SEMICONDUCTOR TECHNICAL DATA KDV240E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF Band Radio. Low Series Resistance : rs=0.28 (Typ.) Useful for Small Size Tuner. 1 A High Capacitance Ratio : C1V/C4V =2.1(Typ.) E C B CATHODE MARK FEATURES 2 D MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range F DIM A B C D E F 1. ANODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + 2. CATHODE ESC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=1 A 10 - - V Reverse Current IR VR=10V - - 3 nA C1V VR=1V, f=1MHz 9.7 - 11.1 C4V VR=4V, f=1MHz 4.45 - 5.45 Capacitance Ratio K C1V/C4V, f=1MHz 1.8 2.1 - Series Resistance rS VR=1V, f=470MHz - 0.28 0.4 Capacitance Marking pF Type Name EC 2003. 1. 27 Revision No : 0 1/2 KDV240E C T - VR r s - VR 0.4 f=1MHz Ta=25 C 50 SERIES RESISTANCE r s (Ω) CAPACITANCE CT (pF) 100 30 10 5 3 1 0 1 2 3 4 REVERSE VOLTAGE VR (V) 2003. 1. 27 Revision No : 0 5 6 f=470MHz Ta=25 C 0.3 0.2 0.1 0 0.1 0.3 0.5 1 3 5 10 REVERSE VOLTAGE VR (V) 2/2