ISC 2SD1264A

Inchange Semiconductor
Product Specification
2SD1264 2SD1264A
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SB940/940A
·High collector to emitter voltage VCEO
·Large collector power dissipation PC
APPLICATIONS
·For power amplification
·For TV vertical deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
2SD1264
Emitter-base voltage
UNIT
200
V
150
Open base
2SD1264A
VEBO
VALUE
V
180
Open collector
6
V
IC
Collector current
2
A
ICM
Collector current-peak
3
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1264 2SD1264A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SD1264
VCEO
Collector-emitter voltage
MIN
TYP.
MAX
UNIT
150
IC=5mA ,IB=0
2SD1264A
V
180
VCBO
Collector-base voltage
IC=50μA ,IE=0
200
V
VEBO
Emitter-base voltage
IC=500μA ,IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=0.5A, IB=50mA
1.0
V
VBE
Base-emitter voltage
IC=0.4A ; VCE=10V
1.0
V
IEBO
Emitter cut-off current
VEB=4V; IC=0
50
μA
ICBO
Collector cut-off current
VCB=200V; IE=0
50
μA
hFE-1
DC current gain
IC=0.15A ; VCE=10V
60
hFE-2
DC current gain
IC=0.4A ; VCE=10V
50
Transition frequency
IC=0.5A; VCE=10V,f=10MHz
fT
‹
hFE-1 Classifications
Q
P
60-140
100-240
2
240
20
MHz
Inchange Semiconductor
Product Specification
2SD1264 2SD1264A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Inchange Semiconductor
Product Specification
2SD1264 2SD1264A
Silicon NPN Power Transistors
4