VHB1-12T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB1-12T is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE TO-39 FEATURES: • Class C Operation • PG = 10 dB at 1.0 W/175 MHz • Omnigold™ Metalization System B C 45° ØA ØD E MAXIMUM RATINGS F IC 400 mA (MAX) VCBO 40 V VCEO 20 V VCER 40 V VEBO 2.0 V PDISS 3.5 W @ TC = 25 °C MINIMUM DIM TSTG -65 °C to +200 °C θJC 20 °C/W CHARACTERISTICS inches / mm .200 / 5.080 B .029 / 0.740 .045 / 1.140 C .028 / 0.720 .034 / 0.860 D .335 / 8.510 .370 / 9.370 E .305 / 7.750 .335 / 8.500 F .240 / 6.100 .260 / 6.600 .500 / 12.700 G .016 / 0.407 H .020 / 0.508 ORDER CODE: ASI10711 TC = 25 °C NONETEST CONDITIONS SYMBOL MAXIMUM inches / mm A -65 °C to +200 °C TJ H G BVCEO IC = 5.0 mA BVCER IC = 5.0 mA BVEBO IE = 100 µA ICEO VCE = 12 V hFE VCE = 5.0 V IC = 100 mA VCE(SAT) IC = 100 mA IB = 20 mA COB VCB = 12.5 V PG ηC VCE = 12.5 V RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 20 V 40 V 2.0 V 10 f = 1.0 MHz POUT = 1.0 W f = 175 MHz UNITS 10 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.2 mA 200 --- 0.5 Vdc 4.0 pF dB % REV. B 1/1