HTSEMI 2SA1873

2SA1873
DUAL TRANSISTOR (PNP+ PNP)
Features
z Small package (dual type)
z High voltage and high current
z High hFE
z Excellent hFE linearity
z Complementary to 2SC4944
SOT-353
1
MARKING: SY SGR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
TJ
Tstg
Value
-50
Units
V
-50
V
-5
V
-150
mA
Collector Power Dissipation
200
mW
Junction Temperature
150
℃
Storage Temperature
-55 to150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
M ax
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-6V,IC=-2mA
Collector-emitter saturation voltage
Collector output capacitance
Rank
Range
Marking
400
IC=-100mA,IB=-10mA
VCE=-10V,IC=-1mA
fT
Transition frequency
CLASSIFICATION OF
VCE(sat)
120
-0.3
80
MHz
VCB=-10V,IE=0,f=1MHz
Cob
V
7
pF
hFE
Y
GR
120-240
200-400
SY
SGR
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05