UML2N Isolated transistor and diodes SOT-353 Features The 2SC2412K and a diodes are housed independently z In a package 1 MARKING：L2 TR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to150 ℃ DIO Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limits Unit DC reverse voltage VR 80 V Peak Reverse Voltage VRM 80 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 100 mA ISURGE 4 A Junction temperature Tj 150 ℃ Storage temperature TSTG -55~+150 ℃ Surge current 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 UML2N TR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0 6 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=1mA Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob 120 560 IC=50mA,IB=5mA 0.4 VCE=12V,IC=2mA,f=100MHz 180 VCB=12V,IE=0,f=1MHz MHz 3.5 DIO Electrical Ratings @Ta=25℃ Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 1.2 V IF=100mA Reverse current IR 0.1 μA VR=70V Capacitance between terminals CT 3.5 pF VR=6V,f=1MHz Reverse Recovery Time trr 4 ns VR=6V, IF=5mA,RL=50Ω 2 JinYu semiconductor V www.htsemi.com Date:2011/ 05 pF