SEMICONDUCTOR KDV258E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. Low Series Resistance : rs=0.45 (Max.) E C 1 A High Capacitance Ratio : C1V/C4V =2.0(Min.) B CATHODE MARK FEATURES 2 MAXIMUM RATING (Ta=25 ) D F CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 15 V Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range DIM A B C D E F 1. ANODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + 2. CATHODE ESC ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=1 A 15 - - V Reverse Current IR VR=10V - - 10 nA Capacitance C1V VR=1V, f=1MHz 19.0 - 21.0 C4V VR=4V, f=1MHz 8.5 - 10.0 2.0 - - - - 0.45 pF Capacitance Ratio K - Series Resistance rS VR=1V, f=470MHz Marking Type Name U6 2003. 3. 25 Revision No : 0 1/2 KDV258E I R - VR C - VR 100 f=1MHz Ta=25 C Ta=25 C CAPACITANCE C (pF) REVERSE CURRENT I R (pA) 1K 100 1 10 0 2 4 6 8 10 12 REVERSE VOLTAGE VR (V) 2003. 3. 25 10 Revision No : 0 14 16 0 5 10 15 20 REVERSE VOLTAGE VR (V) 2/2