LED - Chip ELC-595-29-50 Preliminary 10.04.2007 rev. 02/06 Radiation Type Technology Electrodes Yellow Point Source AlInGaP/GaAs N (cathode) up typ. dimensions (µm) Ø 150 typ. thickness R cathode gold alloy, 1.5 µm 180 310 360 - 10 + 20 30 170 (±20) µm R 5 15 245 anode 180 450 gold alloy, 0.5 µm + 20 -10 PS-03 Maximum Ratings Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 35 mA Typ Max Unit 2.2 2.4 V IF Forward current (DC) Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Forward voltage IF = 5 mA VF Reverse voltage IR = 10 µA VR 5 Radiant power* IF = 5 mA Φe 150 240 µW Luminous intensity* IF = 5 mA IV 30 45 mcd Peak wavelength IF = 5 mA λp 595 nm Spectral bandwidth at 50% IF = 5 mA ∆λ0.5 24 nm Switching time IF = 5 mA tr , t f 40 ns V *Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° IV(typ) [mcd] VF(typ) [V] Quantity ELC-595-29-50 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1