SEMICONDUCTOR KDV386S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =1.8 (Min.) Low Series Resistance. : rS=0.9 E B L L (Max.) D Good C-V Linearity. H MAXIMUM RATING (Ta=25 3 G A 2 1 ) RATING UNIT Reverse Voltage VR 15 V Junction Temperature Tj 150 Tstg -55 150 K J SYMBOL C CHARACTERISTIC P N P DIM A MILLIMETERS _ 0.20 2.93 + B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 0.20 MIN 1.00+0.20/-0.10 7 M N P M 3 Storage Temperature Range 1. NC 2. ANODE 3. CATHODE 2 1 SOT-23 Marking Lot No. Type Name VB ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. IR1 VR=15V - - 10 IR2 VR=15V, Ta=60 - - 100 C1V VR=1V, f=1MHz 43.0 - 49.0 C4V VR=4V, f=1MHz 18.5 - 25.5 1.8 - - - - 0.9 Reverse Current nA Capacitance pF Capacitance Ratio C1V/C4V Series Resistance rS 2007. 10. 31 UNIT Revision No : 0 VR=5V, f=470MHz - 1/2 KDV386S CT - VR IR - VR 10 10 10 10 -10 TOTAL CAPACITANCE CT (pF) REVERSE CURRENT IR (A) 10 -11 -12 -13 -14 0 5 10 15 40 30 20 10 0 0.5 1.0 10 REVERSE VOLTAGE VR (V) rs - VR ∆(LOG CT ) / ∆(LOG VR ) - VR 30 0 f=470MHz ∆(LOG CT ) / ∆(LOG VR ) SERIES RESISTANCE rs (Ω) f=1MHz 50 REVERSE VOLTAGE VR (V) 1.0 0.8 0.6 0.4 0.2 0 0.5 1.0 10 REVERSE VOLTAGE VR (V) 2007. 10. 31 60 Revision No : 0 30 -0.5 -1.0 -1.5 -2.0 0.5 1.0 10 30 REVERSE VOLTAGE VR (V) 2/2