2SB1 38 6 TRANSISTOR(PNP) FEATURES z Low collector saturation voltage, z Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -5 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -6 V Collector cut-off current ICBO VCB=-20V,IE=0 -0.5 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.5 μA DC current gain hFE VCE=-2V,IC=-500mA Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range Marking VCE(sat) 82 390 IC=-4A,IB=-100mA -1 VCE=-6V,IC=-50mA,f=30MHz 120 MHz VCB=-20V,IE=0,f=1MHz 60 pF hFE P Q R 82-180 120-270 180-390 BHP BHQ BHR １ JinYu semiconductor V www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SB1 38 6 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SB1 38 6 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５