CED4279/CEU4279 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1/D2 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. S1 D1/D2 Lead free product is acquired. S2 S1 G1 TO-252-4L package. S2 G2 CEU SERIES TO-252-4L ABSOLUTE MAXIMUM RATINGS Parameter Tc = 25 C unless otherwise noted Symbol N-Channel 40 P-Channel 40 Units V VGS ±20 ±20 V ID e 14 -9 A IDM 56 Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous e Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range -36 A 10.4 W 0.08 W/ C TJ,Tstg -55 to 150 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 12 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W Rev 2. 2007.Jan http://www.cetsemi.com Details are subject to change without notice . 1 CED4279/CEU4279 N-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 40 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 40V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Dynamic Characteristics VGS = VDS, ID = 250µA 3 V VGS = 10V, ID = 8A 1 25 32 mΩ VGS = 4.5V, ID = 6A 35 46 mΩ d Forward Transconductance gFS c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 5V, ID = 8A VDS = 20V, VGS = 0V, f = 1.0 MHz 10 S 1055 pF 160 pF 100 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 20V, ID = 6A, VGS = 10V, RGEN = 3Ω 15 30 ns 11 22 ns 18 36 ns Turn-Off Fall Time tf 19 38 ns Total Gate Charge Qg 10 13.3 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 20V, ID = 6A, VGS = 4.5V 3.7 nC 4.2 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 1A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A. 2 8 A 1.2 V CED4279/CEU4279 P-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -40 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -40V, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = -250µA -4 V VGS = -10V, ID = -8A -2 60 72 mΩ VGS = -4.5V, ID = -6A 90 110 mΩ Dynamic Characteristics d Forward Transconductance c gFS c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -5V, ID = -8A VDS = -20V, VGS = 0V, f = 1.0 MHz 10 S 710 pF 130 pF 80 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 11 22 ns 3 6 ns 32 64 ns Turn-On Fall Time tf 5 10 ns Total Gate Charge Qg 5.8 7.7 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -20V, ID = -4.5A, VGS = -4.5V 1.9 nC 2.5 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -1A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A. 3 -8 A -1.2 V CED4279/CEU4279 N-CHANNEL 10 50 25 C 8 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6V 6 4 2 40 5 30 20 10 TJ=125 C VGS=3.0V 0 0 1 2 3 4 0 5 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 750 500 Coss 250 Crss 0 5 10 15 20 25 2.2 1.9 ID=8A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 8 Figure 2. Transfer Characteristics Ciss 1.1 1.0 0.9 0.8 0.7 0.6 -50 6 Figure 1. Output Characteristics 1000 1.2 4 VGS, Gate-to-Source Voltage (V) 1250 1.3 2 VDS, Drain-to-Source Voltage (V) 1500 0 0 -55 C -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 4 CED4279/CEU4279 P-CHANNEL 15 -VGS=10,8V 20 -ID, Drain Current (A) -ID, Drain Current (A) 25 -VGS=5.0V 15 10 -VGS=4.0V 5 0 0 0.5 1 1.5 2 TJ=125 C 0 -55 C 2 4 6 8 Figure 7. Output Characteristics Figure 8. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 450 300 Coss 150 Crss 0 5 10 15 20 25 2.2 1.9 ID=-8A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 9. Capacitance Figure 10. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 3 -VGS, Gate-to-Source Voltage (V) Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 6 0 600 1.2 9 -VDS, Drain-to-Source Voltage (V) 750 1.3 12 2.5 900 0 25 C -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 11. Gate Threshold Variation with Temperature Figure 12. Body Diode Forward Voltage Variation with Source Current 5 CED4279/CEU4279 10 5 V =20V DS ID=6A 4 3 2 1 0 0 2 4 6 8 10 10 0 10 -1 -2 1ms 10ms TC=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 VDS, Drain-Source Voltage (V) Figure 13. Gate Charge Figure 14. Maximum Safe Operating Area 10 2 10 2 10 2 RDS(ON)Limit 4 3 2 1 1 5 100ms DC Qg, Total Gate Charge (nC) -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) 1 10 5 V =20V DS ID=4.5A 0 10 10 12 P-CHANNEL 0 2 RDS(ON)Limit ID, Drain Current (A) VGS, Gate to Source Voltage (V) N-CHANNEL 2 3 4 5 10 1 10 0 10 -1 10 6 -2 10 1ms 10ms 100ms DC TC=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 15. Gate Charge Figure 16. Maximum Safe Operating Area 6 CED4279/CEU4279 VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 18. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 17. Switching Test Circuit 10 0 D=0.5 0.2 10 PDM 0.1 -1 t1 0.05 0.02 0.01 Single Pulse 10 -2 10 -2 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7 10 3 10 4