N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS107P ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23Ω D G REFER TO BS107PT FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25°C ID 0.12 A Pulsed Drain Current IDM 2 A Gate-Source Voltage VGS ±20 V Power Dissipation at Tamb =25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. Drain-Source Breakdown Voltage BVDSS 200 230 Gate Body Leakage IGSS Drain Cut-Off Current UNIT CONDITIONS. V ID=100µA, VGS=0V 10 nA VGS=15V, VDS=0V IDSS 30 nA VGS=0V, VDS=130V Drain Cut-Off Current IDSX 1 µA VGS=0.2V, VDS=70V Static Drain-Source on-State Resistance RDS(on) 23 30 Ω Ω VGS=2.6V, ID=25mA* VGS=5V, ID=100mA* 15 MAX. * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-23