FDA8440 N-Channel PowerTrench® MOSFET tm 40V, 100A, 2.1mΩ Features Application • RDS(on) = 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Electronic Steering • 160A Guarantee for 2 sec • Integrated Starter/ Alternator • RoHS Compliant • Distributed Power Architectures and VRMs • Primary Switch for 12V systems D G TO-3PN G DS S MOSFET Maximum Ratings T C Symbol = 25oC unless otherwise noted Ratings Units VDSS Drain to Source Voltage 40 V VGSS Gate to Source Voltage ±20 V 100 A - Continuous (TA = 25 C, VGS = 10V, RθJA = 40 C/W ) 30 A - Pulsed 500 A 410 mJ ID EAS PD TJ, TSTG Parameter Drain Current - Continuous (TC = 145oC) o o Single Pulsed Avalanche Energy (Note 1) Power dissipation 250 W Derate above 25oC 1.67 mW/oC -55 to +175 oC Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient ©2007 Fairchild Semiconductor Corporation FDA8440 Rev. A (Note 2) 1 0.6 o C/W 40 o C/W www.fairchildsemi.com FDA8440 N-Channel PowerTrench® MOSFET March 2007 Device Marking Device Package Reel Size Tape Width Quantity FDA8440 FDA8440 TO-3PN N/A N/A 30units Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units 40 -- -- V -- -- 1 μA Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0V, ID = 250μA VDS = 32V VGS = 0V 150oC -- -- 250 μA VGS = ±20V -- -- ±100 nA VDS = VGS, ID = 250μA 1 -- 3 V VGS = 4.5V, ID = 80A -- 1.56 2.2 VGS = 10V, ID = 80A -- 1.46 2.1 VGS = 10V, ID = 80A, TC = 175oC -- 2.82 4.1 TC = On Characteristics VGS(th) Gate to Source Threshold Voltage RDS(on) Static Drain-Source On-Resistance mΩ Dynamic Characteristics Ciss Input Capacitance -- 18600 24740 pF VDS = 25V, VGS = 0V, f = 1.0MHz Coss Output Capacitance Crss Reverse Transfer Capacitance -- 1840 2450 pF -- 1400 2100 pF RG Qg(tot) Gate Resistance VGS = 0.5V, f = 1MHz -- 1.1 -- Ω Total Gate Charge at 10V VGS = 0V to 10V -- 345 450 nC Qg(2) Threshold Gate Charge VGS = 0V to 2V VDD = 20V -- 32.5 -- nC Qgs Gate to Source Gate Charge ID = 80A -- 49 -- nC Qgs2 Gate Charge Threshold to Plateau Ig = 1.0mA -- 42 -- nC Qgd Gate to Drain “Miller” Charge -- 74 -- nC -- 175 360 ns Switching Characteristics (VGS = 10V) tON Turn-On Time td(on) Turn-On Delay Time tr Rise Time td(off) tf tOFF -- 43 95 ns -- 130 275 ns Turn-Off Delay Time -- 435 875 ns Fall Time -- 290 590 ns Turn-Off Time -- 730 1470 ns ISD = 80A -- -- 1.25 V ISD = 40A -- -- 1.0 V VDD = 20V,ID = 80A VGS = 10V, RGEN = 7Ω Drain-Source Diode Characteristics and Maximum Ratings VSD Source to Drain Diode Voltage trr Reverse Recovery Time ISD = 75A, dISD/dt = 100A/μs -- 59 -- ns QRR Reverse Recovery Charge ISD = 75A, dISD/dt = 100A/μs -- 77 -- nC NOTES: 1: Starting TJ = 25°C, L = 200μH, IAS = 64A, VDD = 36V, VGS = 10V. 2: Pulse width = 100s FDA8440 Rev. A 2 www.fairchildsemi.com FDA8440 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 400 100 ID,Drain Current[A] ID,Drain Current[A] 100 VGS = 10.0 V 7.0 V 5.0 V 3.5 V 3.0 V 2.5 V 10 o 150 C o -55 C 10 o 25 C * Notes : 1. 250μs Pulse Test 1 * Notes : 1. VDS = 20V 2. 250μs Pulse Test o 0.4 0.04 2. TC = 25 C 0.1 VDS,Drain-Source Voltage[V] 1 1 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 6 1000 VGS = 4.5V IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 2 4 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.60 1.55 1.50 VGS = 10V 1.45 100 o 150 C o 25 C 10 Notes: 1. VGS = 0V o * Note : TJ = 25 C 0 50 100 150 ID, Drain Current [A] 200 2. 250μs Pulse Test 1 0.3 250 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Ciss 18000 12000 * Note: 1. VGS = 0V 2. f = 1MHz Coss 1.2 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 24000 0.6 0.9 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 30000 Capacitances [pF] 0 6000 VDS = 25V VDS = 20V VDS = 15V 8 6 4 2 Crss 0 -1 10 FDA8440 Rev. A 0 10 VDS, Drain-Source Voltage [V] 1 10 0 20 3 * Note : ID = 80A 0 100 200 300 Qg, Total Gate Charge [nC] 400 www.fairchildsemi.com FDA8440 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 rDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 0.5 * Notes : 1. VGS = 10V 2. ID = 80A 0.0 -100 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Safe Operating Area Figure 9. Unclamped Inductive Switching Capability 100 5000 ID, Drain Current [A] IAS, Avalanche current(A) 1000 o TJ = 25 C 10 o TJ = 150 C 100μ s 100 Operation in This Area is Limited by R DS(on) 10 1ms 10ms * Notes : 1 o 1. TC = 25 C o 1 0.1 0.1 1 10 100 1000 tAV, Time in avalanche[ms] 10000 2. TJ = 175 C 3. Single Pulse 1 100ms 10 VDS, Drain-Source Voltage [V] 50 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 t1 0.02 0.01 0.01 t2 * Notes : o 1. ZθJC(t) = 0.6 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC(t) Single pulse 1E-3 -5 10 FDA8440 Rev. A PDM 0.05 10 -4 -3 -2 10 10 Rectangular Pulse Duration [sec] 4 10 -1 10 0 www.fairchildsemi.com FDA8440 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDA8440 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDA8440 Rev. A 5 www.fairchildsemi.com FDA8440 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDA8440 Rev. A 6 www.fairchildsemi.com FDA8440 N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FDA8440 Rev. A 7 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ CTL™ Current Transfer Logic™ DOME™ E2CMOS™ EcoSPARK® EnSigna™ FACT Quiet Series™ FACT® FAST® FASTr™ FPS™ FRFET® GlobalOptoisolator™ GTO™ Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ ScalarPump™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ The Power Franchise® ™ TinyBoost™ TinyBuck™ HiSeC™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ MICROCOUPLER™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR® PACMAN™ POP™ Power220® Power247® PowerEdge™ PowerSaver™ PowerTrench® TinyLogic® TINYOPTO™ TinyPower™ TinyWire™ TruTranslation™ µSerDes™ UHC® UniFET™ VCX™ Wire™ tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I24 8 FDA8440 Rev. A www.fairchildsemi.com FDA8440 N-Channel PowerTrench® MOSFET tm