicon MOS capacitor (MOSCAP or equivalent) of approximately 1000 pF (see Mounting Diagram, page 15). Eight separate drivers are provided in a single ‘F240 DIP (see Driver Circuit, page 15). In addition, the ‘F240 can be set to provide an inverted or a non-inverted output. The inverted is preferred in this application because it allows the 1G pin to be tied to ground instead of 5 V, eliminating the use of an extra power supply. The 74BCT240, 74BCT240N, and 74S240N also work with this driver circuit. The Interface Schematic (see page 16) shows a voltage divider that can be used to provide approximately 2 V to the RF Input (common) port of the TGS2304-SCC. This bias voltage should be connected to the RF Input through a bias tee or some equivalent RF choke/DC block network. Connect this same bias voltage to the top plate of the MOSCAP through a ~3-nH coil bonded to MMIC ground pad as shown in the Interface Schematic and RF Input Bias Coil Assembly (both on page 16). Care should be taken not to bond the inductor close to the via, as this could result in device damage. The ground pad is connected to the backside of the TGS2304-SCC by plated-through vias. This sets the top plate of the MOSCAP to 2 V, effectively providing a 2 V reference for the RF input port and the cathodes of the two shunt diodes in each arm. The bottom plate of the MOSCAP is true DC ground. Connect the four RF Output ports of the TGS2304-SCC to the ‘F240 outputs through a bias tee or some equivalent RF choke/DC block, as shown in the Interface Schematic on page 16. OPERATING INSTRUCTIONS For proper switch operation, only one arm should be turned on at any one time as shown in the Control Logic Table on page 15. The following description of how the driver circuit controls one arm of the TGS2304-SCC applies to all arms. To turn an arm on: A TTL high at the ‘F240 input results in approximately 0.3 V at the corresponding output. This is applied to the appropriate RF Output port. Since the RF Input port of the TGS2304-SCC is at 2 V, the arm is turned on. The series diode in that arm is forward biased by approximately 1.7 V, and the two shunt diodes are reverse biased (off) by 1.7 V. Under these conditions, the bias current is typically 12 mA and midband insertion loss is typically 0.9 dB. To turn an arm off: A TTL low at the ‘F240 input results in approximately 3.1 V at the corresponding output. This is applied to the appropriate RF Output port. Since the RF Input port of the TGS2304-SCC is at 2 V, the arm is turned off. The series diode in that arm is reverse biased by approximately 1.1 V, and the shunt diodes in that arm are forward biased (on) by 1.1 V. Under these conditions, the bias current is typically 9 mA and the midband isolation is typically 40 dB. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 14 Product Data Sheet TGS2304-SCC DRIVER VOLTAGE AP P LIED AT R F CONTROL LOGIC TABLE TGS2304–SCC R F SWITC H AR M S 0 1 2 3 0 1 2 3 L H H H ON OFF OFF OFF H L H H OFF ON OFF OFF H H L H OFF OFF ON OFF H H H L OFF OFF OFF ON L = low (typically 0.3 V), H = high (typically 3.1 V) MOUNTING DIAGRAM DRIVER CIRCUIT TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 15 Product Data Sheet TGS2304-SCC INTERFACE SCHEMATIC RF INPUT BIAS COIL ASSEMBLY GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 16