N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFU2N60 █ APPLICATIONSL TO-251 High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature……………………………－55~150℃ 1―G T j ——Operating Junction Temperature …………………………150℃ 2―D PD —— Allowable Power Dissipation（T c=25℃）…………………44W 3―S VDSS —— Drain-Source Voltage ………………………………… 600V VGSS —— Gate-Source Voltage …………………………………±30V ID —— Drain Current（T c=25℃）……………………………………1.8A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVDSS IDSS Characteristics Min Typ Max Unit Test Conditions Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 600 2.5 VGS(th) Gate –Source Leakage Current Gate Threshold Voltage RDS(on) gfs Static Drain-Source On-Resistance Forward Transconductance ３．８ ５．０ ２．０５ Input Capacitance Output Capacitance １８０ ２３５ Ω VGS=10V, ID =1.0A S VDS = 40V , ID =1.0A * pF 20 25 pF VDS =25V, VGS=0,f=1ＭＨｚ 4.3 3 pF Turn - On Delay Time 9 28 nS Rise Time 25 60 nS Turn - Off Delay Time 24 58 nS Fall Time 28 66 nS Qg Total Gate Charge 8.5 12 nC VDD =300V, ID =2A RG= 25 Ω ＊ VDS =480V Qgs Gate–Source Charge 1.3 nC ＶＧＳ＝１０Ｖ Qgd Gate–Drain Charge 4.1 nC ＩＤ＝２Ａ ＊ １．８ Ａ １．４ Ｖ ２．８７ ℃／Ｗ IGSS Ciss Coss Crss td(on) tr td(off) tf Is Reverse Transfer Capacitance Continuous Source Current Diode Forward Voltage Thermal Resistance， Rth（j-c） Junctio n-to-Case *Pulse Test：Pulse Width≤300μs，Duty Cycle≤2% VSD １０ V ID=250μA ,VGS=0V μＡ VDS =600V，VGS=0 ±100 ｎＡ VGS=±30V , VDS =0V 4.5 V VDS = VGS , ID =250μA IS =1.8A , VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFU2N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFU2N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFU2N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFU2N60