ASI MRA1014-35

MRA1014-35
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .320 SQ 2L FLG
The ASI MRA1014-35 is Designed
for Class C, Common Base Wideband
Large Signal Amplifier Applications
From 1.0 GHz to 1.4 GHz.
C
B
FEATURES:
• Diffused Ballast Resistors.
• Internal Matching Network
• Omnigold™ Metalization System
E
MAXIMUM RATINGS
IC
5.0 A (CONT)
VCES
50 V
VEBO
3.5 V
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
2.5 °C/W
CHARACTERISTICS
NONE
TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BVCES
IC = 200 mA
50
V
BVEBO
IE = 2.5 mA
3.5
V
ICBO
VCB = 28 V
hFE
VCE = 5.0 V
Cob
VCB = 28 V
GPB
ηc
VCE = 28 V
IC = 1.0 A
10
f = 1.0 MHz
Pout = 35 W
f = 1.0 GHz & 1.4 GHz
5.0
mA
100
---
24
pF
7.0
dB
50
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1