EXCELICS EID1314A1-5

EID1314A1-5
UPDATED 07/12/2007
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
FEATURES
•
•
•
•
•
•
•
13.75-14.50 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
35% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
DESCRIPTION
The EID1314A1-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
∆G
PAE
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 13.75-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Gain at 1dB Compression
f = 13.75-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Gain Flatness
f = 13.75-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Power Added Efficiency at 1dB Compression
f = 13.75-14.50GHz
VDS = 10 V, IDSQ = 1200mA
MIN
TYP
MAX
UNITS
37.0
37.5
dBm
6.5
7.5
dB
±0.6
dB
35
%
Id1dB
Drain Current at 1dB Compression f = 13.75-14.50GHz
1400
1800
mA
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
2080
2880
mA
VP
Pinch-off Voltage
VDS = 3 V, IDS = 20 mA
-2.5
-4.0
V
RTH
Thermal Resistance2
5.5
6.0
o
C/W
Notes:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2007
EID1314A1-5
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
UPDATED 07/12/2007
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS
Drain to Source Voltage
10 V
VGS
Gate to Source Voltage
-4.5 V
IDS
Drain Current
IDSS
IGSF
Forward Gate Current
40 mA
PIN
Input Power
PT
Total Power Dissipation
23 W
TCH
Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
@ 3dB compression
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and
PT = (VDS * IDS) – (POUT – PIN).
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package)
VDS = 10 V, IDSQ = 1200mA
S11 and S22
2.
3.
10
0
.4
0.
4
4.
5. 0
- 0.
0
0.2
2
10.0
4.0
5.0
3.0
2.0
1.0
0.8
0.6
0.4
0
0.2
10 .0
0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
10.0
0
-10
DB(|S[2,1]|) *
EID1314-5
-1 0. 0
10.0
5.0
0
4.
.0
.0
0.
-30
.0
13
-2
0
0
-0 .8
1.0
0. 8
--- S11 --MAG
ANG
0.4637
0.4333
0.3930
0.3380
0.2552
0.1524
0.0411
0.1025
0.2214
0.3322
0.4199
4
6
-0
0.
0
S[2,2] *
EID1314-5
-1.0
3.
2.
.6
S[1,1] *
EID1314-5
-3
.4
-4
-0
-51.26
-64.29
-77.23
-90.79
-105.20
-122.48
-169.43
54.46
33.93
20.00
7.64
DB(|S[1,2]|) *
EID1314-5
-20
0.2
-5 .
2
-0.
13.0
13.2
13.4
13.6
13.8
14.0
14.2
14.4
14.6
14.8
15.0
0
S21 and S12 (dB)
6
0
1.0
0.
6
-0
.
.0
.0
.0
-10. 0
FREQ
(GHz)
20
-0
0. 8
-0 .8
-1.0
-2
-3
-4
-5.
S21 and S12
Swp Max
15GHz
Swp Min
13GHz
--- S21 --MAG
ANG
2.2673
2.3733
2.4853
2.5944
2.6962
2.7628
2.7844
2.7359
2.6150
2.4814
2.3055
-134.00
-147.22
-161.29
-176.44
167.96
151.12
133.47
115.60
98.28
81.16
64.97
13.5
14
Frequency (GHz)
14.5
--- S12 --MAG
ANG
-0.0465
-0.0500
-0.0561
0.0603
0.0630
0.0694
0.0703
0.0691
0.0693
0.0659
0.0616
148.59
162.65
176.02
170.24
153.33
136.76
119.55
101.22
84.19
66.29
52.11
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
15
--- S22 --MAG
ANG
0.6281
0.5868
0.5354
0.4755
0.3950
0.3036
0.2036
0.1352
0.1428
0.2059
0.2685
-127.18
-135.36
-144.04
-153.89
-166.55
177.97
152.97
109.08
53.54
19.24
-0.63
page 2 of 4
Revised July 2007
EID1314A1-5
UPDATED 07/12/2007
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
Power De-rating Curve
Total Power Dissipation (W)
Power Dissipation vs. Temperature
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Potentially Unsafe
Operating Region
Safe Operating
Region
0
25
50
75
100
Case Temperature (°C)
125
150
Typical Power Data (VDS = 10 V, IDSQ = 1200 mA)
11
38
10
37
9
36
8
35
7
P-1dB (dBm)
34
13.6
G-1dB (dB)
P-1dB (dBm)
P-1dB & G-1dB vs Frequency
39
13.8
14.0
14.2
G-1dB (dB)
14.4
6
14.6
Frequency (GHz)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4
Revised July 2007
EID1314A1-5
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
UPDATED 07/12/2007
PACKAGE OUTLINE
SOURCE
Dimensions in inches, Tolerance + .005 unless otherwise specified
Excelics
.060 MIN.
.060 MIN.
EID1314A1-5
.650±.008 .512
.319
DRAIN
GATE
.022
YYWW
SN
.045
.094
.382
.004
.129
.070 ±.008
ALL DIMENSIONS IN INCHES
ORDERING INFORMATION
Notes:
Part Number
Grade1
fTest (GHz)
P1dB (min)
EID1314A1-5
Industrial
13.75-14.50 GHz
37.0
1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in “Electrical Characteristics” table.
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR,
INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the
body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 4 of 4
Revised July 2007