ISC 2SD2561

Inchange Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
2SD2561
DESCRIPTION
·With MT-200 package
·Complement to type 2SB1648
APPLICATIONS
·Audio ,series regulator and general purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
17
A
IB
Base current
1
A
PC
Collector power dissipation
200
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD2561
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA ;IB=0
VCE(sat)
Collector-emitter saturation voltage
IC=10A ;IB=10mA
2.5
V
VBE(sat)
Base-emitter saturation voltage
IC=10A ;IB=10mA
3.0
V
ICBO
Collector cut-off current
VCB=150V ;IE=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE
DC current gain
IC=10A ; VCE=4V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
120
pF
fT
Transition frequency
IE=-2A ; VCE=12V
70
MHz
0.8
μs
4.0
μs
1.2
μs
150
UNIT
V
5000
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A;RL=4Ω
IB1=-IB2=10mA
VCC=40V
hFE Classifications
O
P
Y
5000-12000
6500-20000
15000-30000
2
Inchange Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SD2561