EID1415A1-12 UPDATED 07/12/2007 14.40-15.35 GHz 12-Watt Internally-Matched Power FET FEATURES • 14.40-15.35 GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +41.0 dBm Output Power at 1dB Compression • 6.0 dB Power Gain at 1dB Compression • 25% Power Added Efficiency • Hermetic Metal Flange Package • 100% Tested for DC, RF, and RTH DESCRIPTION The EID1415A1-12 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique PHEMT transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE 1 PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 3200mA f = 14.40-15.35GHz Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VP Pinch-off Voltage RTH Thermal Resistance 2 f = 14.40-15.35GHz MIN TYP MAX UNITS 40.0 41.0 dBm 5.0 6.0 dB ±0.6 dB 25 % 3800 4800 mA VDS = 3 V, VGS = 0 V 6000 8000 mA VDS = 3 V, IDS = 60 mA -1.2 -2.5 V 2.2 2.5 o C/W Notes: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised July 2007 EID1415A1-12 14.40-15.35 GHz 12-Watt Internally-Matched Power FET UPDATED 07/12/2007 ABSOLUTE MAXIMUM RATING1,2 ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15V 10V Gate-Source Voltage -5V -4.5V Forward Gate Current 135 45mA Reverse Gate Current -21 -7 Input Power 40dBm @ 3dB Compression Channel Temperature o 175 C 175 oC Storage Temperature o -65 to +175 C -65 to +175 oC Total Power Dissipation 60W 60W SYMBOLS PARAMETERS Vds Vgs Igsf Igsr Pin Tch Tstg Pt Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) – (POUT – PIN). PERFORMANCE DATA Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 3200mA S11 and S22 2. 0 0 3. S21 and S12 (dB) 1.0 0.8 6 0. 0. .4 4 -3 .0 -4 .0 -5. 0 0 4. 5.0 2 -0. 0.2 -10.0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 10.0 4.0 5.0 -10.0 10.0 -0. S21 and S12 20 -0 .0 -2 -0 .6 -0.8 -1.0 Swp Max 16.5GHz 2 0 DB(|S[2,1]|) * EID1415_12 DB(|S[1,2]|) * EID1415_12 -20 0.2 5.0 -4 .0 -5. 0 S[1,1] * 4 EID1415_12 0. -3 .0 0 4. 0 3. 0. -1.0 0.8 1.0 -0.8 6 0. 2. 0 -0 .6 -40 4 14 .0 -2 - S[2,2] * EID1415_12 14.5 15 15.5 16 Frequency (GHz) Swp Min 13.5GHz FREQ (GHz) --- S11 --MAG ANG --- S21 --MAG ANG --- S12 --MAG ANG --- S22 --MAG ANG 13.50 13.75 14.00 14.25 14.50 14.75 15.00 15.25 15.50 15.75 16.00 0.775 0.717 0.635 0.524 0.378 0.229 0.106 0.085 0.151 0.200 0.222 1.415 1.579 1.786 1.985 2.140 2.226 2.248 2.199 2.140 2.054 1.955 0.025 0.028 0.033 0.039 0.044 0.047 0.051 0.050 0.046 0.043 0.039 0.521 0.492 0.453 0.407 0.346 0.273 0.210 0.171 0.183 0.232 0.303 11.290 -5.020 -23.800 -45.990 -72.060 -103.790 -153.980 102.660 47.090 10.580 -23.750 9.610 -10.630 -33.500 -58.350 -85.100 -112.700 -140.510 -167.310 166.000 139.280 112.660 35.410 6.450 -21.300 -52.540 -86.110 -117.710 -146.950 -178.820 150.110 117.830 77.460 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com 102.860 87.150 69.220 49.100 25.420 -3.070 -37.440 -80.600 -129.030 -169.440 160.700 page 2 of 4 Revised July 2007 EID1415A1-12 UPDATED 07/12/2007 14.40-15.35 GHz 12-Watt Internally-Matched Power FET Power De-rating Curve Power Dissipation vs. Temperature 70 Total Power Dissipation (W) 60 Potentially Unsafe Operating Region 50 40 Safe Operating Region 30 20 10 0 0 25 50 75 100 125 Case Temperature (°C) 150 175 Typical Power Data (VDS = 10 V, IDSQ = 3200 mA) P-1dB & G-1dB vs Frequency P-1dB (dBm) 42 10 9 41 8 P-1dB (dBm) G-1dB (dB) 40 7 39 6 38 5 37 14.4 14.6 14.8 15.0 15.2 G-1dB (dB) 43 4 15.4 Frequency (GHz) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised July 2007 EID1415A1-12 14.40-15.35 GHz 12-Watt Internally-Matched Power FET UPDATED 07/12/2007 PACKAGE OUTLINE SOURCE Dimensions in inches, Tolerance + .005 unless otherwise specified Excelics .024 EID1415A1-12 .827±.010 .669 .421 .120 MIN .120 MIN YYWW SN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ALL DIMENSIONS IN INCHES ORDERING INFORMATION Part Number Grade1 fTest (GHz) P1dB (min) EID1415A1-12 Industrial 14.40-15.35 GHz 40.0 Notes: 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in “Electrical Characteristics” table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised July 2007