CEM2939 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 5 20V, 6.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 43mΩ @VGS = 2.5V. -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 90mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 8 7 6 5 Lead free product is acquired. Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS 1 2 3 4 S1 G1 S2 G2 TA = 25 C unless otherwise noted Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 -20 Units V Gate-Source Voltage VGS ±12 ±12 V ID 6.5 -4.8 A IDM 20 -20 A Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Specification and data are subject to change without notice . 1 Rev 3. 2007.Feb http://www.cetsemi.com CEM2939 N-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 20 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 16V, VGS = 0V 1 µA IGSSF VGS = 12V, VDS = 0V 100 nA IGSSR VGS = -12V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA 1.5 V VGS = 4.5V, ID = 6.5A 0.55 25 30 mΩ VGS = 2.5V, ID = 5.4A 35 43 mΩ Dynamic Characteristics d Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 5V, ID = 6.5A VDS = 8V, VGS = 0V, f = 1.0 MHz 17 S 910 pF 230 pF 163 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 15V, ID = 1A, VGS = 4.5V, RGEN =6Ω 14 30 ns 10 20 ns 34 70 ns Turn-Off Fall Time tf 11 20 ns Total Gate Charge Qg 10 13 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 10V, ID =6.5A, VGS = 4.5V 1.4 nC 3.2 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 1.3A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 6.5 A 1.2 V CEM2939 P-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -20 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -16V, VGS = 0V -1 µA IGSSF VGS = 12V, VDS = 0V 100 nA IGSSR VGS = -12V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = -250µA -1.5 V VGS = -4.5V, ID = -3.2A -0.55 43 55 mΩ VGS = -2.5V, ID = -1.0A 64 90 mΩ Dynamic Characteristics d Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -5V, ID = -5.5A VDS = -10V, VGS = 0V, f = 1.0 MHz 10 S 1155 pF 205 pF 120 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -10V, ID = -4A, VGS = -4.5V, RGEN = 3Ω 13.4 26.8 ns 8.4 16.8 ns 73.4 146.8 ns Turn-Off Fall Time tf 34.4 68.8 ns Total Gate Charge Qg 9.8 13 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -10V, ID = -4A, VGS = -4.5V 1.2 nC 2.7 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -2.0A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 3 -4.8 A -1.2 V CEM2939 N-CHANNEL 20 20 25 C 16 ID, Drain Current (A) ID, Drain Current (A) VGS=4.5,3.5,3.0,2.5V 12 VGS=2.0V 8 4 0 0.0 1.0 1.5 1.5 2.0 2.5 3.0 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Ciss 800 600 400 Coss Crss 0 0 2 4 6 8 10 2.2 1.9 ID=6.5A VGS=4.5V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -55 C VDS, Drain-to-Source Voltage (V) RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) TJ=125 C 4 1.0 200 VTH, Normalized Gate-Source Threshold Voltage 8 2.0 1000 1.2 5 12 0 0.5 1200 1.3 16 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 4 CEM2939 P-CHANNEL 15 15 25 C -VGS=2.5V 12 -ID, Drain Current (A) -ID, Drain Current (A) -VGS=4.5,-4.0,-3.5V 9 -VGS=2V 6 3 0 0 0.5 1 1.5 2 1 2 3 4 5 Figure 8. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 800 Coss 400 Crss 2 4 6 8 10 12 2.2 1.9 ID=-3.2A VGS=-4.5V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 9. Capacitance Figure 10. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 0 Figure 7. Output Characteristics Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -55 C TJ=125 C -VGS, Gate-to-Source Voltage (V) 1200 1.2 3 -VDS, Drain-to-Source Voltage (V) 1600 1.3 6 0 2000 0 9 2.5 2400 0 12 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 11. Gate Threshold Variation with Temperature Figure 12. Body Diode Forward Voltage Variation with Source Current 5 CEM2939 10 5 V =10V DS ID=6.5A 4 3 2 1 0 0 2 4 6 8 10ms 10 0 10 -1 -2 1s DC TA=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 VDS, Drain-Source Voltage (V) Figure 13. Gate Charge Figure 14. Maximum Safe Operating Area 10 2 10 1 10 2 10 2 RDS(ON)Limit 4 3 2 1 2.5 5 100ms Qg, Total Gate Charge (nC) -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) 1 10 5 V =-10V DS ID=-4A 0 10 10 10 P-CHANNEL 0 2 RDS(ON)Limit ID, Drain Current (A) VGS, Gate to Source Voltage (V) N-CHANNEL 5 7.5 10 0 10 -1 10 10 10ms 100ms -2 10 1s DC TA=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 15. Gate Charge Figure 16. Maximum Safe Operating Area 6 CEM2939 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 18. Switching Waveforms Figure 17. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7 10 1 10 2