Inchange Semiconductor Product Specification PMD16K60/80/100 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・DARLINGTON APPLICATIONS ・Designed for use in power switching application. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 体 导 半 PMD16K60 VCBO 固电 VCEO VEBO Collector-base voltage PMD16K100 CHA PMD16K60 PMD16K80 Open emitter Open base PMD16K100 Emitter-base voltage UNIT R O T UC OND C I M E S E NG Collector-emitter voltage IN PMD16K80 VALUE 60 80 V 100 60 80 V 100 Open collector 5 V IC Collector current 20 A ICM Collector current(peak) 40 A IB Base current 0.5 A PD Power dissipation 200 W Tj Max. operating Junction temperature 200 ℃ -65~200 ℃ MAX UNIT 0.875 ℃/W Tstg TC=25℃ Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification PMD16K60/80/100 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS PMD16K60 V(BR)CEO Collector-emitter breakdown voltage PMD16K80 MIN TYP. MAX UNIT 60 IC=0.1A ; IB=0 V 80 100 PMD16K100 VCEsat Collector-emitter saturation voltage IC=10A ;IB=40mA 2.0 V VBEsat Base-emitter saturation voltage IC=10A ;IB=40mA 2.8 V VBE Base-emitter on voltage IC=10A ; VCE=3V 2.8 V hFE DC current gain IC=10A ; VCE=3V ICER Collector cut-off current VCE=Rated VCEO; RBE=Ω TC=150℃ IEBO fT COB 体 导 半 固电 Emitter cut-off current Transition frequency IN IC=7A ; VCE=3V;f=1.0kHz IE=0 ; VCB=10V;f=1.0MHz 2 20000 TOR C U D ON C I M E SE G N A CH Output capacitance VEB=5V; IC=0 1000 1.0 5.0 mA 2.0 mA 4.0 MHz 400 pF Inchange Semiconductor Product Specification PMD16K60/80/100 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC