Inchange Semiconductor Product Specification 2SC2660 2SC2660A Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1133/1133A ・High VCEO ・Large PC APPLICATIONS ・Power amplifier applications ・TV vertical deflection applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 导 半 固电 Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO EM S E G N A H PARAMETER Collector-base voltage INC R O T UC D N O IC CONDITIONS Open emitter 2SC2660 Collector-emitter voltage Emitter-base voltage UNIT 200 V 150 Open base 2SC2660A VEBO VALUE V 180 Open collector 6 V IC Collector current 2 A ICM Collector current-peak 3 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2660 2SC2660A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage Base-emitter on voltage VBE CONDITIONS MAX UNIT IC=0.5A ;IB=50m A 1.0 V IC=0.4A ; VCE=10V 1.0 V 2SC2660 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. 150 IC=5mA ;IB=0 V 2SC2660A 180 V(BR)CBO Collector-base breakdown voltage IC=0.5mA ;IE=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=0.5mA ;IC=0 6 V ICBO Collector cut-off current VCB=200V;IE=0 IEBO Emitter cut-off current hFE-1 hFE-2 体 导 半 固电 DC current gain DC current gain VEB=4V; IC=0 60-140 D N O IC 60 IC=0.4A ; VCE=10V 50 hFE-1 classifications Q R O T UC IC=0.15A ; VCE=10V EM S E NG A H C IN 50 P 100-240 2 50 240 μA μA Inchange Semiconductor Product Specification 2SC2660 2SC2660A Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 R O T UC