EID1515-10 UPDATED 12/21/2006 15.35-15.75 GHz 10-Watt Internally Matched Power FET Excelics FEATURES • • • • • • .827±.010 .669 15.35– 15.75GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.0 dBm Output Power at 1dB Compression 5.5 dB Power Gain at 1dB Compression 20% Power Added Efficiency Hermetic Metal Flange Package .024 EID1515-10 .421 .120 MIN .120 MIN YYWW SN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Output Power at 1dB Compression f = 15.35-15.75GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 15.35-15.75GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 15.35-15.75GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression f = 15.35-15.75GHz VDS = 10 V, IDSQ ≈ 3200mA Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VP Pinch-off Voltage RTH MIN TYP 39.0 40.0 dBm 4.5 5.5 dB f = 15.35-15.75GHz MAX UNITS ±0.6 dB 22 % 3500 4500 mA VDS = 3 V, VGS = 0 V 5000 7500 mA VDS = 3 V, IDS = 60 mA -1.0 -2.5 2 Thermal Resistance 2.5 3.0 V o C/W Note: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting. MAXIMUM RATING1,2 (Ta = 25°C) SYMBOLS VDS VGS Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15V 10V Gate-Source Voltage -5V -3V Forward Gate Current 120mA 40mA Reverse Gate Current -18mA -6mA Input Power 39.0dBm @ 3dB Compression Channel Temperature o 175 C 175 oC Storage Temperature o -65 to +175 C -65 to +175 oC Total Power Dissipation 50W 50W PARAMETERS Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised December 2006 EID1515-10 UPDATED 12/21/2006 15.35-15.75 GHz 10-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised December 2006