CEM6659 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 5 60V, 4.1A, RDS(ON) = 68mΩ @VGS = 10V. RDS(ON) = 86mΩ @VGS = 4.5V. -60V, -3.1A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS 1 2 3 4 S1 G1 S2 G2 TA = 25 C unless otherwise noted Symbol N-Channel P-Channel Drain-Source Voltage VDS 60 -60 Units V Gate-Source Voltage VGS ±20 ±20 V ID 4.1 -3.1 A IDM 15 -12 A Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2006.May http://www.cetsemi.com CEM6659 N-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 60 Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V Gate Body Leakage Current, Forward IGSSF Gate Body Leakage Current, Reverse IGSSR VGS(th) VGS = VDS, ID = 250µA Typ Max Units 1 µA VGS = 20V, VDS = 0V 100 µA VGS = -20V, VDS = 0V -100 µA Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source RDS(on) On-Resistance Dynamic Characteristics 3 V VGS = 10V, ID = 4.1A 1 56 68 mΩ VGS = 4.5V, ID = 3.5A 66 86 mΩ d Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 10V, ID = 4.1A VDS = 25V, VGS = 0V, f = 1.0 MHz 5 S 670 pF 80 pF 45 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 30V, ID = 1A, VGS = 10V, RGEN = 6Ω 11 25 ns 3 10 ns 30 60 ns Turn-Off Fall Time tf 3 10 ns Total Gate Charge Qg 13 17 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 30V, ID = 4.1A, VGS = 10V 1.7 nC 2.6 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c IS VSD VGS = 0V, IS = 2A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 4.1 A 1.2 V CEM6659 P-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -60 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -60V, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = -250µA -3 V VGS = -10V, ID = -3.1A -1 100 130 mΩ VGS = -4.5V, ID = -2.8A 130 170 mΩ VDS = -10V, ID = -3.1A 5 S 885 pF 85 pF 80 pF Dynamic Characteristics c Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -30V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6Ω 12 25 ns 4 15 ns 38 80 ns Turn-Off Fall Time tf 12 25 ns Total Gate Charge Qg 11 14 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -30V, ID = -3.1A, VGS = -10V 2.4 nC 1.6 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = -1.3A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 3 -3.1 A -1.2 V 6 CEM6659 N-CHANNEL 25 10 25 C 20 VGS=4.0V 15 8 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6,5V 10 5 6 4 2 0 1 2 3 4 5 0.0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 800 600 400 Coss 200 Crss 5 10 15 20 25 5.0 2.2 1.9 ID=4.1A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) C, Capacitance (pF) 4.0 Figure 2. Transfer Characteristics 0 VTH, Normalized Gate-Source Threshold Voltage 3.0 Figure 1. Output Characteristics Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 2.0 VGS, Gate-to-Source Voltage (V) 1000 0 1.0 VDS, Drain-to-Source Voltage (V) 1200 1.2 -55 C 0 0 1.3 TJ=125 C VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 4 CEM6659 P-CHANNEL 10 10 -VGS=6V 8 6 -ID, Drain Current (A) -ID, Drain Current (A) -VGS=10,8V -VGS=5V 4 2 8 25 C 6 4 2 -55 C TJ=125 C 0 0 0 1 2 3 4 5 6 0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 600 400 Coss 200 Crss 0 6 12 18 24 30 6 2.2 1.9 ID=-3.1A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 5 Figure 2. Transfer Characteristics Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 4 Figure 1. Output Characteristics 800 1.2 3 -VGS, Gate-to-Source Voltage (V) 1000 1.3 2 -VDS, Drain-to-Source Voltage (V) 1200 0 1 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 5 CEM6659 10 10 V =30V DS ID=4.1A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) N-CHANNEL 6 4 2 0 0 3 6 9 12 RDS(ON)Limit 10 10 10 10 15 2 1 1ms 10ms 100ms 1s 0 -1 -2 TA=25 C TJ=150 C Single Pulse 10 -2 10 0 10 1 Figure 13. Gate Charge Figure 14. Maximum Safe Operating Area 10 -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) -1 VDS, Drain-Source Voltage (V) P-CHANNEL 8 6 4 2 0 0 10 Qg, Total Gate Charge (nC) 10 V =-30V DS ID=-3.1A 3 6 9 10 10 10 10 12 10 2 2 1 RDS(ON)Limit 1ms 10ms 100ms 1s DC 0 -1 -2 TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 15. Gate Charge Figure 16. Maximum Safe Operating Area 6 5 DC 10 2 CEM6659 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 5 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 18. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 17. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 0.02 10 Single Pulse -2 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7 10 1 10 2