Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6296 2N6297 DESCRIPTION ・With TO-66 package ・DARLINGTON ・Complement to type 2N6294/6295 APPLICATIONS ・For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2N6296 VCBO Collector-base voltage -60 Open base 2N6298 VEBO Emitter-base voltage V -80 2N6296 Collector-emitter voltage UNIT -60 Open emitter 2N6297 VCEO VALUE V -80 Open collector -5 V IC Collector current -4 A ICM Collector current-Peak -8 A IB Base current -80 mA PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 3.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6296 2N6297 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6296 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT -60 IC=-50mA ; IB=0 2N6297 V -80 VCEsat-1 Collector-emitter saturation voltage IC=-2A ;IB=-8mA -2.0 V VCEsat-2 Collector-emitter saturation voltage IC=-4A ;IB=-40mA -3.0 V Base-emitter saturation voltage IC=-4A ;IB=-40mA -4.0 V VBE Base -emitter on voltage IC=-2A ; VCE=-3V -2.8 V ICEX Collector cut-off current VCE=RatedVCE;VBE(off)=1.5V TC=150℃ -0.5 -5.0 mA ICEO Collector cut-off current VCE=1/2Rated VCEO; IB=0 -0.5 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA hFE-1 DC current gain IC=-2A ; VCE=-3V 750 hFE-2 DC current gain IC=-4A ; VCE=-3V 100 fT Transition frequency IC=-1.5A ; VCE=-3V;f=1.0MHz 4.0 COB Output capacitance IE=0 ; VCB=-10V;f=0.1MHz VBEsat 2 18000 MHz 200 pF Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6296 2N6297 PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6296 2N6297 4