EXCELICS EIC1314-8

EIC1314-8
13.75-14.5 GHz 8-Watt Internally Matched Power FET
ISSUED 2/06/2009
FEATURES
•
•
•
•
•
•
13.75– 14.5GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.0 dBm Output Power at 1dB Compression
6.0 dB Power Gain at 1dB Compression
24% Power Added Efficiency
Hermetic Metal Flange Package
EIC1314-8
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
∆G
PAE
IMD3
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression
f = 13.75-14.5GHz
VDS = 10 V, IDSQ ≈ 2400mA
Gain at 1dB Compression
f = 13.75-14.5GHz
VDS = 10 V, IDSQ ≈ 2400mA
Gain Flatness
f = 13.75-14.5GHz
VDS = 10 V, IDSQ ≈ 2400mA
Power Added Efficiency at 1dB Compression
f = 13.75-14.5GHz
VDS = 10 V, IDSQ ≈ 2400mA
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 28.0 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 14.50 GHz
Id1dB
Drain Current at 1dB Compression
IDSS
Saturated Drain Current
VP
Pinch-off Voltage
RTH
Thermal Resistance3
Note: 1) Tested with 15 Ohm gate resistor.
MIN
TYP
MAX
UNITS
38.5
39.0
dBm
5.0
6.0
dB
±0.6
-44
f = 13.75-14.5GHz
dB
24
%
-47
dBc
2500
2800
mA
VDS = 3 V, VGS = 0 V
4000
6000
mA
VDS = 3 V, IDS = 40 mA
-2.5
-4.0
V
3.5
4.0
2) S.C.L. = Single Carrier Level.
o
C/W
3) Overall Rth depends on case mounting.
1,2
ABSOLUTE MAXIMUM RATING
SYMBOLS
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
ABSOLUTE1
CONTINUOUS2
15
10V
Gate-Source Voltage
-5
-4V
Forward Gate Current
86.4mA
28.8mA
Reverse Gate Current
-14.4mA
-4.8mA
Input Power
37 dBm
@ 3dB Compression
Channel Temperature
o
o
175 C
175 C
o
Storage Temperature
-65 to +175 C
-65 to +175 oC
Total Power Dissipation
37.5W
37.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised February 2009
EIC1314-8
13.75-14.5 GHz 8-Watt Internally Matched Power FET
ISSUED 2/06/2009
Output Power V.S Frequency
Gain @ 1dB Compression V.S Frequency
10
42
9
8
7
Gain / dB
P1dB / dBm
39
36
6
5
4
3
33
2
1
30
13.6
13.8
14
14.2
14.4
0
13.6
14.6
13.8
14
Frequency / GHz
14.2
14.4
14.6
Frequency / GHz
P1dB v.s Frequency
G1dB v.s Frequency
10
5
S(2,2)
S(1,1)
dB(S(1,2))
dB(S(2,1))
0
-5
-10
-15
-20
-25
13.5
13.6
13.7
13.8
13.9
14.0
14.1
14.2
14.3
14.4
14.5
14.6
14.7
freq, GHz
freq (13.55GHz to 14.70GHz)
S
freq
13.55GHz
13.64GHz
13.73GHz
13.82GHz
13.90GHz
13.99GHz
14.08GHz
14.17GHz
14.26GHz
14.35GHz
14.43GHz
14.52GHz
14.61GHz
14.70GHz
S(1,1)
0.318 / -99.635
0.280 / -110.611
0.243 / -122.815
0.209 / -135.832
0.175 / -149.745
0.146 / -167.110
0.120 / 172.763
0.102 / 149.063
0.093 / 122.419
0.093 / 94.109
0.099 / 67.353
0.112 / 44.513
0.130 / 24.077
0.149 / 7.110
S(1,2)
0.091 / 83.555
0.093 / 74.732
0.095 / 66.548
0.097 / 58.383
0.099 / 49.523
0.100 / 40.173
0.102 / 32.163
0.103 / 23.382
0.104 / 14.730
0.105 / 6.052
0.105 / -2.801
0.105 / -11.762
0.105 / -21.138
0.105 / -30.090
S(2,1)
2.127 / 105.940
2.158 / 97.551
2.187 / 89.114
2.221 / 80.625
2.245 / 71.874
2.257 / 63.452
2.272 / 54.877
2.285 / 46.163
2.289 / 37.466
2.294 / 28.755
2.295 / 20.041
2.286 / 11.332
2.282 / 2.498
2.270 / -6.260
S(2,2)
0.542 / 67.220
0.522 / 60.828
0.502 / 54.065
0.479 / 47.347
0.454 / 40.295
0.430 / 32.829
0.404 / 25.080
0.377 / 16.820
0.352 / 7.883
0.328 / -1.916
0.305 / -12.402
0.287 / -23.532
0.273 / -35.903
0.260 / -49.190
Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package)
VDS = 10 V, IDSQ = 2400mA
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised February 2009
EIC1314-8
13.75-14.5 GHz 8-Watt Internally Matched Power FET
ISSUED 2/06/2009
Power Dissipation V.S Temperature
THIRD-ORDER
INTERCEPT POINT IP3
40
IP3 = Pout + IM3/2
30
f1 or f2
Pout [S.C.L.] (dBm)
Total Power Dissipation / W
35
25
20
15
Pout
IM3
Pin
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
10
(2f2 - f1) or (2f1 - f2)
5
0
0
50
100
150
200
Temperature / °C
Pin [S.C.L.] (dBm)
IM3 v.s Output Power
f1=14.5 GHz, f2=14.49 GHz
-20
-30
IM3 / dBc
-40
-50
-60
-70
-80
13
16
19
22
25
28
31
Pout (S.C.L) / dBm
Typical IMD3 Data (T= 25°C)
VDS = 10 V, IDSQ ≈ 2400 mA
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4
Revised February 2009
EIC1314-8
ISSUED 2/06/2009
13.75-14.5 GHz 8-Watt Internally Matched Power FET
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE
TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT
DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS
SEMICONDUCTOR, INC.
AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for
use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 4 of 4
Revised February 2009