2SA1873 DUAL TRANSISTOR (PNP+ PNP) Features z Small package (dual type) z High voltage and high current z High hFE z Excellent hFE linearity z Complementary to 2SC4944 SOT-353 1 MARKING: SY SGR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC TJ Tstg Value -50 Units V -50 V -5 V -150 mA Collector Power Dissipation 200 mW Junction Temperature 150 ℃ Storage Temperature -55 to150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ M ax Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC=-2mA Collector-emitter saturation voltage Collector output capacitance Rank Range Marking 400 IC=-100mA,IB=-10mA VCE=-10V,IC=-1mA fT Transition frequency CLASSIFICATION OF VCE(sat) 120 -0.3 80 MHz VCB=-10V,IE=0,f=1MHz Cob V 7 pF hFE Y GR 120-240 200-400 SY SGR 1 JinYu semiconductor www.htsemi.com Date:2011/ 05