HTSEMI BCX54

BCX54 ,BCX55,BCX56
TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z PNP Complements to BCX51,BCX52,BCX53
z Low Voltage
z High Current
1. BASE
2. COLLECTOR
3. EMITTER
APPLICATIONS
z Driver Stages of Audio Amplifiers
MARKING:BCX54:BA, BCX54-10:BC, BCX54-16:BD
BCX55:BE, BCX55-10:BG, BCX55-16BM
BCX56:BH, BCX56-10:BK, BCX56-16:BL
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Value
BCX54
45
BCX55
60
BCX56
100
BCX54
45
BCX55
60
BCX56
80
Emitter-Base Voltage
5
Unit
V
V
V
IC
Collector Current
1
A
PC
Collector Power Dissipation
500
mW
Thermal Resistance From Junction To Ambient
250
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
BCX54 ,BCX55,BCX56
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO
Test
conditions
IC=100µA,IE=0
IC=1mA,IB=0
V(BR)EBO
IE=100µA,IC=0
ICBO
VCB=30V,IE=0
Collector cut-off current
Min
BCX54
45
BCX55
60
BCX56
100
BCX54
45
BCX55
60
BCX56
80
Typ
Max
Unit
V
V
5
V
0.1
µA
0.1
µA
IEBO
VEB=5V,IC=0
hFE(1)
VCE=2V, IC=5mA
40
hFE(2)
VCE=2V, IC=150mA
63
hFE(3)
VCE=2V, IC=0.5A
25
VCE(sat)
IC=0.5A,IB=50mA
0.5
V
Base -emitter voltage
VBE
VCE=2V, IC=0.5A
1
V
Transition frequency
fT
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
VCE=5V,IC=10mA, f=100MHz
250
130
MHz
CLASSIFICATION OF hFE(2)
RANK
RANGE
BCX54
BCX54-10
BCX54-16
BCX55
BCX55-10
BCX55-16
BCX56
BCX56-10
BCX56-16
63–250
63–160
100–250
2 JinYu
semiconductor
www.htsemi.com
Date:2011/05