EIC1314-8 13.75-14.5 GHz 8-Watt Internally Matched Power FET ISSUED 2/06/2009 FEATURES • • • • • • 13.75– 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 24% Power Added Efficiency Hermetic Metal Flange Package EIC1314-8 Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE IMD3 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400mA Gain at 1dB Compression f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400mA Gain Flatness f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400mA Power Added Efficiency at 1dB Compression f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400mA Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.0 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 14.50 GHz Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VP Pinch-off Voltage RTH Thermal Resistance3 Note: 1) Tested with 15 Ohm gate resistor. MIN TYP MAX UNITS 38.5 39.0 dBm 5.0 6.0 dB ±0.6 -44 f = 13.75-14.5GHz dB 24 % -47 dBc 2500 2800 mA VDS = 3 V, VGS = 0 V 4000 6000 mA VDS = 3 V, IDS = 40 mA -2.5 -4.0 V 3.5 4.0 2) S.C.L. = Single Carrier Level. o C/W 3) Overall Rth depends on case mounting. 1,2 ABSOLUTE MAXIMUM RATING SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage ABSOLUTE1 CONTINUOUS2 15 10V Gate-Source Voltage -5 -4V Forward Gate Current 86.4mA 28.8mA Reverse Gate Current -14.4mA -4.8mA Input Power 37 dBm @ 3dB Compression Channel Temperature o o 175 C 175 C o Storage Temperature -65 to +175 C -65 to +175 oC Total Power Dissipation 37.5W 37.5W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised February 2009 EIC1314-8 13.75-14.5 GHz 8-Watt Internally Matched Power FET ISSUED 2/06/2009 Output Power V.S Frequency Gain @ 1dB Compression V.S Frequency 10 42 9 8 7 Gain / dB P1dB / dBm 39 36 6 5 4 3 33 2 1 30 13.6 13.8 14 14.2 14.4 0 13.6 14.6 13.8 14 Frequency / GHz 14.2 14.4 14.6 Frequency / GHz P1dB v.s Frequency G1dB v.s Frequency 10 5 S(2,2) S(1,1) dB(S(1,2)) dB(S(2,1)) 0 -5 -10 -15 -20 -25 13.5 13.6 13.7 13.8 13.9 14.0 14.1 14.2 14.3 14.4 14.5 14.6 14.7 freq, GHz freq (13.55GHz to 14.70GHz) S freq 13.55GHz 13.64GHz 13.73GHz 13.82GHz 13.90GHz 13.99GHz 14.08GHz 14.17GHz 14.26GHz 14.35GHz 14.43GHz 14.52GHz 14.61GHz 14.70GHz S(1,1) 0.318 / -99.635 0.280 / -110.611 0.243 / -122.815 0.209 / -135.832 0.175 / -149.745 0.146 / -167.110 0.120 / 172.763 0.102 / 149.063 0.093 / 122.419 0.093 / 94.109 0.099 / 67.353 0.112 / 44.513 0.130 / 24.077 0.149 / 7.110 S(1,2) 0.091 / 83.555 0.093 / 74.732 0.095 / 66.548 0.097 / 58.383 0.099 / 49.523 0.100 / 40.173 0.102 / 32.163 0.103 / 23.382 0.104 / 14.730 0.105 / 6.052 0.105 / -2.801 0.105 / -11.762 0.105 / -21.138 0.105 / -30.090 S(2,1) 2.127 / 105.940 2.158 / 97.551 2.187 / 89.114 2.221 / 80.625 2.245 / 71.874 2.257 / 63.452 2.272 / 54.877 2.285 / 46.163 2.289 / 37.466 2.294 / 28.755 2.295 / 20.041 2.286 / 11.332 2.282 / 2.498 2.270 / -6.260 S(2,2) 0.542 / 67.220 0.522 / 60.828 0.502 / 54.065 0.479 / 47.347 0.454 / 40.295 0.430 / 32.829 0.404 / 25.080 0.377 / 16.820 0.352 / 7.883 0.328 / -1.916 0.305 / -12.402 0.287 / -23.532 0.273 / -35.903 0.260 / -49.190 Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ = 2400mA Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 4 Revised February 2009 EIC1314-8 13.75-14.5 GHz 8-Watt Internally Matched Power FET ISSUED 2/06/2009 Power Dissipation V.S Temperature THIRD-ORDER INTERCEPT POINT IP3 40 IP3 = Pout + IM3/2 30 f1 or f2 Pout [S.C.L.] (dBm) Total Power Dissipation / W 35 25 20 15 Pout IM3 Pin IM3 f1 f2 (2f1-f2) f1 f2 (2f2-f1) 10 (2f2 - f1) or (2f1 - f2) 5 0 0 50 100 150 200 Temperature / °C Pin [S.C.L.] (dBm) IM3 v.s Output Power f1=14.5 GHz, f2=14.49 GHz -20 -30 IM3 / dBc -40 -50 -60 -70 -80 13 16 19 22 25 28 31 Pout (S.C.L) / dBm Typical IMD3 Data (T= 25°C) VDS = 10 V, IDSQ ≈ 2400 mA Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised February 2009 EIC1314-8 ISSUED 2/06/2009 13.75-14.5 GHz 8-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised February 2009